AU2002214379A1 - Optical integrated circuit device having protrusion, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same. - Google Patents

Optical integrated circuit device having protrusion, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same.

Info

Publication number
AU2002214379A1
AU2002214379A1 AU2002214379A AU1437902A AU2002214379A1 AU 2002214379 A1 AU2002214379 A1 AU 2002214379A1 AU 2002214379 A AU2002214379 A AU 2002214379A AU 1437902 A AU1437902 A AU 1437902A AU 2002214379 A1 AU2002214379 A1 AU 2002214379A1
Authority
AU
Australia
Prior art keywords
same
protrusion
module
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002214379A
Inventor
Ki Chul Shin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iljin Corp
Original Assignee
Iljin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iljin Corp filed Critical Iljin Corp
Publication of AU2002214379A1 publication Critical patent/AU2002214379A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
AU2002214379A 2000-11-23 2001-11-09 Optical integrated circuit device having protrusion, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same. Abandoned AU2002214379A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020000069802A KR100361593B1 (en) 2000-11-23 2000-11-23 Optical integrated circuit device having protrusion, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same
KR0069802 2000-11-23
PCT/KR2001/001909 WO2002042820A1 (en) 2000-11-23 2001-11-09 Optical integrated circuit device having protrusion, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same.

Publications (1)

Publication Number Publication Date
AU2002214379A1 true AU2002214379A1 (en) 2002-06-03

Family

ID=19700745

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002214379A Abandoned AU2002214379A1 (en) 2000-11-23 2001-11-09 Optical integrated circuit device having protrusion, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same.

Country Status (7)

Country Link
US (1) US6577781B2 (en)
EP (1) EP1342118A4 (en)
JP (1) JP2004515063A (en)
KR (1) KR100361593B1 (en)
CN (1) CN1476544A (en)
AU (1) AU2002214379A1 (en)
WO (1) WO2002042820A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7079559B2 (en) * 2003-02-25 2006-07-18 Tyco Electronics Corporation Flip-chip automatically aligned optical device
JP2004334189A (en) * 2003-04-14 2004-11-25 Fujikura Ltd Mounting member for optical module, optical module, array type optical module, optical transmission module
JP2010078806A (en) 2008-09-25 2010-04-08 Fuji Xerox Co Ltd Optical module, optical transmission device, and surface optical device
JP2010226078A (en) 2009-02-24 2010-10-07 Sony Corp Light-emitting device and method of manufacturing same
DE112014002594A5 (en) 2013-05-31 2016-04-21 Silicon Line Gmbh Device for coupling and / or decoupling optical signals
JP1600681S (en) * 2017-05-30 2018-03-26
JP1600060S (en) * 2017-05-30 2018-03-19
JP2024018311A (en) * 2022-07-29 2024-02-08 浜松ホトニクス株式会社 semiconductor laser equipment
JP2024018423A (en) * 2022-07-29 2024-02-08 浜松ホトニクス株式会社 semiconductor laser equipment

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114479A (en) * 1981-12-26 1983-07-07 Fujitsu Ltd Semiconductor light emitting device
GB2156584B (en) * 1984-03-16 1987-11-04 Hitachi Ltd Semiconductor laser chip
ATE48480T1 (en) * 1985-10-16 1989-12-15 British Telecomm MOVABLE HOUSING FOR ONE ELEMENT.
FR2613547B1 (en) * 1987-04-01 1989-06-23 Cit Alcatel SEMICONDUCTOR LASER WITH UNDERGROUND HETEROSTRUCTURE
JPH02231783A (en) * 1989-03-03 1990-09-13 Mitsubishi Electric Corp Semiconductor laser and manufacture thereof
JPH04167569A (en) * 1990-10-31 1992-06-15 Mitsubishi Kasei Polytec Co Protective film forming method and compound semiconductor light emitting diode provided therewith
JPH05249340A (en) * 1992-03-06 1993-09-28 Sumitomo Electric Ind Ltd Coupling device for optical parts
JPH05304306A (en) * 1992-04-27 1993-11-16 Nippon Telegr & Teleph Corp <Ntt> Electrooptic module and manufacture thereof
JP3225699B2 (en) * 1992-12-15 2001-11-05 ソニー株式会社 Semiconductor laser and optical device using the same
JPH0750450A (en) * 1993-08-04 1995-02-21 Furukawa Electric Co Ltd:The Parallel type optical semiconductor device
KR100265803B1 (en) * 1993-10-26 2000-09-15 Samsung Electronics Co Ltd Semiconductor laser and its manufacturing method
US5824186A (en) * 1993-12-17 1998-10-20 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
JPH0832171A (en) * 1994-07-19 1996-02-02 Nippondenso Co Ltd Semiconductor laser
KR100303279B1 (en) * 1994-08-27 2001-12-01 윤종용 Semiconductor laser diode and manufacturing method therefor
JP3658426B2 (en) * 1995-01-23 2005-06-08 株式会社日立製作所 Optical semiconductor device
WO1997011398A1 (en) * 1995-09-20 1997-03-27 Hitachi, Ltd. Optical module
JPH09186348A (en) * 1995-12-29 1997-07-15 Furukawa Electric Co Ltd:The Semiconductor module
JPH1039179A (en) * 1996-07-26 1998-02-13 Mitsubishi Electric Corp Manufacture of optical semiconductor device
EP0871049A1 (en) * 1997-04-11 1998-10-14 Hewlett-Packard Company Semiconductor device
JP3239933B2 (en) * 1997-07-23 2001-12-17 日本電気株式会社 Semiconductor optical device, method of manufacturing semiconductor optical device, and mounting structure of semiconductor optical device
US6044098A (en) * 1997-08-29 2000-03-28 Xerox Corporation Deep native oxide confined ridge waveguide semiconductor lasers
JPH11204808A (en) * 1998-01-13 1999-07-30 Nichia Chem Ind Ltd Optical semiconductor element
US6503769B2 (en) * 1998-10-26 2003-01-07 Matsushita Electronics Corporation Semiconductor device and method for fabricating the same
US6522676B1 (en) * 1999-01-26 2003-02-18 Sanyo Electric Co., Ltd Nitride semiconductor laser device
US6865205B2 (en) * 2001-05-17 2005-03-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser

Also Published As

Publication number Publication date
EP1342118A1 (en) 2003-09-10
CN1476544A (en) 2004-02-18
US6577781B2 (en) 2003-06-10
EP1342118A4 (en) 2005-08-03
KR20020039934A (en) 2002-05-30
US20020102043A1 (en) 2002-08-01
JP2004515063A (en) 2004-05-20
KR100361593B1 (en) 2002-11-22
WO2002042820A1 (en) 2002-05-30

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