AU2001285019A1 - Phase-shift masks and methods of fabrication - Google Patents

Phase-shift masks and methods of fabrication

Info

Publication number
AU2001285019A1
AU2001285019A1 AU2001285019A AU8501901A AU2001285019A1 AU 2001285019 A1 AU2001285019 A1 AU 2001285019A1 AU 2001285019 A AU2001285019 A AU 2001285019A AU 8501901 A AU8501901 A AU 8501901A AU 2001285019 A1 AU2001285019 A1 AU 2001285019A1
Authority
AU
Australia
Prior art keywords
fabrication
phase
methods
shift masks
masks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001285019A
Inventor
Michael S. Jin
Sing H. Lee
James A. Reynolds
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gray Scale Technologies Inc
Original Assignee
Gray Scale Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gray Scale Technologies Inc filed Critical Gray Scale Technologies Inc
Publication of AU2001285019A1 publication Critical patent/AU2001285019A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
AU2001285019A 2000-09-07 2001-08-17 Phase-shift masks and methods of fabrication Abandoned AU2001285019A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23116200P 2000-09-07 2000-09-07
US60231162 2000-09-07
US09/804,590 US6524755B2 (en) 2000-09-07 2001-03-12 Phase-shift masks and methods of fabrication
US09804590 2001-03-12
PCT/US2001/025785 WO2002021218A1 (en) 2000-09-07 2001-08-17 Phase-shift masks and methods of fabrication

Publications (1)

Publication Number Publication Date
AU2001285019A1 true AU2001285019A1 (en) 2002-03-22

Family

ID=26924865

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001285019A Abandoned AU2001285019A1 (en) 2000-09-07 2001-08-17 Phase-shift masks and methods of fabrication

Country Status (4)

Country Link
US (1) US6524755B2 (en)
AU (1) AU2001285019A1 (en)
TW (1) TW521318B (en)
WO (1) WO2002021218A1 (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573030B1 (en) * 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
KR100620652B1 (en) * 2000-06-23 2006-09-13 주식회사 하이닉스반도체 A method for manufacturing phase shift mask of semiconductor device
US6599666B2 (en) * 2001-03-15 2003-07-29 Micron Technology, Inc. Multi-layer, attenuated phase-shifting mask
US7027226B2 (en) * 2001-09-17 2006-04-11 Euv Llc Diffractive optical element for extreme ultraviolet wavefront control
US20030052084A1 (en) * 2001-09-18 2003-03-20 Tabery Cyrus E. In-situ or ex-situ profile monitoring of phase openings on alternating phase shifting masks by scatterometry
US6541397B1 (en) * 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
KR100468735B1 (en) * 2002-06-12 2005-01-29 삼성전자주식회사 Method for manufacturing alternating phase shift mask
US6927178B2 (en) * 2002-07-11 2005-08-09 Applied Materials, Inc. Nitrogen-free dielectric anti-reflective coating and hardmask
US6832364B2 (en) * 2002-10-03 2004-12-14 International Business Machines Corporation Integrated lithographic layout optimization
US20050048375A1 (en) * 2003-08-27 2005-03-03 Cheng-Ming Lin Method of making an attenuated phase-shifting mask from a mask blank
US7288344B2 (en) * 2003-10-31 2007-10-30 Intel Corporation Accommodating diffraction in the printing of features on a substrate
US6969568B2 (en) * 2004-01-28 2005-11-29 Freescale Semiconductor, Inc. Method for etching a quartz layer in a photoresistless semiconductor mask
US7276316B2 (en) * 2004-02-02 2007-10-02 International Business Machines Corporation Common second level frame exposure methods for making embedded attenuated phase shift masks
US20060051681A1 (en) * 2004-09-08 2006-03-09 Phototronics, Inc. 15 Secor Road P.O. Box 5226 Brookfield, Conecticut Method of repairing a photomask having an internal etch stop layer
US7455883B2 (en) * 2004-10-19 2008-11-25 Guardian Industries Corp. Hydrophilic DLC on substrate with flame pyrolysis treatment
US7459095B2 (en) * 2004-10-21 2008-12-02 Corning Incorporated Opaque chrome coating suitable for etching
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
JP5165833B2 (en) * 2005-02-04 2013-03-21 信越化学工業株式会社 Photomask blank, photomask, and photomask blank manufacturing method
KR100844981B1 (en) 2006-12-14 2008-07-09 삼성전자주식회사 Phase shift mask and method of forming the same
US20080254233A1 (en) * 2007-04-10 2008-10-16 Kwangduk Douglas Lee Plasma-induced charge damage control for plasma enhanced chemical vapor deposition processes
US20090053620A1 (en) * 2007-08-24 2009-02-26 Hynix Semiconductor Inc. Blank Mask and Method for Fabricating Photomask Using the Same
WO2011046655A2 (en) * 2009-07-21 2011-04-21 Cornell University Transfer-free batch fabrication of single layer graphene devices
US8808788B2 (en) 2010-09-20 2014-08-19 Tokyo Electron Limited Processing a wafer with a post application bake (PAB) procedure
US8465885B2 (en) 2011-02-07 2013-06-18 International Business Machines Corporation Boundary layer formation and resultant structures
US8715890B2 (en) 2012-01-31 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor mask blanks with a compatible stop layer
CN103545211A (en) 2012-07-13 2014-01-29 中国科学院微电子研究所 Production method of semiconductor device
CN102976264B (en) * 2012-12-13 2015-04-15 中国科学院物理研究所 Method for preparing self-supporting multilayer micro nano structure
US9159561B2 (en) * 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
US9612534B2 (en) * 2015-03-31 2017-04-04 Tokyo Electron Limited Exposure dose homogenization through rotation, translation, and variable processing conditions
US10394114B2 (en) * 2016-08-25 2019-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Chromeless phase shift mask structure and process
DE102018116054B4 (en) * 2018-07-03 2022-02-17 Advanced Mask Technology Center Gmbh & Co. Kg Photomask and method of making a photomask
US10859905B2 (en) * 2018-09-18 2020-12-08 Taiwan Semiconductor Manufacturing Company Ltd. Photomask and method for forming the same
CN109062002A (en) * 2018-09-29 2018-12-21 深圳清溢光电股份有限公司 Dry etching prepares 6 generation LTPS PSM
CN110329985B (en) * 2019-06-18 2022-02-15 长沙新材料产业研究院有限公司 Diamond surface complex structure and preparation method thereof

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6007324A (en) 1977-10-23 1999-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Double layer method for fabricating a rim type attenuating phase shifting mask
US4526673A (en) 1982-09-24 1985-07-02 Spire Corporation Coating method
DE3421739A1 (en) 1984-06-12 1985-12-12 Battelle-Institut E.V., 6000 Frankfurt METHOD FOR PRODUCING DIAMOND-LIKE CARBON LAYERS
US4783361A (en) 1984-09-10 1988-11-08 Ovonic Synthetic Materials Company, Inc. Coated lenses
US4777090A (en) 1986-11-03 1988-10-11 Ovonic Synthetic Materials Company Coated article and method of manufacturing the article
US4890309A (en) 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
US4972250A (en) 1987-03-02 1990-11-20 Microwave Technology, Inc. Protective coating useful as passivation layer for semiconductor devices
US5171607A (en) 1990-01-29 1992-12-15 Bausch & Lomb Incorporated Method of depositing diamond-like carbon film onto a substrate having a low melting temperature
DE69132622T2 (en) 1990-09-21 2002-02-07 Dainippon Printing Co Ltd Process for manufacturing a phase shift photomask
US5455081A (en) 1990-09-25 1995-10-03 Nippon Steel Corporation Process for coating diamond-like carbon film and coated thin strip
US5527596A (en) 1990-09-27 1996-06-18 Diamonex, Incorporated Abrasion wear resistant coated substrate product
US5135808A (en) 1990-09-27 1992-08-04 Diamonex, Incorporated Abrasion wear resistant coated substrate product
US6132908A (en) 1990-10-26 2000-10-17 Nikon Corporation Photo mask and exposure method using the same
US5718976A (en) 1991-05-03 1998-02-17 Advanced Refractory Technologies, Inc. Erosion resistant diamond-like nanocomposite coatings for optical components
US5246801A (en) 1991-09-20 1993-09-21 At&T Bell Laboratories Method of repairing indentations in phase-shifting lithographic masks
JP3064769B2 (en) 1992-11-21 2000-07-12 アルバック成膜株式会社 PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK
US5470661A (en) 1993-01-07 1995-11-28 International Business Machines Corporation Diamond-like carbon films from a hydrocarbon helium plasma
US5411824A (en) 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
AU5681194A (en) 1993-01-21 1994-08-15 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
AU665480B2 (en) 1993-01-29 1996-01-04 Tokuyama Corporation Polymerizable composition, polymer, organic glass and ophthalmic lens
US5567550A (en) 1993-03-25 1996-10-22 Texas Instruments Incorporated Method of making a mask for making integrated circuits
US5532089A (en) 1993-12-23 1996-07-02 International Business Machines Corporation Simplified fabrication methods for rim phase-shift masks
US5470681A (en) 1993-12-23 1995-11-28 International Business Machines Corporation Phase shift mask using liquid phase oxide deposition
JP2878143B2 (en) 1994-02-22 1999-04-05 インターナショナル・ビジネス・マシーンズ・コーポレイション Thin film material for producing attenuated phase shift mask and method for producing the same
US5508368A (en) 1994-03-03 1996-04-16 Diamonex, Incorporated Ion beam process for deposition of highly abrasion-resistant coatings
US5888593A (en) 1994-03-03 1999-03-30 Monsanto Company Ion beam process for deposition of highly wear-resistant optical coatings
US5846649A (en) 1994-03-03 1998-12-08 Monsanto Company Highly durable and abrasion-resistant dielectric coatings for lenses
US5618619A (en) 1994-03-03 1997-04-08 Monsanto Company Highly abrasion-resistant, flexible coatings for soft substrates
US5391407A (en) 1994-03-18 1995-02-21 Southwest Research Institute Process for forming protective diamond-like carbon coatings on metallic surfaces
US5465859A (en) 1994-04-28 1995-11-14 International Business Machines Corporation Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique
JP3085570B2 (en) 1994-07-08 2000-09-11 株式会社トクヤマ Polymerizable composition
US5393572A (en) 1994-07-11 1995-02-28 Southwest Research Institute Ion beam assisted method of producing a diamond like carbon coating
US5477058A (en) 1994-11-09 1995-12-19 Kabushiki Kaisha Toshiba Attenuated phase-shifting mask with opaque reticle alignment marks
US5565286A (en) 1994-11-17 1996-10-15 International Business Machines Corporation Combined attenuated-alternating phase shifting mask structure and fabrication methods therefor
TW366367B (en) 1995-01-26 1999-08-11 Ibm Sputter deposition of hydrogenated amorphous carbon film
JPH08234410A (en) 1995-02-28 1996-09-13 Dainippon Printing Co Ltd Phase shift photomask and dry etching method for phase shift photomask
US5635315A (en) 1995-06-21 1997-06-03 Hoya Corporation Phase shift mask and phase shift mask blank
JP3820486B2 (en) 1995-09-18 2006-09-13 Ｈｏｙａ株式会社 Manufacturing method of glass optical element
US5780119A (en) 1996-03-20 1998-07-14 Southwest Research Institute Treatments to reduce friction and wear on metal alloy components
US5897976A (en) 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
US5858477A (en) 1996-12-10 1999-01-12 Akashic Memories Corporation Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon
US5869212A (en) 1996-05-31 1999-02-09 Kabushiki Kaisha Toshiba Integrated circuit photofabrication masks and methods for making same
US5914202A (en) 1996-06-10 1999-06-22 Sharp Microeletronics Technology, Inc. Method for forming a multi-level reticle
DE69736790T2 (en) 1996-06-27 2007-08-16 Nissin Electric Co., Ltd. Carbon film coated article and method of making the same
KR980010610A (en) 1996-07-31 1998-04-30 문정환 Structure and manufacturing method of phase inversion mask
KR100195333B1 (en) 1996-09-02 1999-06-15 구본준 Phase shift mask and its manufacturing method
US5935735A (en) 1996-10-24 1999-08-10 Toppan Printing Co., Ltd. Halftone phase shift mask, blank for the same, and methods of manufacturing these
KR100244285B1 (en) 1996-11-04 2000-02-01 김영환 Phase shifting mask and method for fabrication
US5851704A (en) 1996-12-09 1998-12-22 Micron Technology, Inc. Method and apparatus for the fabrication of semiconductor photomask
US6107000A (en) 1996-12-17 2000-08-22 Board Of Regents - University Of California - San Diego Method for producing micro-optic elements with gray scale mask
US6086796A (en) 1997-07-02 2000-07-11 Diamonex, Incorporated Diamond-like carbon over-coats for optical recording media devices and method thereof
US6086962A (en) 1997-07-25 2000-07-11 Diamonex, Incorporated Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source
US5973447A (en) 1997-07-25 1999-10-26 Monsanto Company Gridless ion source for the vacuum processing of materials
US6030904A (en) 1997-08-21 2000-02-29 International Business Machines Corporation Stabilization of low-k carbon-based dielectrics
US6027837A (en) 1997-10-14 2000-02-22 International Business Machines Corporation Method for tuning an attenuating phase shift mask
US5853923A (en) 1997-10-23 1998-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Double layer method for fabricating a rim type attenuating phase shifting mask
US5932377A (en) 1998-02-24 1999-08-03 International Business Machines Corporation Exact transmission balanced alternating phase-shifting mask for photolithography
US5939227A (en) 1998-03-09 1999-08-17 Rochester Institute Of Technology Multi-layered attenuated phase shift mask and a method for making the mask
US6156394A (en) 1998-04-17 2000-12-05 Optical Coating Laboratory, Inc. Polymeric optical substrate method of treatment
TW352421B (en) 1998-04-27 1999-02-11 United Microelectronics Corp Method and process of phase shifting mask
USH1924H (en) 1998-09-15 2000-12-05 The United States Of America As Represented By The Secretary Of The Air Force Load-adaptive nanocrystalline carbon/amorphous diamond-like carbon composite and preparation method
US6348395B1 (en) * 2000-06-07 2002-02-19 International Business Machines Corporation Diamond as a polish-stop layer for chemical-mechanical planarization in a damascene process flow

Also Published As

Publication number Publication date
TW521318B (en) 2003-02-21
US6524755B2 (en) 2003-02-25
US20020028392A1 (en) 2002-03-07
WO2002021218A1 (en) 2002-03-14

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