AU2002232089A1 - Imaging systems and particle detectors using silicon enriched by heavier elements - Google Patents

Imaging systems and particle detectors using silicon enriched by heavier elements

Info

Publication number
AU2002232089A1
AU2002232089A1 AU2002232089A AU2002232089A AU2002232089A1 AU 2002232089 A1 AU2002232089 A1 AU 2002232089A1 AU 2002232089 A AU2002232089 A AU 2002232089A AU 2002232089 A AU2002232089 A AU 2002232089A AU 2002232089 A1 AU2002232089 A1 AU 2002232089A1
Authority
AU
Australia
Prior art keywords
imaging systems
particle detectors
heavier elements
silicon enriched
enriched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002232089A
Other languages
English (en)
Inventor
Arie Ruzin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ramot at Tel Aviv University Ltd
Original Assignee
Ramot at Tel Aviv University Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramot at Tel Aviv University Ltd filed Critical Ramot at Tel Aviv University Ltd
Publication of AU2002232089A1 publication Critical patent/AU2002232089A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Measurement Of Radiation (AREA)
AU2002232089A 2001-02-16 2002-02-13 Imaging systems and particle detectors using silicon enriched by heavier elements Abandoned AU2002232089A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US78435101A 2001-02-16 2001-02-16
US09/784,351 2001-02-16
PCT/IL2002/000111 WO2002067271A2 (fr) 2001-02-16 2002-02-13 Systemes d'imagerie et detecteurs de particules faisant appel a du silicium enrichi en elements plus lourds

Publications (1)

Publication Number Publication Date
AU2002232089A1 true AU2002232089A1 (en) 2002-09-04

Family

ID=25132176

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002232089A Abandoned AU2002232089A1 (en) 2001-02-16 2002-02-13 Imaging systems and particle detectors using silicon enriched by heavier elements

Country Status (2)

Country Link
AU (1) AU2002232089A1 (fr)
WO (1) WO2002067271A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2849650B1 (fr) * 2003-01-06 2006-12-08 Gerard Lang Verre de borate utilise comme fondant pour la realisation de perles destinees a l'analyse par fluorescence x, et procede de preparation du dit verre
US8237126B2 (en) 2007-08-17 2012-08-07 Csem Centre Suisse D'electronique Et De Mictrotechnique Sa X-ray imaging device and method for the manufacturing thereof
EP2088451B1 (fr) 2008-02-05 2016-01-06 PANalytical B.V. Détecteur d'imagerie
KR20170097748A (ko) 2014-12-19 2017-08-28 쥐-레이 스위츨란드 에스에이 모놀리식 cmos 통합된 픽셀 검출기와, 다양한 적용예를 포함하는 입자 검출 및 이미지화를 위한 시스템 및 방법
EP3345220B1 (fr) 2015-08-31 2022-03-30 G-Ray Switzerland SA Appareil de tomodensitométrie à faisceau conique de comptage de photons avec détecteurs de pixel cmos intégrés monolithiques

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236050B1 (en) * 1996-02-02 2001-05-22 TüMER TüMAY O. Method and apparatus for radiation detection
IL119875A (en) * 1996-12-20 1999-12-31 Israel State Technique for obtaining sub-pixel spatial resolution and corrected energy determinsation from room temperature solid state gamma and x-ray detectors with segmented readout
US6169287B1 (en) * 1997-03-10 2001-01-02 William K. Warburton X-ray detector method and apparatus for obtaining spatial, energy, and/or timing information using signals from neighboring electrodes in an electrode array

Also Published As

Publication number Publication date
WO2002067271A3 (fr) 2004-03-04
WO2002067271A2 (fr) 2002-08-29

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase