AU2002334597B2 - Apparatus for the synthesis of layers, coatings or films - Google Patents
Apparatus for the synthesis of layers, coatings or films Download PDFInfo
- Publication number
- AU2002334597B2 AU2002334597B2 AU2002334597A AU2002334597A AU2002334597B2 AU 2002334597 B2 AU2002334597 B2 AU 2002334597B2 AU 2002334597 A AU2002334597 A AU 2002334597A AU 2002334597 A AU2002334597 A AU 2002334597A AU 2002334597 B2 AU2002334597 B2 AU 2002334597B2
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- reusable tool
- precursor
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Links
- 230000015572 biosynthetic process Effects 0.000 title description 28
- 238000000576 coating method Methods 0.000 title description 23
- 238000003786 synthesis reaction Methods 0.000 title description 17
- 239000002243 precursor Substances 0.000 claims description 136
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 230000005686 electrostatic field Effects 0.000 claims description 24
- 229910004261 CaF 2 Inorganic materials 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 239000010410 layer Substances 0.000 description 397
- 239000000758 substrate Substances 0.000 description 101
- 238000000034 method Methods 0.000 description 65
- 239000000203 mixture Substances 0.000 description 65
- 239000011734 sodium Substances 0.000 description 60
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 59
- 229910052708 sodium Inorganic materials 0.000 description 59
- 239000010949 copper Substances 0.000 description 51
- 239000000463 material Substances 0.000 description 49
- 229910052802 copper Inorganic materials 0.000 description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 40
- 239000010408 film Substances 0.000 description 39
- 230000008569 process Effects 0.000 description 32
- 239000004094 surface-active agent Substances 0.000 description 32
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052733 gallium Inorganic materials 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 150000003346 selenoethers Chemical class 0.000 description 24
- 239000006096 absorbing agent Substances 0.000 description 22
- 239000011669 selenium Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 20
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 19
- 229910001634 calcium fluoride Inorganic materials 0.000 description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- 230000003993 interaction Effects 0.000 description 18
- 229910052711 selenium Inorganic materials 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 15
- 238000000151 deposition Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 15
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 238000013459 approach Methods 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- 230000007547 defect Effects 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 12
- 238000005755 formation reaction Methods 0.000 description 12
- 230000006870 function Effects 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 11
- 239000007795 chemical reaction product Substances 0.000 description 11
- 239000012071 phase Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- 230000032258 transport Effects 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000008901 benefit Effects 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 239000000956 alloy Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 239000000376 reactant Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 239000000872 buffer Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000011575 calcium Substances 0.000 description 7
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000002244 precipitate Substances 0.000 description 7
- 229910052712 strontium Inorganic materials 0.000 description 7
- 229910052717 sulfur Inorganic materials 0.000 description 7
- 239000011593 sulfur Substances 0.000 description 7
- 238000007792 addition Methods 0.000 description 6
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920006395 saturated elastomer Polymers 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000008707 rearrangement Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000006467 substitution reaction Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 238000010348 incorporation Methods 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 3
- 229910001637 strontium fluoride Inorganic materials 0.000 description 3
- 239000002887 superconductor Substances 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000750 constant-initial-state spectroscopy Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- NMHFBDQVKIZULJ-UHFFFAOYSA-N selanylideneindium Chemical compound [In]=[Se] NMHFBDQVKIZULJ-UHFFFAOYSA-N 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 102000020856 Copper Transport Proteins Human genes 0.000 description 1
- 108091004554 Copper Transport Proteins Proteins 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 239000006173 Good's buffer Substances 0.000 description 1
- BKQMNPVDJIHLPD-UHFFFAOYSA-N OS(=O)(=O)[Se]S(O)(=O)=O Chemical compound OS(=O)(=O)[Se]S(O)(=O)=O BKQMNPVDJIHLPD-UHFFFAOYSA-N 0.000 description 1
- 229910001278 Sr alloy Inorganic materials 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- MQNRINNMYJOTSP-UHFFFAOYSA-N [O-2].[Zn+2].[S-2].[Cd+2] Chemical compound [O-2].[Zn+2].[S-2].[Cd+2] MQNRINNMYJOTSP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 238000005290 field theory Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical class [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 229940075065 polyvinyl acetate Drugs 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VPQBLCVGUWPDHV-UHFFFAOYSA-N sodium selenide Chemical class [Na+].[Na+].[Se-2] VPQBLCVGUWPDHV-UHFFFAOYSA-N 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
- H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Coating Apparatus (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/957,132 | 2001-09-20 | ||
| US09/957,121 US6559372B2 (en) | 2001-09-20 | 2001-09-20 | Photovoltaic devices and compositions for use therein |
| US09/957,125 US6787012B2 (en) | 2001-09-20 | 2001-09-20 | Apparatus for the synthesis of layers, coatings or films |
| US09/957,125 | 2001-09-20 | ||
| US09/957,123 US6881647B2 (en) | 2001-09-20 | 2001-09-20 | Synthesis of layers, coatings or films using templates |
| US09/957,132 US6500733B1 (en) | 2001-09-20 | 2001-09-20 | Synthesis of layers, coatings or films using precursor layer exerted pressure containment |
| US09/957,050 | 2001-09-20 | ||
| US09/957,207 US6593213B2 (en) | 2001-09-20 | 2001-09-20 | Synthesis of layers, coatings or films using electrostatic fields |
| US09/957,123 | 2001-09-20 | ||
| US09/957,121 | 2001-09-20 | ||
| US09/957,207 | 2001-09-20 | ||
| US09/957,050 US6736986B2 (en) | 2001-09-20 | 2001-09-20 | Chemical synthesis of layers, coatings or films using surfactants |
| PCT/US2002/029684 WO2003026028A2 (en) | 2001-09-20 | 2002-09-18 | Apparatus for the synthesis of layers, coatings or films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU2002334597A1 AU2002334597A1 (en) | 2003-06-05 |
| AU2002334597B2 true AU2002334597B2 (en) | 2005-12-22 |
Family
ID=27560353
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2002334597A Ceased AU2002334597B2 (en) | 2001-09-20 | 2002-09-18 | Apparatus for the synthesis of layers, coatings or films |
| AU2002326953A Abandoned AU2002326953A1 (en) | 2001-09-20 | 2002-09-19 | Synthesis of layers, coatings or films using pressure containment exerted on precursor layers |
| AU2002325038A Ceased AU2002325038B2 (en) | 2001-09-20 | 2002-09-19 | Photovoltaic devices and compositions for use therein |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2002326953A Abandoned AU2002326953A1 (en) | 2001-09-20 | 2002-09-19 | Synthesis of layers, coatings or films using pressure containment exerted on precursor layers |
| AU2002325038A Ceased AU2002325038B2 (en) | 2001-09-20 | 2002-09-19 | Photovoltaic devices and compositions for use therein |
Country Status (4)
| Country | Link |
|---|---|
| EP (3) | EP1476906A2 (de) |
| AU (3) | AU2002334597B2 (de) |
| WO (6) | WO2003026028A2 (de) |
| ZA (2) | ZA200404979B (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7459187B2 (en) | 2003-10-29 | 2008-12-02 | Kabushiki Kaisha Kobe Seiko Sho | Surface-treatment method and equipment |
| US7767904B2 (en) | 2006-01-12 | 2010-08-03 | Heliovolt Corporation | Compositions including controlled segregated phase domain structures |
| US20070160763A1 (en) * | 2006-01-12 | 2007-07-12 | Stanbery Billy J | Methods of making controlled segregated phase domain structures |
| CA2637111C (en) * | 2006-01-12 | 2013-02-26 | Heliovolt Corporation | Compositions including controlled segregated phase domain structures |
| US8034317B2 (en) | 2007-06-18 | 2011-10-11 | Heliovolt Corporation | Assemblies of anisotropic nanoparticles |
| DE102008014824B4 (de) | 2008-03-18 | 2014-07-10 | Leonhard Kurz Stiftung & Co. Kg | Dotierfolien und deren Verwendung |
| WO2011146115A1 (en) | 2010-05-21 | 2011-11-24 | Heliovolt Corporation | Liquid precursor for deposition of copper selenide and method of preparing the same |
