AU2003215496A8 - Method for the production of a bragg lattice in a semiconductor layer sequence by etching and semiconductor element - Google Patents

Method for the production of a bragg lattice in a semiconductor layer sequence by etching and semiconductor element

Info

Publication number
AU2003215496A8
AU2003215496A8 AU2003215496A AU2003215496A AU2003215496A8 AU 2003215496 A8 AU2003215496 A8 AU 2003215496A8 AU 2003215496 A AU2003215496 A AU 2003215496A AU 2003215496 A AU2003215496 A AU 2003215496A AU 2003215496 A8 AU2003215496 A8 AU 2003215496A8
Authority
AU
Australia
Prior art keywords
production
bragg
etching
bragg lattice
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003215496A
Other versions
AU2003215496A1 (en
Inventor
Hans Wenzel
Gotz Erbert
Matthias Braun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungsverbund Berlin FVB eV
Original Assignee
Forschungsverbund Berlin FVB eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungsverbund Berlin FVB eV filed Critical Forschungsverbund Berlin FVB eV
Publication of AU2003215496A8 publication Critical patent/AU2003215496A8/en
Publication of AU2003215496A1 publication Critical patent/AU2003215496A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/0675—Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to a method for the production of a Bragg lattice in a semiconductor layer sequence having corresponding layer thicknesses and refraction indices by means of etching. The aim of the invention is to develop a method and a component enabling the production of Bragg lattices with pulse duty factors which are significantly different from ½ by means of holographic exposure, whereby the pulse duty factor of the Bragg lattice can be precisely adjusted and controlled without structuring the masking layer for the same duty factor and without using or modifying electron beam exposure. This is achieved by selecting the layer thicknesses and refraction indices of a semiconductor sequence into which the Bragg lattice is etched in such a way that a defined pulse duty factor and a defined difference in the effective index of refraction can be obtained.
AU2003215496A 2002-01-08 2003-01-08 Method for the production of a bragg lattice in a semiconductor layer sequence by etching and semiconductor element Abandoned AU2003215496A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10200360.2 2002-01-08
DE10200360A DE10200360B4 (en) 2002-01-08 2002-01-08 Method for producing a Bragg grating in a semiconductor layer sequence by means of etching and semiconductor component
PCT/DE2003/000072 WO2003058685A2 (en) 2002-01-08 2003-01-08 Method for the production of a bragg lattice in a semiconductor layer sequence by etching and semiconductor element

Publications (2)

Publication Number Publication Date
AU2003215496A8 true AU2003215496A8 (en) 2003-07-24
AU2003215496A1 AU2003215496A1 (en) 2003-07-24

Family

ID=7711631

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003215496A Abandoned AU2003215496A1 (en) 2002-01-08 2003-01-08 Method for the production of a bragg lattice in a semiconductor layer sequence by etching and semiconductor element

Country Status (5)

Country Link
EP (1) EP1464098B1 (en)
AT (1) ATE338363T1 (en)
AU (1) AU2003215496A1 (en)
DE (2) DE10200360B4 (en)
WO (1) WO2003058685A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111709A (en) 2002-09-19 2004-04-08 Mitsubishi Electric Corp Semiconductor laser
CN111490450A (en) * 2020-04-24 2020-08-04 江苏华兴激光科技有限公司 808nm laser epitaxial wafer and preparation method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023198A (en) * 1990-02-28 1991-06-11 At&T Bell Laboratories Method for fabricating self-stabilized semiconductor gratings
WO1992007401A1 (en) * 1990-10-19 1992-04-30 Optical Measurement Technology Development Co., Ltd. Distributed feedback semiconductor laser
DE4322164A1 (en) * 1993-07-03 1995-01-12 Ant Nachrichtentech Optoelectronic component with feedback grating, with axially quasi-continuous and almost arbitrarily variable grating coupling coefficients, with quasi-continuously axially distributable refractive index variation, and with axially almost arbitrarily distributable and variable phase shift
EP1265326B1 (en) * 2000-03-13 2009-05-13 Sharp Kabushiki Kaisha Gain-coupled distributed feedback semiconductor laser device and production method therefor

Also Published As

Publication number Publication date
EP1464098A2 (en) 2004-10-06
DE10200360B4 (en) 2004-01-08
AU2003215496A1 (en) 2003-07-24
WO2003058685A3 (en) 2003-11-27
ATE338363T1 (en) 2006-09-15
DE50304846D1 (en) 2006-10-12
DE10200360A1 (en) 2003-07-31
EP1464098B1 (en) 2006-08-30
WO2003058685A2 (en) 2003-07-17

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase