AU2002221085A1 - Photosensor and photosensing method - Google Patents

Photosensor and photosensing method

Info

Publication number
AU2002221085A1
AU2002221085A1 AU2002221085A AU2108502A AU2002221085A1 AU 2002221085 A1 AU2002221085 A1 AU 2002221085A1 AU 2002221085 A AU2002221085 A AU 2002221085A AU 2108502 A AU2108502 A AU 2108502A AU 2002221085 A1 AU2002221085 A1 AU 2002221085A1
Authority
AU
Australia
Prior art keywords
photosensor
photosensing
photosensing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002221085A
Inventor
Seiichiro Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of AU2002221085A1 publication Critical patent/AU2002221085A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
AU2002221085A 2000-12-07 2001-12-07 Photosensor and photosensing method Abandoned AU2002221085A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-373022 2000-12-07
JP2000373022A JP2005101675A (en) 2000-12-07 2000-12-07 Photodetector and photodetecting method
PCT/JP2001/010737 WO2002047377A1 (en) 2000-12-07 2001-12-07 Photosensor and photosensing method

Publications (1)

Publication Number Publication Date
AU2002221085A1 true AU2002221085A1 (en) 2002-06-18

Family

ID=18842475

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002221085A Abandoned AU2002221085A1 (en) 2000-12-07 2001-12-07 Photosensor and photosensing method

Country Status (3)

Country Link
JP (1) JP2005101675A (en)
AU (1) AU2002221085A1 (en)
WO (1) WO2002047377A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2328779B1 (en) * 2008-05-16 2010-08-30 Consejo Superior De Investigaciones Cientificas (Csic) INTEGRATED CIRCUIT FOR THE DIGITAL READING OF HIGH SPEED IMAGE SENSORS.
JP7393152B2 (en) * 2019-08-09 2023-12-06 キヤノン株式会社 Photoelectric conversion device, imaging system, moving object and exposure control device
CN115392174A (en) * 2022-08-26 2022-11-25 苏州英嘉通半导体有限公司 Capacitance fitting method of field plate type semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119279A (en) * 1982-01-07 1983-07-15 Canon Inc Storage type photoelectric converter
JPS63157581A (en) * 1986-12-22 1988-06-30 Hamamatsu Photonics Kk Solid-state image pickup element
JP2802623B2 (en) * 1987-12-29 1998-09-24 京セラ株式会社 Image sensor output device

Also Published As

Publication number Publication date
WO2002047377A1 (en) 2002-06-13
JP2005101675A (en) 2005-04-14

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