AU2003205661A1 - Method and device for detecting a breakdown of a bipolar transistor - Google Patents

Method and device for detecting a breakdown of a bipolar transistor

Info

Publication number
AU2003205661A1
AU2003205661A1 AU2003205661A AU2003205661A AU2003205661A1 AU 2003205661 A1 AU2003205661 A1 AU 2003205661A1 AU 2003205661 A AU2003205661 A AU 2003205661A AU 2003205661 A AU2003205661 A AU 2003205661A AU 2003205661 A1 AU2003205661 A1 AU 2003205661A1
Authority
AU
Australia
Prior art keywords
breakdown
detecting
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003205661A
Inventor
Stephan Weber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of AU2003205661A1 publication Critical patent/AU2003205661A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2608Circuits therefor for testing bipolar transistors
    • G01R31/261Circuits therefor for testing bipolar transistors for measuring break-down voltage or punch through voltage therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Bipolar Integrated Circuits (AREA)
AU2003205661A 2002-02-12 2003-01-23 Method and device for detecting a breakdown of a bipolar transistor Abandoned AU2003205661A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10205711.7 2002-02-12
DE2002105711 DE10205711A1 (en) 2002-02-12 2002-02-12 Method and device for detecting a breakdown of a bipolar transistor
PCT/EP2003/000672 WO2003069362A1 (en) 2002-02-12 2003-01-23 Method and device for detecting a breakdown of a bipolar transistor

Publications (1)

Publication Number Publication Date
AU2003205661A1 true AU2003205661A1 (en) 2003-09-04

Family

ID=27618553

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003205661A Abandoned AU2003205661A1 (en) 2002-02-12 2003-01-23 Method and device for detecting a breakdown of a bipolar transistor

Country Status (3)

Country Link
AU (1) AU2003205661A1 (en)
DE (1) DE10205711A1 (en)
WO (1) WO2003069362A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110244210B (en) * 2019-07-04 2021-10-15 福州丹诺西诚电子科技有限公司 Breakdown detection method for IGBT unit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0176771A3 (en) * 1984-09-28 1988-01-13 Siemens Aktiengesellschaft Bipolar power transistor with a variable breakdown voltage
JPH07146722A (en) * 1993-10-01 1995-06-06 Fuji Electric Co Ltd Overcurrent protective device for transistor
JP3400215B2 (en) * 1995-11-21 2003-04-28 沖電気工業株式会社 Semiconductor device
JP3239849B2 (en) * 1998-07-16 2001-12-17 日本電気株式会社 Measuring method of collector-emitter breakdown voltage of bipolar transistor

Also Published As

Publication number Publication date
WO2003069362A1 (en) 2003-08-21
DE10205711A1 (en) 2003-08-21

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase