AU2001292903A1 - High performance ultraviolet imager for operation at room temperature - Google Patents

High performance ultraviolet imager for operation at room temperature

Info

Publication number
AU2001292903A1
AU2001292903A1 AU2001292903A AU9290301A AU2001292903A1 AU 2001292903 A1 AU2001292903 A1 AU 2001292903A1 AU 2001292903 A AU2001292903 A AU 2001292903A AU 9290301 A AU9290301 A AU 9290301A AU 2001292903 A1 AU2001292903 A1 AU 2001292903A1
Authority
AU
Australia
Prior art keywords
room temperature
high performance
ultraviolet imager
performance ultraviolet
imager
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001292903A
Inventor
Roger E. Dewames
Lester J. Kozlowski
Bryan T. Mcdermott
Gerard J. Sullivan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne Scientific and Imaging LLC
Original Assignee
Innovative Technology Licensing LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innovative Technology Licensing LLC filed Critical Innovative Technology Licensing LLC
Publication of AU2001292903A1 publication Critical patent/AU2001292903A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
AU2001292903A 2000-09-25 2001-09-20 High performance ultraviolet imager for operation at room temperature Abandoned AU2001292903A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/669,244 US6483116B1 (en) 2000-04-25 2000-09-25 High performance ultraviolet imager for operation at room temperature
US09669244 2000-09-25
PCT/US2001/029544 WO2002027798A2 (en) 2000-09-25 2001-09-20 High performance ultraviolet imager for operation at room temperature

Publications (1)

Publication Number Publication Date
AU2001292903A1 true AU2001292903A1 (en) 2002-04-08

Family

ID=24685643

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001292903A Abandoned AU2001292903A1 (en) 2000-09-25 2001-09-20 High performance ultraviolet imager for operation at room temperature

Country Status (5)

Country Link
US (1) US6483116B1 (en)
EP (1) EP1323193A2 (en)
JP (1) JP2004510352A (en)
AU (1) AU2001292903A1 (en)
WO (1) WO2002027798A2 (en)

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US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
DE10142531A1 (en) * 2001-08-30 2003-03-20 Philips Corp Intellectual Pty Sensor arrangement of light and / or X-ray sensitive sensors
JP2003177063A (en) * 2001-12-12 2003-06-27 Fuji Xerox Co Ltd Ultraviolet light receiver and method for measuring optical quantity of ultraviolet ray using the same
JP4012743B2 (en) * 2002-02-12 2007-11-21 浜松ホトニクス株式会社 Photodetector
US7329895B2 (en) * 2002-02-22 2008-02-12 Honeywell International Inc. Dual wavelength detector
US6974973B2 (en) * 2002-11-08 2005-12-13 Micron Technology, Inc. Apparatus for determining temperature of an active pixel imager and correcting temperature induced variations in an imager
US7046284B2 (en) * 2003-09-30 2006-05-16 Innovative Technology Licensing Llc CMOS imaging system with low fixed pattern noise
US20050068438A1 (en) * 2003-09-30 2005-03-31 Innovative Technology Licensing, Llc Low noise CMOS amplifier for imaging sensors
KR100718878B1 (en) 2005-06-28 2007-05-17 (주)실리콘화일 Separation type unit pixel of image sensor having 3 dimension structure and manufacture method thereof
EP2432015A1 (en) * 2007-04-18 2012-03-21 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US8525287B2 (en) 2007-04-18 2013-09-03 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US20100044676A1 (en) 2008-04-18 2010-02-25 Invisage Technologies, Inc. Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals
TWI346393B (en) * 2007-07-05 2011-08-01 Univ Nat Taiwan A method for forming a p-n junction photodiode and an apparatus for the same
US8212327B2 (en) * 2008-03-06 2012-07-03 Sionyx, Inc. High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme
US8203195B2 (en) 2008-04-18 2012-06-19 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
WO2011156507A1 (en) 2010-06-08 2011-12-15 Edward Hartley Sargent Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
JP5486541B2 (en) * 2011-03-31 2014-05-07 浜松ホトニクス株式会社 Photodiode array module and manufacturing method thereof
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
EP2732402A2 (en) 2011-07-13 2014-05-21 Sionyx, Inc. Biometric imaging devices and associated methods
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
CN104885222B (en) * 2012-12-18 2018-03-02 松下知识产权经营株式会社 Light detecter for semiconductor
WO2014127376A2 (en) 2013-02-15 2014-08-21 Sionyx, Inc. High dynamic range cmos image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
JP6540780B2 (en) * 2017-12-12 2019-07-10 ソニー株式会社 Imaging device and imaging device

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Also Published As

Publication number Publication date
JP2004510352A (en) 2004-04-02
EP1323193A2 (en) 2003-07-02
WO2002027798A3 (en) 2002-05-30
WO2002027798A2 (en) 2002-04-04
US6483116B1 (en) 2002-11-19

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