AU2002215246A1 - Optical integrated circuit device, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same - Google Patents
Optical integrated circuit device, fabrication method of the same and module of optical communication transmission and receiving apparatus using the sameInfo
- Publication number
- AU2002215246A1 AU2002215246A1 AU2002215246A AU1524602A AU2002215246A1 AU 2002215246 A1 AU2002215246 A1 AU 2002215246A1 AU 2002215246 A AU2002215246 A AU 2002215246A AU 1524602 A AU1524602 A AU 1524602A AU 2002215246 A1 AU2002215246 A1 AU 2002215246A1
- Authority
- AU
- Australia
- Prior art keywords
- same
- module
- integrated circuit
- circuit device
- receiving apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000003287 optical effect Effects 0.000 title 2
- 230000005540 biological transmission Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optical Couplings Of Light Guides (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR0069803 | 2000-11-23 | ||
KR10-2000-0069803A KR100396742B1 (en) | 2000-11-23 | 2000-11-23 | Optical integrated circuit device having protrusion, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same |
PCT/KR2001/001910 WO2002042811A1 (en) | 2000-11-23 | 2001-11-09 | Optical integrated circuit device, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002215246A1 true AU2002215246A1 (en) | 2002-06-03 |
Family
ID=19700746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002215246A Abandoned AU2002215246A1 (en) | 2000-11-23 | 2001-11-09 | Optical integrated circuit device, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same |
Country Status (4)
Country | Link |
---|---|
US (2) | US20020106824A1 (en) |
KR (1) | KR100396742B1 (en) |
AU (1) | AU2002215246A1 (en) |
WO (1) | WO2002042811A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4210240B2 (en) * | 2004-06-03 | 2009-01-14 | ローム株式会社 | Optical communication module |
JP7306779B2 (en) * | 2019-09-13 | 2023-07-11 | 住友電工デバイス・イノベーション株式会社 | OPTO-SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
WO2022118861A1 (en) * | 2020-12-01 | 2022-06-09 | シチズン電子株式会社 | Optical device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58114479A (en) * | 1981-12-26 | 1983-07-07 | Fujitsu Ltd | Semiconductor light emitting device |
JPH02231783A (en) * | 1989-03-03 | 1990-09-13 | Mitsubishi Electric Corp | Semiconductor laser and manufacture thereof |
JPH04167569A (en) * | 1990-10-31 | 1992-06-15 | Mitsubishi Kasei Polytec Co | Protective film forming method and compound semiconductor light emitting diode provided therewith |
US5523256A (en) * | 1993-07-21 | 1996-06-04 | Matsushita Electric Industrial Co., Ltd. | Method for producing a semiconductor laser |
JPH0832171A (en) * | 1994-07-19 | 1996-02-02 | Nippondenso Co Ltd | Semiconductor laser |
JP3429407B2 (en) * | 1996-01-19 | 2003-07-22 | シャープ株式会社 | Semiconductor laser device and method of manufacturing the same |
JP3476320B2 (en) * | 1996-02-23 | 2003-12-10 | 株式会社半導体エネルギー研究所 | Semiconductor thin film and method for manufacturing the same, semiconductor device and method for manufacturing the same |
US6044098A (en) * | 1997-08-29 | 2000-03-28 | Xerox Corporation | Deep native oxide confined ridge waveguide semiconductor lasers |
JPH11135875A (en) * | 1997-10-29 | 1999-05-21 | Hitachi Ltd | Method of manufacturing semiconductor optical element |
-
2000
- 2000-11-23 KR KR10-2000-0069803A patent/KR100396742B1/en not_active IP Right Cessation
-
2001
- 2001-11-09 AU AU2002215246A patent/AU2002215246A1/en not_active Abandoned
- 2001-11-09 WO PCT/KR2001/001910 patent/WO2002042811A1/en not_active Application Discontinuation
- 2001-11-21 US US10/004,342 patent/US20020106824A1/en not_active Abandoned
-
2003
- 2003-01-14 US US10/342,912 patent/US20030153117A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20020039935A (en) | 2002-05-30 |
US20030153117A1 (en) | 2003-08-14 |
KR100396742B1 (en) | 2003-09-02 |
WO2002042811A1 (en) | 2002-05-30 |
US20020106824A1 (en) | 2002-08-08 |
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