AU2001288362A1 - Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges - Google Patents

Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges

Info

Publication number
AU2001288362A1
AU2001288362A1 AU2001288362A AU8836201A AU2001288362A1 AU 2001288362 A1 AU2001288362 A1 AU 2001288362A1 AU 2001288362 A AU2001288362 A AU 2001288362A AU 8836201 A AU8836201 A AU 8836201A AU 2001288362 A1 AU2001288362 A1 AU 2001288362A1
Authority
AU
Australia
Prior art keywords
ion
sychronized
discharges
modulated
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001288362A
Inventor
Sivananda K. Kanakasabapathy
Lawrence J. Overzet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOARD OF REGENTS
Original Assignee
University of Texas System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Texas System filed Critical University of Texas System
Publication of AU2001288362A1 publication Critical patent/AU2001288362A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
AU2001288362A 2000-08-29 2001-08-23 Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges Abandoned AU2001288362A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US22870500P 2000-08-29 2000-08-29
US60228705 2000-08-29
US09820244 2001-03-28
US09/820,244 US6875700B2 (en) 2000-08-29 2001-03-28 Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
PCT/US2001/026344 WO2002019395A1 (en) 2000-08-29 2001-08-23 Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges

Publications (1)

Publication Number Publication Date
AU2001288362A1 true AU2001288362A1 (en) 2002-03-13

Family

ID=26922585

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001288362A Abandoned AU2001288362A1 (en) 2000-08-29 2001-08-23 Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges

Country Status (4)

Country Link
US (1) US6875700B2 (en)
AU (1) AU2001288362A1 (en)
TW (1) TW514967B (en)
WO (1) WO2002019395A1 (en)

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US10340123B2 (en) * 2016-05-26 2019-07-02 Tokyo Electron Limited Multi-frequency power modulation for etching high aspect ratio features
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US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US10991554B2 (en) * 2017-11-16 2021-04-27 Tokyo Electron Limited Plasma processing system with synchronized signal modulation
JP7289313B2 (en) 2017-11-17 2023-06-09 エーイーエス グローバル ホールディングス， プライベート リミテッド Spatial and temporal control of ion bias voltage for plasma processing
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Also Published As

Publication number Publication date
WO2002019395A1 (en) 2002-03-07
TW514967B (en) 2002-12-21
US6875700B2 (en) 2005-04-05
US20020139658A1 (en) 2002-10-03

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