| US9142408B2 (en) | 2010-08-16 | 2015-09-22 | Alliance For Sustainable Energy, Llc | Liquid precursor for deposition of indium selenide and method of preparing the same |
| US9105797B2 (en) | 2012-05-31 | 2015-08-11 | Alliance For Sustainable Energy, Llc | Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0381509A1 (de) * | 1989-02-02 | 1990-08-08 | Alcan International Limited | Verfahren zum Erzeugen von abgelösten mittels Dampf aufgebrachten Filmen |
| EP0989593A2 (de) * | 1998-09-25 | 2000-03-29 | Canon Kabushiki Kaisha | Verfahren und Vorrichtung zur Zerteilung von Substrat und Substratherstellungverfahren |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5248621A (en) * | 1990-10-23 | 1993-09-28 | Canon Kabushiki Kaisha | Method for producing solar cell devices of crystalline material |
| DE4225385C2 (de) * | 1992-07-31 | 1994-09-29 | Siemens Solar Gmbh | Verfahren zur kostengünstigen Herstellung einer Schicht eines ternären Verbindungshalbleiters |
| US5536354A (en) * | 1993-04-23 | 1996-07-16 | Canon Kabushiki Kaisha | Solid phase bonding method |
| US5477088A (en) * | 1993-05-12 | 1995-12-19 | Rockett; Angus A. | Multi-phase back contacts for CIS solar cells |
| JP3571785B2 (ja) * | 1993-12-28 | 2004-09-29 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
| DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
| JP3244408B2 (ja) * | 1995-09-13 | 2002-01-07 | 松下電器産業株式会社 | 薄膜太陽電池及びその製造方法 |
| US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
| US6251754B1 (en) * | 1997-05-09 | 2001-06-26 | Denso Corporation | Semiconductor substrate manufacturing method |
| US6316332B1 (en) * | 1998-11-30 | 2001-11-13 | Lo Yu-Hwa | Method for joining wafers at a low temperature and low stress |
| US6190453B1 (en) * | 1999-07-14 | 2001-02-20 | Seh America, Inc. | Growth of epitaxial semiconductor material with improved crystallographic properties |
-
2002
- 2002-09-18 EP EP02799001A patent/EP1476906A2/de not_active Withdrawn
- 2002-09-18 WO PCT/US2002/029684 patent/WO2003026028A2/en not_active Ceased
- 2002-09-18 WO PCT/US2002/029529 patent/WO2003026022A2/en not_active Ceased
- 2002-09-18 WO PCT/US2002/029701 patent/WO2003026026A2/en not_active Ceased
- 2002-09-18 AU AU2002334597A patent/AU2002334597B2/en not_active Ceased
- 2002-09-19 WO PCT/US2002/029608 patent/WO2003026025A2/en not_active Ceased
- 2002-09-19 AU AU2002326953A patent/AU2002326953A1/en not_active Abandoned
- 2002-09-19 EP EP20020759721 patent/EP1470593A2/de not_active Withdrawn
- 2002-09-19 WO PCT/US2002/029605 patent/WO2003026023A2/en not_active Ceased
- 2002-09-19 EP EP20020761712 patent/EP1470594A2/de not_active Withdrawn
- 2002-09-19 WO PCT/US2002/029607 patent/WO2003026024A2/en not_active Ceased
- 2002-09-19 AU AU2002325038A patent/AU2002325038B2/en not_active Ceased
-
2004
- 2004-06-23 ZA ZA2004/04979A patent/ZA200404979B/en unknown
- 2004-06-23 ZA ZA2004/04981A patent/ZA200404981B/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0381509A1 (de) * | 1989-02-02 | 1990-08-08 | Alcan International Limited | Verfahren zum Erzeugen von abgelösten mittels Dampf aufgebrachten Filmen |
| EP0989593A2 (de) * | 1998-09-25 | 2000-03-29 | Canon Kabushiki Kaisha | Verfahren und Vorrichtung zur Zerteilung von Substrat und Substratherstellungverfahren |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003026022A3 (en) | 2003-11-20 |
| EP1470594A2 (de) | 2004-10-27 |
| WO2003026026A2 (en) | 2003-03-27 |
| EP1476906A2 (de) | 2004-11-17 |
| WO2003026022A2 (en) | 2003-03-27 |
| WO2003026028A3 (en) | 2003-12-18 |
| AU2002326953A1 (en) | 2003-04-01 |
| AU2002325038B2 (en) | 2006-03-09 |
| WO2003026024A3 (en) | 2003-12-31 |
| WO2003026028A2 (en) | 2003-03-27 |
| ZA200404979B (en) | 2005-07-27 |
| WO2003026026A3 (en) | 2003-12-18 |
| EP1470593A2 (de) | 2004-10-27 |
| WO2003026025A2 (en) | 2003-03-27 |
| WO2003026023A2 (en) | 2003-03-27 |
| WO2003026025A3 (en) | 2003-12-18 |
| ZA200404981B (en) | 2005-09-28 |
| WO2003026023A3 (en) | 2004-04-15 |
| WO2003026024A2 (en) | 2003-03-27 |
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| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase | ||
| NB | Applications allowed - extensions of time section 223(2) |
Free format text: THE TIME IN WHICH TO ENTER THE NATIONAL PHASE HAS BEEN EXTENDED TO 20 JUN 2004. |
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| FGA | Letters patent sealed or granted (standard patent) | ||
| MK14 | Patent ceased section 143(a) (annual fees not paid) or expired |