AU2002210567A1 - Cvd reactor comprising a substrate holder rotatably mounted and driven by a gas flow - Google Patents

Cvd reactor comprising a substrate holder rotatably mounted and driven by a gas flow

Info

Publication number
AU2002210567A1
AU2002210567A1 AU2002210567A AU1056702A AU2002210567A1 AU 2002210567 A1 AU2002210567 A1 AU 2002210567A1 AU 2002210567 A AU2002210567 A AU 2002210567A AU 1056702 A AU1056702 A AU 1056702A AU 2002210567 A1 AU2002210567 A1 AU 2002210567A1
Authority
AU
Australia
Prior art keywords
driven
gas flow
rotatably mounted
substrate holder
cvd reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002210567A
Inventor
Rune Berge
Johannes Kappeler
Frank Wischmeyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2002210567A1 publication Critical patent/AU2002210567A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
AU2002210567A 2000-11-08 2001-10-25 Cvd reactor comprising a substrate holder rotatably mounted and driven by a gas flow Abandoned AU2002210567A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10055182 2000-11-08
DE10055182A DE10055182A1 (en) 2000-11-08 2000-11-08 CVD reactor with substrate holder rotatably supported and driven by a gas stream
PCT/EP2001/012311 WO2002038839A1 (en) 2000-11-08 2001-10-25 Cvd reactor comprising a substrate holder rotatably mounted and driven by a gas flow

Publications (1)

Publication Number Publication Date
AU2002210567A1 true AU2002210567A1 (en) 2002-05-21

Family

ID=7662458

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002210567A Abandoned AU2002210567A1 (en) 2000-11-08 2001-10-25 Cvd reactor comprising a substrate holder rotatably mounted and driven by a gas flow

Country Status (8)

Country Link
US (1) US6811614B2 (en)
EP (1) EP1337700B1 (en)
JP (1) JP4099060B2 (en)
KR (1) KR100769410B1 (en)
AU (1) AU2002210567A1 (en)
DE (2) DE10055182A1 (en)
TW (1) TW526277B (en)
WO (1) WO2002038839A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60231256D1 (en) 2002-12-10 2009-04-02 E T C Epitaxial Technology Ct susceptor system
JP4423205B2 (en) * 2002-12-10 2010-03-03 イー・テイ・シー・エピタキシヤル・テクノロジー・センター・エス・アール・エル Susceptor system and apparatus including susceptor system
US7118781B1 (en) 2003-04-16 2006-10-10 Cree, Inc. Methods for controlling formation of deposits in a deposition system and deposition methods including the same
ATE501286T1 (en) * 2004-06-09 2011-03-15 E T C Epitaxial Technology Ct Srl HOLDER SYSTEM FOR TREATMENT APPARATUS
DE102004062553A1 (en) * 2004-12-24 2006-07-06 Aixtron Ag CVD reactor with RF heated process chamber
KR100621220B1 (en) 2004-12-28 2006-09-13 동부일렉트로닉스 주식회사 Apparatus for reducing friction of racer using gas
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
US8628622B2 (en) * 2005-09-12 2014-01-14 Cree, Inc. Gas driven rotation apparatus and method for forming crystalline layers
DE102005055252A1 (en) * 2005-11-19 2007-05-24 Aixtron Ag CVD reactor with slide-mounted susceptor holder
JP5051875B2 (en) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 Film forming apparatus and film forming method
US8430965B2 (en) * 2007-02-16 2013-04-30 Pronomic Industry Ab Epitaxial growth system for fast heating and cooling
KR101177983B1 (en) 2007-10-11 2012-08-29 발렌스 프로세스 이큅먼트, 인코포레이티드 Chemical vapor deposition reactor
KR101046068B1 (en) * 2008-11-27 2011-07-01 삼성엘이디 주식회사 Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having same
DE102014100092A1 (en) 2013-01-25 2014-07-31 Aixtron Se CVD system with particle separator
JP2017055086A (en) * 2015-09-11 2017-03-16 昭和電工株式会社 MANUFACTURING METHOD OF SiC EPITAXIAL WAFER AND MANUFACTURING APPARATUS OF SiC EPITAXIAL WAFER
US10428425B2 (en) * 2016-01-26 2019-10-01 Tokyo Electron Limited Film deposition apparatus, method of depositing film, and non-transitory computer-readable recording medium
SE541039C2 (en) 2016-05-12 2019-03-12 Epiluvac Ab CVD Reactor With A Multi-Zone Heated Process Chamber
KR102369676B1 (en) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 Apparatus and method for manufacturing a display apparatus
CN113846375B (en) * 2021-09-24 2022-11-04 深圳市中科光芯半导体科技有限公司 Carrier tray and organic metal vapor deposition equipment

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721210A (en) * 1971-04-19 1973-03-20 Texas Instruments Inc Low volume deposition reactor
US4846102A (en) * 1987-06-24 1989-07-11 Epsilon Technology, Inc. Reaction chambers for CVD systems
US5096534A (en) * 1987-06-24 1992-03-17 Epsilon Technology, Inc. Method for improving the reactant gas flow in a reaction chamber
DE3721636A1 (en) * 1987-06-30 1989-01-12 Aixtron Gmbh QUARTZ GLASS REACTOR FOR MOCVD SYSTEMS
US5226383A (en) * 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
SE9500326D0 (en) * 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
TW331652B (en) * 1995-06-16 1998-05-11 Ebara Corp Thin film vapor deposition apparatus
SE9600704D0 (en) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US6039812A (en) * 1996-10-21 2000-03-21 Abb Research Ltd. Device for epitaxially growing objects and method for such a growth
US6133152A (en) * 1997-05-16 2000-10-17 Applied Materials, Inc. Co-rotating edge ring extension for use in a semiconductor processing chamber
DE19934336A1 (en) * 1998-09-03 2000-03-09 Siemens Ag High temperature silicon carbide semiconductor substrate production and treatment apparatus, especially for silicon carbide epitaxy, has a susceptor completely covered by a cover plate and the substrate

Also Published As

Publication number Publication date
TW526277B (en) 2003-04-01
US6811614B2 (en) 2004-11-02
JP4099060B2 (en) 2008-06-11
EP1337700B1 (en) 2005-08-24
DE10055182A1 (en) 2002-05-29
JP2004513243A (en) 2004-04-30
US20040007187A1 (en) 2004-01-15
WO2002038839A1 (en) 2002-05-16
EP1337700A1 (en) 2003-08-27
DE50107223D1 (en) 2005-09-29
KR100769410B1 (en) 2007-10-22
KR20030059199A (en) 2003-07-07

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