AU2002230690A1 - Self-aligned magnetic clad write line and method thereof - Google Patents

Self-aligned magnetic clad write line and method thereof

Info

Publication number
AU2002230690A1
AU2002230690A1 AU2002230690A AU3069002A AU2002230690A1 AU 2002230690 A1 AU2002230690 A1 AU 2002230690A1 AU 2002230690 A AU2002230690 A AU 2002230690A AU 3069002 A AU3069002 A AU 3069002A AU 2002230690 A1 AU2002230690 A1 AU 2002230690A1
Authority
AU
Australia
Prior art keywords
self
write line
aligned magnetic
magnetic clad
clad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002230690A
Inventor
Carole C. Barron
Robert E. Jones Jr.
Eric D. Luckowski
Bradley M. Melnich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2002230690A1 publication Critical patent/AU2002230690A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
AU2002230690A 2000-11-15 2001-11-08 Self-aligned magnetic clad write line and method thereof Abandoned AU2002230690A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/713,734 2000-11-15
US09/713,734 US6555858B1 (en) 2000-11-15 2000-11-15 Self-aligned magnetic clad write line and its method of formation
PCT/US2001/047363 WO2002041367A2 (en) 2000-11-15 2001-11-08 Self-aligned magnetic clad write line and method thereof

Publications (1)

Publication Number Publication Date
AU2002230690A1 true AU2002230690A1 (en) 2002-05-27

Family

ID=24867314

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002230690A Abandoned AU2002230690A1 (en) 2000-11-15 2001-11-08 Self-aligned magnetic clad write line and method thereof

Country Status (8)

Country Link
US (2) US6555858B1 (en)
EP (1) EP1338036A2 (en)
JP (1) JP4846185B2 (en)
KR (1) KR100823465B1 (en)
CN (2) CN1262000C (en)
AU (1) AU2002230690A1 (en)
TW (1) TW519680B (en)
WO (1) WO2002041367A2 (en)

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Also Published As

Publication number Publication date
TW519680B (en) 2003-02-01
EP1338036A2 (en) 2003-08-27
JP2004514286A (en) 2004-05-13
US6555858B1 (en) 2003-04-29
KR20030059257A (en) 2003-07-07
WO2002041367A3 (en) 2003-05-01
CN1862846A (en) 2006-11-15
CN1481583A (en) 2004-03-10
WO2002041367B1 (en) 2003-06-12
US20030151079A1 (en) 2003-08-14
CN1262000C (en) 2006-06-28
JP4846185B2 (en) 2011-12-28
WO2002041367A2 (en) 2002-05-23
US6916669B2 (en) 2005-07-12
KR100823465B1 (en) 2008-04-21

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