AU2002215050A1 - Method for the production of high purity silicon - Google Patents

Method for the production of high purity silicon

Info

Publication number
AU2002215050A1
AU2002215050A1 AU2002215050A AU1505002A AU2002215050A1 AU 2002215050 A1 AU2002215050 A1 AU 2002215050A1 AU 2002215050 A AU2002215050 A AU 2002215050A AU 1505002 A AU1505002 A AU 1505002A AU 2002215050 A1 AU2002215050 A1 AU 2002215050A1
Authority
AU
Australia
Prior art keywords
sub
sih
sihcl
give
feed gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002215050A
Inventor
Dr. Hans-Dieter Block
Hans-Joachim Leimkuhler
Leslaw Mleczko
Johannes-Peter Schafer
Dietmar Schwanke
Gebhard Wagner
Rainer Weber
Knud Werner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SolarWorld AG
Original Assignee
SolarWorld AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7666710&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AU2002215050(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by SolarWorld AG filed Critical SolarWorld AG
Publication of AU2002215050A1 publication Critical patent/AU2002215050A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to a method for the production of high purity silicon, characterized by the following steps: a) reaction of metallic silicon with silicon tetrachloride (SiCl<SUB>4</SUB>), hydrogen (H<SUB>2</SUB>) and hydrochloric acid (HCl) at a temperature of 500 to 800° C. and a pressure of 25 to 40 bar to give a trichlorosilane-containing (SiHCl<SUB>3</SUB>) feed gas stream, b) removal of impurities from the resultant trichlorosilane-containing feed gas stream by scrubbing with condensed chlorosilanes at a pressure of 25 to 40 bar and a temperature of 160 to 200° C. in a multi-stage distillation column, to give a purified trichlorosilane-containing feed gas stream and a solid-containing chlorosilane suspension and a distillative separation of the purified feed gas stream into a partial stream essentially comprising SiCl<SUB>4 </SUB>and a partial stream, essentially comprising SiHCl<SUB>3</SUB>, c) disproportionation of the SiHCl<SUB>3</SUB>-containing partial stream to give SiCl<SUB>4 </SUB>and SiH<SUB>4</SUB>, whereby the disproportionation is carried out in several reactive/distillative reaction zones, with a counter-current of vapour and liquid, on catalytic solids at a pressure of 500 mbar to 50 bar and SiHCl<SUB>3 </SUB>is introduced into a first reaction zone, the lower boiling SiH<SUB>4</SUB>-containing disproportionation product produced there undergoes an intermediate condensation in a temperature range of -25° C. to 50° C., the non-condensing SiH<SUB>4</SUB>-containing product mixture is fed to one or more further reactive/distillative reaction zones and the lower boiling product thus generated, containing a high proportion of SiH<SUB>4 </SUB>is completely or partially condensed in the head condenser and d) thermal decomposition of the SiH<SUB>4 </SUB>to give high purity silicon.
AU2002215050A 2000-12-11 2001-11-21 Method for the production of high purity silicon Abandoned AU2002215050A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10061682 2000-12-11
DE10061682A DE10061682A1 (en) 2000-12-11 2000-12-11 Process for the production of high-purity silicon
PCT/EP2001/013507 WO2002048034A1 (en) 2000-12-11 2001-11-21 Method for the production of high purity silicon

Publications (1)

Publication Number Publication Date
AU2002215050A1 true AU2002215050A1 (en) 2002-06-24

Family

ID=7666710

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002215050A Abandoned AU2002215050A1 (en) 2000-12-11 2001-11-21 Method for the production of high purity silicon

Country Status (6)

Country Link
US (1) US6887448B2 (en)
EP (1) EP1341720B1 (en)
AT (1) ATE287853T1 (en)
AU (1) AU2002215050A1 (en)
DE (2) DE10061682A1 (en)
WO (1) WO2002048034A1 (en)

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US7175685B1 (en) * 2002-04-15 2007-02-13 Gt Solar Incorporated Dry conversion of high purity ultrafine silicon powder to densified pellet form for silicon melting applications
US20070148034A1 (en) * 2002-04-15 2007-06-28 Gt Solar Incorporated Dry conversion of high purity ultrafine silicon powder to densified pellet form for silicon melting applications
US20060183958A1 (en) * 2003-04-01 2006-08-17 Breneman William C Process for the treatment of waste metal chlorides
DE102004010055A1 (en) * 2004-03-02 2005-09-22 Degussa Ag Process for the production of silicon
DE102004027563A1 (en) * 2004-06-04 2005-12-22 Joint Solar Silicon Gmbh & Co. Kg Silicon and process for its production
CN101143723B (en) 2007-08-08 2010-09-01 徐州东南多晶硅材料研发有限公司 Modified method and device for preparing trichlorosilane and multicrystal silicon
US7754175B2 (en) * 2007-08-29 2010-07-13 Dynamic Engineering, Inc. Silicon and catalyst material preparation in a process for producing trichlorosilane
DE102008017304A1 (en) * 2008-03-31 2009-10-01 Schmid Silicon Technology Gmbh Process and plant for the production of ultrapure silicon
US7736614B2 (en) * 2008-04-07 2010-06-15 Lord Ltd., Lp Process for removing aluminum and other metal chlorides from chlorosilanes
US20100264362A1 (en) * 2008-07-01 2010-10-21 Yongchae Chee Method of producing trichlorosilane (TCS) rich Chlorosilane product stably from a fluidized gas phase reactor (FBR) and the structure of the reactor
US9067338B2 (en) * 2008-08-04 2015-06-30 Semlux Technologies, Inc. Method to convert waste silicon to high purity silicon
DE102008041974A1 (en) 2008-09-10 2010-03-11 Evonik Degussa Gmbh Device, its use and a method for self-sufficient hydrogenation of chlorosilanes
CN103787336B (en) * 2008-09-16 2016-09-14 储晞 The method producing high purity granular silicon
US20100124525A1 (en) * 2008-11-19 2010-05-20 Kuyen Li ZERO-HEAT-BURDEN FLUIDIZED BED REACTOR FOR HYDRO-CHLORINATION OF SiCl4 and M.G.-Si
TW201113391A (en) * 2009-03-19 2011-04-16 Ae Polysilicon Corp Silicide-coated metal surfaces and methods of utilizing same
AU2010239352A1 (en) * 2009-04-20 2011-11-10 Ae Polysilicon Corporation Processes and an apparatus for manufacturing high purity polysilicon
JP2012523963A (en) * 2009-04-20 2012-10-11 エーイー ポリシリコン コーポレーション Reactor with metal surface coated with silicide
US8235305B2 (en) 2009-04-20 2012-08-07 Ae Polysilicon Corporation Methods and system for cooling a reaction effluent gas
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US8298490B2 (en) 2009-11-06 2012-10-30 Gtat Corporation Systems and methods of producing trichlorosilane
KR101672796B1 (en) * 2009-11-10 2016-11-07 주식회사 케이씨씨 Method for producing high purity trichlorosilane for poly-silicon using chlorine gas or hydrogen chloride
CN103025746A (en) 2010-01-26 2013-04-03 道康宁公司 Method of preparing an organohalosilane
US8772525B2 (en) 2010-05-28 2014-07-08 Dow Corning Corporation Method for preparing a diorganodihalosilane
EP2576572A1 (en) 2010-05-28 2013-04-10 Dow Corning Corporation Preparation of organohalosilanes
US20110300050A1 (en) * 2010-06-08 2011-12-08 Memc Electronic Materials, Inc. Trichlorosilane Vaporization System
US8765090B2 (en) * 2010-09-08 2014-07-01 Dow Corning Corporation Method for preparing a trihalosilane
WO2012082686A1 (en) 2010-12-17 2012-06-21 Dow Corning Corporation Method of making a trihalosilane
RU2013122125A (en) 2010-12-17 2015-01-27 Дау Корнинг Корпорейшн METHOD FOR PRODUCING DIORGANODIGALOGENILSILANE
US8715597B2 (en) 2010-12-20 2014-05-06 Memc Electronic Materials, Inc. Production of polycrystalline silicon in substantially closed-loop systems that involve disproportionation operations
US8404205B2 (en) * 2011-01-07 2013-03-26 Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds
RU2013125229A (en) 2011-01-25 2015-03-10 Дау Корнинг Корпорейшн METHOD FOR PRODUCING DIORGANODIGALOGENILSILANE
JP6040254B2 (en) 2011-11-17 2016-12-07 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ Method for preparing diorganodihalosilane
CN102491337A (en) * 2011-12-16 2012-06-13 大连理工常州研究院有限公司 Method for preparing high-purity silicon powder through microwave plasma torch
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JP2015532683A (en) 2012-08-30 2015-11-12 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ Electrolytic process for silicides
CN104583221B (en) 2012-10-16 2018-05-01 道康宁公司 The method for preparing halogenation sila Asia hydrocarbon
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JP6479794B2 (en) 2013-11-12 2019-03-06 ダウ シリコーンズ コーポレーション Method for producing halosilane
WO2016099690A1 (en) 2014-12-18 2016-06-23 Dow Corning Corporation Method for producing aryl-functional silanes
CN107108236A (en) * 2014-12-18 2017-08-29 赫姆洛克半导体运营有限责任公司 The method for hydrogenating halogenated silanes
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Also Published As

Publication number Publication date
WO2002048034A1 (en) 2002-06-20
US20040047797A1 (en) 2004-03-11
ATE287853T1 (en) 2005-02-15
EP1341720A1 (en) 2003-09-10
US6887448B2 (en) 2005-05-03
DE10061682A1 (en) 2002-07-04
EP1341720B1 (en) 2005-01-26
DE50105221D1 (en) 2005-03-03

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