AU2003250299A1 - Production of a rewiring layer on a supporting material - Google Patents
Production of a rewiring layer on a supporting materialInfo
- Publication number
- AU2003250299A1 AU2003250299A1 AU2003250299A AU2003250299A AU2003250299A1 AU 2003250299 A1 AU2003250299 A1 AU 2003250299A1 AU 2003250299 A AU2003250299 A AU 2003250299A AU 2003250299 A AU2003250299 A AU 2003250299A AU 2003250299 A1 AU2003250299 A1 AU 2003250299A1
- Authority
- AU
- Australia
- Prior art keywords
- production
- supporting material
- rewiring layer
- rewiring
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
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- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2924/097—Glass-ceramics, e.g. devitrified glass
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/181—Encapsulation
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10237338.8 | 2002-08-14 | ||
DE10237338A DE10237338A1 (en) | 2002-08-14 | 2002-08-14 | Production of a rewiring layer on a carrier material |
PCT/DE2003/002265 WO2004021431A1 (en) | 2002-08-14 | 2003-07-07 | Production of a rewiring layer on a supporting material |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003250299A1 true AU2003250299A1 (en) | 2004-03-19 |
Family
ID=31501757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003250299A Abandoned AU2003250299A1 (en) | 2002-08-14 | 2003-07-07 | Production of a rewiring layer on a supporting material |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2003250299A1 (en) |
DE (1) | DE10237338A1 (en) |
WO (1) | WO2004021431A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7198965B2 (en) * | 2002-11-06 | 2007-04-03 | Irvine Sensors Corp. | Method for making a neo-layer comprising embedded discrete components |
DE102004015546B4 (en) * | 2004-03-30 | 2011-05-12 | Infineon Technologies Ag | An integrated circuit semiconductor chip and method for securing a semiconductor integrated circuit |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5200362A (en) * | 1989-09-06 | 1993-04-06 | Motorola, Inc. | Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film |
FR2736206B1 (en) * | 1995-06-30 | 1997-08-08 | Commissariat Energie Atomique | METHOD FOR PRODUCING AN INTERCONNECTION SUBSTRATE FOR CONNECTING A CHIP TO A RECEIVING SUBSTRATE |
US5745984A (en) * | 1995-07-10 | 1998-05-05 | Martin Marietta Corporation | Method for making an electronic module |
JP2000124704A (en) * | 1998-10-12 | 2000-04-28 | Matsushita Commun Ind Co Ltd | Millimeter wave module |
JP2001267747A (en) * | 2000-03-22 | 2001-09-28 | Nitto Denko Corp | Manufacturing method for multi-layered circuit board |
JP2002110717A (en) * | 2000-10-02 | 2002-04-12 | Sanyo Electric Co Ltd | Manufacturing method of circuit device |
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2002
- 2002-08-14 DE DE10237338A patent/DE10237338A1/en not_active Withdrawn
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2003
- 2003-07-07 AU AU2003250299A patent/AU2003250299A1/en not_active Abandoned
- 2003-07-07 WO PCT/DE2003/002265 patent/WO2004021431A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2004021431A1 (en) | 2004-03-11 |
DE10237338A1 (en) | 2004-03-11 |
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Legal Events
Date | Code | Title | Description |
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MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |