AU2002237791A1 - Ultra-linear multi-channel field effect transistor - Google Patents

Ultra-linear multi-channel field effect transistor

Info

Publication number
AU2002237791A1
AU2002237791A1 AU2002237791A AU2002237791A AU2002237791A1 AU 2002237791 A1 AU2002237791 A1 AU 2002237791A1 AU 2002237791 A AU2002237791 A AU 2002237791A AU 2002237791 A AU2002237791 A AU 2002237791A AU 2002237791 A1 AU2002237791 A1 AU 2002237791A1
Authority
AU
Australia
Prior art keywords
ultra
field effect
effect transistor
channel field
linear multi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002237791A
Inventor
Olaleye A. Aina
Harry Stephen Heir
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EPITAXIAL TECHNOLOGIES LLC
Original Assignee
EPITAXIAL TECHNOLOGIES LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EPITAXIAL TECHNOLOGIES LLC filed Critical EPITAXIAL TECHNOLOGIES LLC
Publication of AU2002237791A1 publication Critical patent/AU2002237791A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
AU2002237791A 2002-01-11 2002-01-11 Ultra-linear multi-channel field effect transistor Abandoned AU2002237791A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/000558 WO2003061017A1 (en) 2002-01-11 2002-01-11 Ultra-linear multi-channel field effect transistor

Publications (1)

Publication Number Publication Date
AU2002237791A1 true AU2002237791A1 (en) 2003-07-30

Family

ID=21743205

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002237791A Abandoned AU2002237791A1 (en) 2002-01-11 2002-01-11 Ultra-linear multi-channel field effect transistor

Country Status (2)

Country Link
AU (1) AU2002237791A1 (en)
WO (1) WO2003061017A1 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2661556B2 (en) * 1994-07-25 1997-10-08 日本電気株式会社 Field effect type semiconductor device
JP3116731B2 (en) * 1994-07-25 2000-12-11 株式会社日立製作所 Lattice-mismatched stacked crystal structure and semiconductor device using the same
US5856685A (en) * 1995-02-22 1999-01-05 Nec Corporation Heterojunction field effect transistor
US5663583A (en) * 1995-06-06 1997-09-02 Hughes Aircraft Company Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate
US5767539A (en) * 1996-04-05 1998-06-16 Nec Corporation Heterojunction field effect transistor having a InAlAs Schottky barrier layer formed upon an n-InP donor layer
JP2897736B2 (en) * 1996-09-30 1999-05-31 日本電気株式会社 Compound semiconductor field effect transistor

Also Published As

Publication number Publication date
WO2003061017A1 (en) 2003-07-24

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase