AU2003201736A1 - Materials and methods for forming hybrid organic-inorganic dielectric materials - Google Patents

Materials and methods for forming hybrid organic-inorganic dielectric materials

Info

Publication number
AU2003201736A1
AU2003201736A1 AU2003201736A AU2003201736A AU2003201736A1 AU 2003201736 A1 AU2003201736 A1 AU 2003201736A1 AU 2003201736 A AU2003201736 A AU 2003201736A AU 2003201736 A AU2003201736 A AU 2003201736A AU 2003201736 A1 AU2003201736 A1 AU 2003201736A1
Authority
AU
Australia
Prior art keywords
materials
methods
inorganic dielectric
hybrid organic
forming hybrid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003201736A
Other versions
AU2003201736A8 (en
Inventor
Arto L. T. Maaninen
Tiina J. Maaninen
Jarkko J. Pietikainen
Juha T. Rantala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silecs Oy
Original Assignee
Silecs Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/041,121 external-priority patent/US20030176718A1/en
Priority claimed from US10/041,122 external-priority patent/US6924384B2/en
Priority claimed from US10/041,343 external-priority patent/US6831189B2/en
Priority claimed from US10/041,272 external-priority patent/US20030171607A1/en
Priority claimed from US10/041,302 external-priority patent/US6803476B2/en
Application filed by Silecs Oy filed Critical Silecs Oy
Publication of AU2003201736A1 publication Critical patent/AU2003201736A1/en
Publication of AU2003201736A8 publication Critical patent/AU2003201736A8/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0834—Compounds having one or more O-Si linkage
    • C07F7/0838—Compounds with one or more Si-O-Si sequences
    • C07F7/0872—Preparation and treatment thereof
    • C07F7/0874—Reactions involving a bond of the Si-O-Si linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C07F7/121—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20
    • C07F7/123—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20 by reactions involving the formation of Si-halogen linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C07F7/1872—Preparation; Treatments not provided for in C07F7/20
    • C07F7/1888—Preparation; Treatments not provided for in C07F7/20 by reactions involving the formation of other Si-linkages, e.g. Si-N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
AU2003201736A 2002-01-08 2003-01-08 Materials and methods for forming hybrid organic-inorganic dielectric materials Abandoned AU2003201736A1 (en)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
US10/041,272 2002-01-08
US10/041,343 2002-01-08
US10/041,302 2002-01-08
US10/041,121 US20030176718A1 (en) 2002-01-08 2002-01-08 Methods and compounds for making coatings, waveguides and other optical devices
US10/041,122 US6924384B2 (en) 2002-01-08 2002-01-08 Methods and compounds for making coatings, waveguides and other optical devices
US10/041,122 2002-01-08
US10/041,343 US6831189B2 (en) 2002-01-08 2002-01-08 Methods and compounds for making coatings, waveguides and other optical devices
US10/041,272 US20030171607A1 (en) 2002-01-08 2002-01-08 Methods and compounds for making coatings, waveguides and other optical devices
US10/041,121 2002-01-08
US10/041,302 US6803476B2 (en) 2002-01-08 2002-01-08 Methods and compounds for making coatings, waveguides and other optical devices
US34995502P 2002-01-17 2002-01-17
US60/349,955 2002-01-17
US39541802P 2002-07-13 2002-07-13
US60/395,418 2002-07-13
PCT/IB2003/000337 WO2003057702A2 (en) 2002-01-08 2003-01-08 Materials and methods for forming hybrid organic-inorganic dielectric materials

Publications (2)

Publication Number Publication Date
AU2003201736A1 true AU2003201736A1 (en) 2003-07-24
AU2003201736A8 AU2003201736A8 (en) 2003-07-24

Family

ID=27567928

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2003201488A Abandoned AU2003201488A1 (en) 2002-01-08 2003-01-08 Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
AU2003201736A Abandoned AU2003201736A1 (en) 2002-01-08 2003-01-08 Materials and methods for forming hybrid organic-inorganic dielectric materials

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AU2003201488A Abandoned AU2003201488A1 (en) 2002-01-08 2003-01-08 Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications

Country Status (3)

Country Link
EP (1) EP1463740A2 (en)
AU (2) AU2003201488A1 (en)
WO (2) WO2003057702A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7214475B2 (en) 2004-03-29 2007-05-08 Christoph Georg Erben Compound for optical materials and methods of fabrication
CN111566115B (en) * 2017-12-28 2021-06-22 3M创新有限公司 Functional fluorinated silane compounds

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3853726A (en) 1970-07-04 1974-12-10 B Vainshiein Method of producing organochlorosilanes
DE19613650C1 (en) * 1996-04-04 1997-04-10 Fraunhofer Ges Forschung Stable hydrolysable per:fluoro-silane cpds.
US6020458A (en) 1997-10-24 2000-02-01 Quester Technology, Inc. Precursors for making low dielectric constant materials with improved thermal stability
JPH11319708A (en) * 1998-05-19 1999-11-24 Matsushita Electric Ind Co Ltd Production of chemical adsorption membrane

Also Published As

Publication number Publication date
WO2003057702A3 (en) 2003-11-13
AU2003201488A1 (en) 2003-07-24
WO2003057703A1 (en) 2003-07-17
WO2003057702A2 (en) 2003-07-17
EP1463740A2 (en) 2004-10-06
AU2003201736A8 (en) 2003-07-24

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase