AU2003248915A1 - Adjustable implantation angle workpiece support structure for an ion beam implanter - Google Patents

Adjustable implantation angle workpiece support structure for an ion beam implanter

Info

Publication number
AU2003248915A1
AU2003248915A1 AU2003248915A AU2003248915A AU2003248915A1 AU 2003248915 A1 AU2003248915 A1 AU 2003248915A1 AU 2003248915 A AU2003248915 A AU 2003248915A AU 2003248915 A AU2003248915 A AU 2003248915A AU 2003248915 A1 AU2003248915 A1 AU 2003248915A1
Authority
AU
Australia
Prior art keywords
support structure
ion beam
workpiece support
implantation angle
beam implanter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003248915A
Other languages
English (en)
Inventor
Joseph Ferrara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of AU2003248915A1 publication Critical patent/AU2003248915A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20207—Tilt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20235—Z movement or adjustment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
AU2003248915A 2002-07-10 2003-07-10 Adjustable implantation angle workpiece support structure for an ion beam implanter Abandoned AU2003248915A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/192,344 US6710360B2 (en) 2002-07-10 2002-07-10 Adjustable implantation angle workpiece support structure for an ion beam implanter
US10/192,344 2002-07-10
PCT/US2003/021527 WO2004006283A1 (en) 2002-07-10 2003-07-10 Adjustable implantation angle workpiece support structure for an ion beam implanter

Publications (1)

Publication Number Publication Date
AU2003248915A1 true AU2003248915A1 (en) 2004-01-23

Family

ID=30114329

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003248915A Abandoned AU2003248915A1 (en) 2002-07-10 2003-07-10 Adjustable implantation angle workpiece support structure for an ion beam implanter

Country Status (7)

Country Link
US (1) US6710360B2 (https=)
EP (1) EP1520287A1 (https=)
JP (1) JP4320471B2 (https=)
CN (1) CN100468605C (https=)
AU (1) AU2003248915A1 (https=)
TW (1) TWI292927B (https=)
WO (1) WO2004006283A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4061044B2 (ja) * 2001-10-05 2008-03-12 住友重機械工業株式会社 基板移動装置
US6774373B2 (en) * 2002-07-29 2004-08-10 Axcelis Technologies, Inc. Adjustable implantation angle workpiece support structure for an ion beam implanter
US6900444B2 (en) * 2002-07-29 2005-05-31 Axcelis Technologies, Inc. Adjustable implantation angle workpiece support structure for an ion beam implanter
US6740894B1 (en) * 2003-02-21 2004-05-25 Axcelis Technologies, Inc. Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor
US20070063147A1 (en) * 2004-06-14 2007-03-22 Semiconductor Energy Laboratory Co., Ltd. Doping device
US7745293B2 (en) * 2004-06-14 2010-06-29 Semiconductor Energy Laboratory Co., Ltd Method for manufacturing a thin film transistor including forming impurity regions by diagonal doping
US6992309B1 (en) 2004-08-13 2006-01-31 Axcelis Technologies, Inc. Ion beam measurement systems and methods for ion implant dose and uniformity control
US6992310B1 (en) 2004-08-13 2006-01-31 Axcelis Technologies, Inc. Scanning systems and methods for providing ions from an ion beam to a workpiece
US7276712B2 (en) * 2005-07-01 2007-10-02 Axcelis Technologies, Inc. Method and apparatus for scanning a workpiece in a vacuum chamber of an ion beam implanter
DE102006027820B4 (de) * 2006-06-16 2008-04-03 All Welding Technologies Ag Kammeranordnung zur Verwendung bei der Elektronenstrahlbearbeitung
US9611540B2 (en) * 2008-12-22 2017-04-04 Axcelis Technologies, Inc. Electrostatic chuck shielding mechanism
CN103928282B (zh) * 2014-05-06 2016-03-16 武汉大学 一种离子注入样品台
CN107078005B (zh) * 2014-09-25 2019-01-04 三菱电机株式会社 离子注入装置
US20160111254A1 (en) * 2014-10-16 2016-04-21 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Method And Apparatus
US10325752B1 (en) * 2018-03-27 2019-06-18 Varian Semiconductor Equipment Associates, Inc. Performance extraction set
CN111398404B (zh) * 2020-05-15 2025-06-03 浙江师范大学 碰撞角度及探测角度均可独立调谐的交叉分子束实验装置
CN118919385B (zh) * 2024-07-16 2025-10-03 颀中科技（苏州）有限公司 载具

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761559A (en) 1986-09-24 1988-08-02 Eaton Corporation Ion beam implantation display method and apparatus
US4975586A (en) * 1989-02-28 1990-12-04 Eaton Corporation Ion implanter end station
US5229615A (en) 1992-03-05 1993-07-20 Eaton Corporation End station for a parallel beam ion implanter
US5444597A (en) 1993-01-15 1995-08-22 Blake; Julian G. Wafer release method and apparatus
US5436790A (en) 1993-01-15 1995-07-25 Eaton Corporation Wafer sensing and clamping monitor
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
US6222196B1 (en) * 1998-11-19 2001-04-24 Axcelis Technologies, Inc. Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter
US6065499A (en) * 1998-12-21 2000-05-23 Eaton Corporation Lateral stress relief mechanism for vacuum bellows
GB2349269A (en) * 1999-04-19 2000-10-25 Applied Materials Inc Ion implanter
US6207959B1 (en) 1999-04-19 2001-03-27 Applied Materials, Inc. Ion implanter
KR100298587B1 (ko) * 1999-11-22 2001-11-05 윤종용 이온 주입 장치
US6677599B2 (en) * 2000-03-27 2004-01-13 Applied Materials, Inc. System and method for uniformly implanting a wafer with an ion beam
US20030122088A1 (en) * 2001-11-14 2003-07-03 Varian Semiconductor Equipment Associates, Inc. Scan methods and apparatus for ion implantation

Also Published As

Publication number Publication date
US20040007678A1 (en) 2004-01-15
JP4320471B2 (ja) 2009-08-26
CN1669107A (zh) 2005-09-14
US6710360B2 (en) 2004-03-23
WO2004006283A1 (en) 2004-01-15
TWI292927B (en) 2008-01-21
CN100468605C (zh) 2009-03-11
TW200405442A (en) 2004-04-01
JP2005533340A (ja) 2005-11-04
EP1520287A1 (en) 2005-04-06

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase