AU2002253834A1 - Improved light extraction efficiency of gan based leds - Google Patents

Improved light extraction efficiency of gan based leds

Info

Publication number
AU2002253834A1
AU2002253834A1 AU2002253834A AU2002253834A AU2002253834A1 AU 2002253834 A1 AU2002253834 A1 AU 2002253834A1 AU 2002253834 A AU2002253834 A AU 2002253834A AU 2002253834 A AU2002253834 A AU 2002253834A AU 2002253834 A1 AU2002253834 A1 AU 2002253834A1
Authority
AU
Australia
Prior art keywords
light extraction
extraction efficiency
improved light
gan based
based leds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002253834A
Other languages
English (en)
Inventor
Ivan Eliashevich
Michael Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Emcore Corp
Original Assignee
Emcore Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Emcore Corp filed Critical Emcore Corp
Publication of AU2002253834A1 publication Critical patent/AU2002253834A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
AU2002253834A 2000-10-20 2001-10-19 Improved light extraction efficiency of gan based leds Abandoned AU2002253834A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24198500P 2000-10-20 2000-10-20
US60/241,985 2000-10-20
PCT/US2001/050632 WO2002063348A2 (fr) 2000-10-20 2001-10-19 Amelioration de l'efficacite d'extraction de lumiere de diodes electroluminescentes a base de gan

Publications (1)

Publication Number Publication Date
AU2002253834A1 true AU2002253834A1 (en) 2002-08-19

Family

ID=22912998

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002253834A Abandoned AU2002253834A1 (en) 2000-10-20 2001-10-19 Improved light extraction efficiency of gan based leds

Country Status (4)

Country Link
EP (1) EP1334523A2 (fr)
JP (1) JP2004519098A (fr)
AU (1) AU2002253834A1 (fr)
WO (1) WO2002063348A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1746664B1 (fr) * 2004-03-31 2017-05-17 Nichia Corporation Element electroluminescent semi-conducteur a base de nitrure
KR100721145B1 (ko) * 2006-01-11 2007-05-23 삼성전기주식회사 발광 다이오드 소자
JP2009054688A (ja) * 2007-08-24 2009-03-12 Kyocera Corp 発光素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159385A (ja) * 1982-03-17 1983-09-21 Toshiba Corp 二色発光ダイオ−ド
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
JPH0888201A (ja) * 1994-09-16 1996-04-02 Toyoda Gosei Co Ltd サファイアを基板とする半導体素子
JP3557011B2 (ja) * 1995-03-30 2004-08-25 株式会社東芝 半導体発光素子、及びその製造方法
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JP3863962B2 (ja) * 1997-03-25 2006-12-27 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子とその製造方法
US5929465A (en) * 1997-08-25 1999-07-27 Highligh Optoelectronics, Inc. Non-quadrilateral light emitting devices of compound semiconductor
JPH11340576A (ja) * 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体デバイス
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6653663B2 (en) * 1999-12-06 2003-11-25 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device

Also Published As

Publication number Publication date
WO2002063348A9 (fr) 2003-07-31
JP2004519098A (ja) 2004-06-24
EP1334523A2 (fr) 2003-08-13
WO2002063348A2 (fr) 2002-08-15
WO2002063348A3 (fr) 2003-03-20

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase