AU2001290735A1 - Tunable focus ring for plasma processing - Google Patents

Tunable focus ring for plasma processing

Info

Publication number
AU2001290735A1
AU2001290735A1 AU2001290735A AU9073501A AU2001290735A1 AU 2001290735 A1 AU2001290735 A1 AU 2001290735A1 AU 2001290735 A AU2001290735 A AU 2001290735A AU 9073501 A AU9073501 A AU 9073501A AU 2001290735 A1 AU2001290735 A1 AU 2001290735A1
Authority
AU
Australia
Prior art keywords
plasma processing
focus ring
tunable focus
tunable
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001290735A
Inventor
Wayne L. Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001290735A1 publication Critical patent/AU2001290735A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
AU2001290735A 2000-09-18 2001-09-12 Tunable focus ring for plasma processing Abandoned AU2001290735A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23362300P 2000-09-18 2000-09-18
US60233623 2000-09-18
PCT/US2001/028318 WO2002025695A2 (en) 2000-09-18 2001-09-12 Tunable focus ring for plasma processing

Publications (1)

Publication Number Publication Date
AU2001290735A1 true AU2001290735A1 (en) 2002-04-02

Family

ID=22878026

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001290735A Abandoned AU2001290735A1 (en) 2000-09-18 2001-09-12 Tunable focus ring for plasma processing

Country Status (4)

Country Link
US (1) US20030201069A1 (en)
AU (1) AU2001290735A1 (en)
TW (1) TW506234B (en)
WO (1) WO2002025695A2 (en)

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8114245B2 (en) * 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US6963043B2 (en) * 2002-08-28 2005-11-08 Tokyo Electron Limited Asymmetrical focus ring
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US6898558B2 (en) * 2002-12-31 2005-05-24 Tokyo Electron Limited Method and apparatus for monitoring a material processing system
KR100585089B1 (en) * 2003-05-27 2006-05-30 삼성전자주식회사 Plasma processing apparatus for processing the edge of wafer, insulating plate for plasma processing, bottom electrode for plasma processing, method of plasma processing the edge of wafer and method of fabricating semiconductor device using the same
GB0323001D0 (en) * 2003-10-01 2003-11-05 Oxford Instr Plasma Technology Apparatus and method for plasma treating a substrate
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
JP2006319043A (en) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp Plasma processor
JP2006351887A (en) * 2005-06-17 2006-12-28 Hitachi High-Technologies Corp Plasma processing device
US8674255B1 (en) * 2005-12-08 2014-03-18 Lam Research Corporation Apparatus and method for controlling etch uniformity
US7683289B2 (en) * 2005-12-16 2010-03-23 Lam Research Corporation Apparatus and method for controlling plasma density profile
US20070215607A1 (en) * 2006-03-20 2007-09-20 Wander Joseph M Apparatus and method for heating semiconductor wafers via microwares
US7758929B2 (en) * 2006-03-31 2010-07-20 Tokyo Electron Limited Plasma processing apparatus and method
JP4988402B2 (en) * 2007-03-30 2012-08-01 株式会社日立ハイテクノロジーズ Plasma processing equipment
US8563619B2 (en) * 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
US7758764B2 (en) * 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US20090221150A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Etch rate and critical dimension uniformity by selection of focus ring material
JP5294669B2 (en) * 2008-03-25 2013-09-18 東京エレクトロン株式会社 Plasma processing equipment
JP2009277720A (en) * 2008-05-12 2009-11-26 Nec Electronics Corp Method of manufacturing semiconductor device and etching device
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
JP5371466B2 (en) * 2009-02-12 2013-12-18 株式会社日立ハイテクノロジーズ Plasma processing method
JP5657262B2 (en) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 Plasma processing equipment
JP5350043B2 (en) * 2009-03-31 2013-11-27 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP5584517B2 (en) * 2010-05-12 2014-09-03 東京エレクトロン株式会社 Plasma processing apparatus and semiconductor device manufacturing method
US9478428B2 (en) 2010-10-05 2016-10-25 Skyworks Solutions, Inc. Apparatus and methods for shielding a plasma etcher electrode
US20120083129A1 (en) * 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and methods for focusing plasma
US8486798B1 (en) 2012-02-05 2013-07-16 Tokyo Electron Limited Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof
US8721833B2 (en) 2012-02-05 2014-05-13 Tokyo Electron Limited Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof
US9412579B2 (en) 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
JP5970268B2 (en) * 2012-07-06 2016-08-17 株式会社日立ハイテクノロジーズ Plasma processing apparatus and processing method
US10002744B2 (en) * 2013-12-17 2018-06-19 Tokyo Electron Limited System and method for controlling plasma density
WO2015099892A1 (en) * 2013-12-23 2015-07-02 Applied Materials, Inc. Extreme edge and skew control in icp plasma reactor
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US11605546B2 (en) 2015-01-16 2023-03-14 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
CN106920729B (en) * 2015-12-28 2019-05-31 中微半导体设备(上海)股份有限公司 A kind of plasma processing apparatus and method of uniform etching substrate
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
CN108369922B (en) 2016-01-26 2023-03-21 应用材料公司 Wafer edge ring lifting solution
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US11011353B2 (en) 2016-03-29 2021-05-18 Lam Research Corporation Systems and methods for performing edge ring characterization
US10312121B2 (en) 2016-03-29 2019-06-04 Lam Research Corporation Systems and methods for aligning measurement device in substrate processing systems
GB201608926D0 (en) 2016-05-20 2016-07-06 Spts Technologies Ltd Method for plasma etching a workpiece
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10665433B2 (en) * 2016-09-19 2020-05-26 Varian Semiconductor Equipment Associates, Inc. Extreme edge uniformity control
KR101909479B1 (en) * 2016-10-06 2018-10-19 세메스 주식회사 Substrate support unit, substrate treating apparauts including the same, and method for controlling the same
US20180122670A1 (en) * 2016-11-01 2018-05-03 Varian Semiconductor Equipment Associates, Inc. Removable substrate plane structure ring
US10510516B2 (en) 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Moving focus ring for plasma etcher
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
JP6869034B2 (en) * 2017-01-17 2021-05-12 東京エレクトロン株式会社 Plasma processing equipment
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
TW202341281A (en) * 2017-04-26 2023-10-16 日商東京威力科創股份有限公司 Plasma processing apparatus
CN109216144B (en) * 2017-07-03 2021-08-06 中微半导体设备(上海)股份有限公司 Plasma reactor with low-frequency radio frequency power distribution adjusting function
US10763081B2 (en) * 2017-07-10 2020-09-01 Applied Materials, Inc. Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
WO2019014002A1 (en) * 2017-07-13 2019-01-17 Applied Materials, Inc. Substrate processing method and apparatus
KR102432857B1 (en) * 2017-09-01 2022-08-16 삼성전자주식회사 plasma processing apparatus and manufacturing method of semiconductor device using the same
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
TWI625493B (en) 2017-10-02 2018-06-01 Ornamental fire combination structure
JP6966286B2 (en) * 2017-10-11 2021-11-10 東京エレクトロン株式会社 Plasma processing device, focus ring elevation control method and focus ring elevation control program
KR102538177B1 (en) 2017-11-16 2023-05-31 삼성전자주식회사 Deposition apparatus including upper shower head and lower shower head
KR102404061B1 (en) 2017-11-16 2022-05-31 삼성전자주식회사 Deposition apparatus including upper shower head and lower shower head
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
CN109994355B (en) * 2017-12-29 2021-11-02 中微半导体设备(上海)股份有限公司 Plasma reactor with low-frequency radio frequency power distribution adjusting function
CN110416049B (en) * 2018-04-28 2022-02-11 中微半导体设备(上海)股份有限公司 CCP etching device and method capable of adjusting edge radio frequency plasma distribution
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US10600623B2 (en) 2018-05-28 2020-03-24 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
KR102111504B1 (en) * 2018-10-15 2020-05-18 세메스 주식회사 Substrate processing apparatus and method
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
NL2022138B1 (en) * 2018-12-05 2020-06-30 Blue Plasma Holding B V A method to control a cold plasma treatment process for cleaning, disinfection and sterilization purposes of an object
JP7451540B2 (en) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド Feedback loop for controlling pulsed voltage waveforms
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
KR102228545B1 (en) * 2019-04-03 2021-03-16 주식회사 테스 Substrate processing apparatus
US11101115B2 (en) 2019-04-19 2021-08-24 Applied Materials, Inc. Ring removal from processing chamber
CN112103163B (en) * 2019-06-17 2022-06-17 北京北方华创微电子装备有限公司 Bottom electrode device and related plasma system
CN112530775A (en) * 2019-09-18 2021-03-19 中微半导体设备(上海)股份有限公司 Plasma processing device
US11443923B2 (en) * 2019-09-25 2022-09-13 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus for fabricating a semiconductor structure and method of fabricating a semiconductor structure
US11804368B2 (en) * 2020-03-02 2023-10-31 Tokyo Electron Limited Cleaning method and plasma processing apparatus
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
KR20220076639A (en) * 2020-12-01 2022-06-08 삼성전자주식회사 Plasma processing apparatus and method for fabricating semiconductor device using the same
CN112736015A (en) * 2020-12-31 2021-04-30 拓荆科技股份有限公司 Apparatus for adjusting plasma profile in a processing chamber and method for controlling the same
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US20230260763A1 (en) * 2022-02-15 2023-08-17 Taiwan Semiconductor Manufacturing Company Semiconductor manufacturing chamber with plasma/gas flow control device
WO2024040520A1 (en) * 2022-08-25 2024-02-29 Beijing Naura Microelectronics Equipment Co., Ltd. Segmented focus ring for plasma semiconductor processing and processing tool configured to use the segmented focus ring

