AU2002254222A1 - Single level metal memory cell using chalcogenide cladding - Google Patents
Single level metal memory cell using chalcogenide claddingInfo
- Publication number
- AU2002254222A1 AU2002254222A1 AU2002254222A AU2002254222A AU2002254222A1 AU 2002254222 A1 AU2002254222 A1 AU 2002254222A1 AU 2002254222 A AU2002254222 A AU 2002254222A AU 2002254222 A AU2002254222 A AU 2002254222A AU 2002254222 A1 AU2002254222 A1 AU 2002254222A1
- Authority
- AU
- Australia
- Prior art keywords
- memory cell
- single level
- level metal
- metal memory
- chalcogenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 150000004770 chalcogenides Chemical class 0.000 title 1
- 238000005253 cladding Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2002/007813 WO2003073512A1 (en) | 2002-02-22 | 2002-02-22 | Single level metal memory cell using chalcogenide cladding |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002254222A1 true AU2002254222A1 (en) | 2003-09-09 |
Family
ID=27765166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002254222A Abandoned AU2002254222A1 (en) | 2002-02-22 | 2002-02-22 | Single level metal memory cell using chalcogenide cladding |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2006508522A (en) |
KR (1) | KR100603558B1 (en) |
AU (1) | AU2002254222A1 (en) |
WO (1) | WO2003073512A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100504700B1 (en) | 2003-06-04 | 2005-08-03 | 삼성전자주식회사 | Phase random access memory with high dencity |
JP2005093619A (en) * | 2003-09-16 | 2005-04-07 | Sumio Hosaka | Recording element |
US7687830B2 (en) * | 2004-09-17 | 2010-03-30 | Ovonyx, Inc. | Phase change memory with ovonic threshold switch |
TW200629270A (en) | 2004-12-13 | 2006-08-16 | Koninkl Philips Electronics Nv | Programmable phase-change memory and method therefor |
US7408240B2 (en) * | 2005-05-02 | 2008-08-05 | Infineon Technologies Ag | Memory device |
KR100665227B1 (en) | 2005-10-18 | 2007-01-09 | 삼성전자주식회사 | Phase change memory device and fabricating method for the same |
KR100791008B1 (en) * | 2006-12-26 | 2008-01-04 | 삼성전자주식회사 | Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory |
KR100971423B1 (en) * | 2008-04-04 | 2010-07-21 | 주식회사 하이닉스반도체 | Phase change memory device and method for manufacturing the same |
JP5696378B2 (en) * | 2010-06-15 | 2015-04-08 | ソニー株式会社 | Manufacturing method of storage device |
US9741930B2 (en) * | 2015-03-27 | 2017-08-22 | Intel Corporation | Materials and components in phase change memory devices |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4677742A (en) * | 1983-01-18 | 1987-07-07 | Energy Conversion Devices, Inc. | Electronic matrix arrays and method for making the same |
US5869843A (en) * | 1995-06-07 | 1999-02-09 | Micron Technology, Inc. | Memory array having a multi-state element and method for forming such array or cells thereof |
US6339544B1 (en) * | 2000-09-29 | 2002-01-15 | Intel Corporation | Method to enhance performance of thermal resistor device |
-
2002
- 2002-02-22 JP JP2003572095A patent/JP2006508522A/en active Pending
- 2002-02-22 AU AU2002254222A patent/AU2002254222A1/en not_active Abandoned
- 2002-02-22 WO PCT/US2002/007813 patent/WO2003073512A1/en active Application Filing
- 2002-02-22 KR KR1020047012908A patent/KR100603558B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2006508522A (en) | 2006-03-09 |
KR20040083538A (en) | 2004-10-02 |
WO2003073512A1 (en) | 2003-09-04 |
KR100603558B1 (en) | 2006-07-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |