AU2001289905A1 - Super low-power generator system for embedded applications - Google Patents

Super low-power generator system for embedded applications

Info

Publication number
AU2001289905A1
AU2001289905A1 AU2001289905A AU8990501A AU2001289905A1 AU 2001289905 A1 AU2001289905 A1 AU 2001289905A1 AU 2001289905 A AU2001289905 A AU 2001289905A AU 8990501 A AU8990501 A AU 8990501A AU 2001289905 A1 AU2001289905 A1 AU 2001289905A1
Authority
AU
Australia
Prior art keywords
power generator
generator system
super low
embedded applications
embedded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001289905A
Inventor
Richard Michael Parent
Matthew R. Wordeman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of AU2001289905A1 publication Critical patent/AU2001289905A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
AU2001289905A 2000-10-04 2001-09-21 Super low-power generator system for embedded applications Abandoned AU2001289905A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/679,124 US6343044B1 (en) 2000-10-04 2000-10-04 Super low-power generator system for embedded applications
US09/679,124 2000-10-04
PCT/EP2001/010937 WO2002029818A2 (en) 2000-10-04 2001-09-21 Super low-power generator system for embedded applications

Publications (1)

Publication Number Publication Date
AU2001289905A1 true AU2001289905A1 (en) 2002-04-15

Family

ID=24725656

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001289905A Abandoned AU2001289905A1 (en) 2000-10-04 2001-09-21 Super low-power generator system for embedded applications

Country Status (6)

Country Link
US (1) US6343044B1 (en)
KR (1) KR100570425B1 (en)
AU (1) AU2001289905A1 (en)
DE (1) DE10196673B4 (en)
TW (1) TW548660B (en)
WO (1) WO2002029818A2 (en)

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US6639826B2 (en) * 2000-12-31 2003-10-28 Texas Instruments Incorporated Memory cell operation using ramped wordlines
US7057866B2 (en) * 2001-08-14 2006-06-06 International Business Machines Corp. System and method for disconnecting a portion of an integrated circuit
US6909659B2 (en) * 2001-08-30 2005-06-21 Micron Technology, Inc. Zero power chip standby mode
JP2004178782A (en) * 2002-10-04 2004-06-24 Sharp Corp Semiconductor memory, control method for the same, and portable electronic apparatus
US6795366B2 (en) * 2002-10-15 2004-09-21 Samsung Electronics Co., Ltd. Internal voltage converter scheme for controlling the power-up slope of internal supply voltage
JP2005005642A (en) * 2003-06-16 2005-01-06 Nec Tokin Corp Chip type solid electrolytic capacitor and its manufacturing method
US7046572B2 (en) * 2003-06-16 2006-05-16 International Business Machines Corporation Low power manager for standby operation of memory system
US7009904B2 (en) * 2003-11-19 2006-03-07 Infineon Technologies Ag Back-bias voltage generator with temperature control
US7266031B2 (en) * 2003-11-19 2007-09-04 Infineon Technologies Ag Internal voltage generator with temperature control
KR100591759B1 (en) * 2003-12-03 2006-06-22 삼성전자주식회사 Power Supply of Semiconductor Memory
US7092309B2 (en) * 2004-04-30 2006-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Standby mode SRAM design for power reduction
US7348827B2 (en) * 2004-05-19 2008-03-25 Altera Corporation Apparatus and methods for adjusting performance of programmable logic devices
US7129745B2 (en) * 2004-05-19 2006-10-31 Altera Corporation Apparatus and methods for adjusting performance of integrated circuits
US20060119382A1 (en) * 2004-12-07 2006-06-08 Shumarayev Sergey Y Apparatus and methods for adjusting performance characteristics of programmable logic devices
KR100648280B1 (en) * 2005-01-04 2006-11-23 삼성전자주식회사 Semiconductor Memory Device and Method supplying word line voltage thereof
US7187612B2 (en) * 2005-04-29 2007-03-06 Infineon Technologies Ag Memory having power-up circuit
KR100727320B1 (en) * 2005-07-15 2007-06-12 삼성전자주식회사 Circuit and method of supplying power supply in semiconductor devices
KR100718037B1 (en) * 2005-09-13 2007-05-14 주식회사 하이닉스반도체 Circuit for Generating Substrate Bias Voltage of Semiconductor Memory Apparatus
US7313033B2 (en) * 2005-09-28 2007-12-25 Infineon Technologies Ag Random access memory including first and second voltage sources
US7330049B2 (en) * 2006-03-06 2008-02-12 Altera Corporation Adjustable transistor body bias generation circuitry with latch-up prevention
US7495471B2 (en) * 2006-03-06 2009-02-24 Altera Corporation Adjustable transistor body bias circuitry
US7355437B2 (en) * 2006-03-06 2008-04-08 Altera Corporation Latch-up prevention circuitry for integrated circuits with transistor body biasing
JP5034379B2 (en) 2006-08-30 2012-09-26 富士通セミコンダクター株式会社 Semiconductor memory and system
US7675317B2 (en) * 2007-09-14 2010-03-09 Altera Corporation Integrated circuits with adjustable body bias and power supply circuitry
US8174923B2 (en) * 2007-11-08 2012-05-08 Rambus Inc. Voltage-stepped low-power memory device
US8406075B2 (en) * 2009-04-03 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra-low leakage memory architecture
US8913051B2 (en) * 2009-06-30 2014-12-16 Silicon Laboratories Inc. LCD controller with oscillator prebias control
US9058761B2 (en) 2009-06-30 2015-06-16 Silicon Laboratories Inc. System and method for LCD loop control
US8120968B2 (en) * 2010-02-12 2012-02-21 International Business Machines Corporation High voltage word line driver
US8654589B2 (en) * 2010-11-30 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump control scheme for memory word line
KR20140024668A (en) 2012-08-20 2014-03-03 에스케이하이닉스 주식회사 Semiconductor memory device
US9117547B2 (en) 2013-05-06 2015-08-25 International Business Machines Corporation Reduced stress high voltage word line driver
US9088280B2 (en) 2013-10-30 2015-07-21 Freescale Semiconductor, Inc. Body bias control circuit
US20200090736A1 (en) * 2018-09-14 2020-03-19 Advanced Micro Devices, Inc. Power aware programmable negative bit line control

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961167A (en) * 1988-08-26 1990-10-02 Mitsubishi Denki Kabushiki Kaisha Substrate bias generator in a dynamic random access memory with auto/self refresh functions and a method of generating a substrate bias therein
JPH0817033B2 (en) 1988-12-08 1996-02-21 三菱電機株式会社 Substrate bias potential generation circuit
US5483152A (en) 1993-01-12 1996-01-09 United Memories, Inc. Wide range power supply for integrated circuits
US5337284A (en) 1993-01-11 1994-08-09 United Memories, Inc. High voltage generator having a self-timed clock circuit and charge pump, and a method therefor
TW306001B (en) * 1995-02-08 1997-05-21 Matsushita Electric Ind Co Ltd
JPH09134591A (en) * 1995-11-07 1997-05-20 Oki Micro Design Miyazaki:Kk Semiconductor memory device
KR100206604B1 (en) * 1996-06-29 1999-07-01 김영환 Semiconductor memory device
JPH10144879A (en) * 1996-11-06 1998-05-29 Toshiba Corp Word line driver circuit and semiconductor memory
KR100231602B1 (en) 1996-11-08 1999-11-15 김영환 Circuit of voltage generation complex mode type
JP2001126473A (en) * 1999-10-29 2001-05-11 Oki Electric Ind Co Ltd Memory circuit including word line reset circuit and method for resetting word line

Also Published As

Publication number Publication date
DE10196673B4 (en) 2008-01-31
US6343044B1 (en) 2002-01-29
TW548660B (en) 2003-08-21
KR100570425B1 (en) 2006-04-11
WO2002029818A2 (en) 2002-04-11
WO2002029818A3 (en) 2003-06-19
KR20030036860A (en) 2003-05-09
DE10196673T1 (en) 2003-08-28

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