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US5411624A (en) * 1991-07-23 1995-05-02 Tokyo Electron Limited Magnetron plasma processing apparatus
JP2638443B2 (en) * 1993-08-31 1997-08-06 日本電気株式会社 Dry etching method and dry etching apparatus
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
US5762714A (en) * 1994-10-18 1998-06-09 Applied Materials, Inc. Plasma guard for chamber equipped with electrostatic chuck
JP2666768B2 (en) * 1995-04-27 1997-10-22 日本電気株式会社 Dry etching method and apparatus
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US5817534A (en) * 1995-12-04 1998-10-06 Applied Materials, Inc. RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US5942039A (en) * 1997-05-01 1999-08-24 Applied Materials, Inc. Self-cleaning focus ring
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6184489B1 (en) * 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6022809A (en) * 1998-12-03 2000-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Composite shadow ring for an etch chamber and method of using
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity

Also Published As

Publication number Publication date
US20030201069A1 (en) 2003-10-30
WO2002025695A3 (en) 2002-06-13
WO2002025695A2 (en) 2002-03-28
TW506234B (en) 2002-10-11

Similar Documents

Publication Publication Date Title
AU2001290735A1 (en) Tunable focus ring for plasma processing
AU2002332421A1 (en) Plasma ashing process
AU2001271030A1 (en) Plasma processing apparatus
AU2002321598A1 (en) Optical processing
AU2001212331A1 (en) Hiking exercice apparatus
AU4582499A (en) Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
AU2002366921A1 (en) Ring mechanism, and plasma processing device using the ring mechanism
AU2002358315A1 (en) Plasma process apparatus
AU2002305113A1 (en) Open ring architectures for optical wdm networks
AU2002366086A1 (en) Ionic plasma deposition apparatus
EP1278083A3 (en) Optical switch
AU2002338574A1 (en) Compensation-data processing
AU2002210403A1 (en) Pregnancy-associated plasma protein-a2 (papp-a2)
AU3926901A (en) High frequency plasma source
AU2001244344A1 (en) Variable focus optical apparatus
AU2002316261A1 (en) Cmos process
AU2002223553A1 (en) An optical feedthrough
EP1091396A3 (en) Plasma processing method
AU2001290898A1 (en) Chamber for laser-based processing
AU2002224329A1 (en) Contact lens case
AU7405201A (en) Compact plasma reactor
AU2002220907A1 (en) Plasma reactor gas processing
AU2002228821A1 (en) Plasma treated porous film
AU2002355030A1 (en) Plasma processing system
AU2001274345A1 (en) Processing an object