AU2001282332A1 - System and method for controlling movement of a workpiece in a thermal processing system - Google Patents
System and method for controlling movement of a workpiece in a thermal processing systemInfo
- Publication number
- AU2001282332A1 AU2001282332A1 AU2001282332A AU8233201A AU2001282332A1 AU 2001282332 A1 AU2001282332 A1 AU 2001282332A1 AU 2001282332 A AU2001282332 A AU 2001282332A AU 8233201 A AU8233201 A AU 8233201A AU 2001282332 A1 AU2001282332 A1 AU 2001282332A1
- Authority
- AU
- Australia
- Prior art keywords
- workpiece
- thermal processing
- controlling movement
- processing system
- controlling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Radiation Pyrometers (AREA)
- Automatic Control Of Machine Tools (AREA)
- Control Of Temperature (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09670712 | 2000-09-27 | ||
US09/670,712 US6610968B1 (en) | 2000-09-27 | 2000-09-27 | System and method for controlling movement of a workpiece in a thermal processing system |
PCT/GB2001/003806 WO2002027059A2 (en) | 2000-09-27 | 2001-08-24 | System and method for controlling movement of a workpiece in a thermal processing system |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001282332A1 true AU2001282332A1 (en) | 2002-04-08 |
Family
ID=24691545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001282332A Abandoned AU2001282332A1 (en) | 2000-09-27 | 2001-08-24 | System and method for controlling movement of a workpiece in a thermal processing system |
Country Status (8)
Country | Link |
---|---|
US (1) | US6610968B1 (en) |
EP (1) | EP1322901A2 (en) |
JP (1) | JP2004510338A (en) |
KR (1) | KR100914791B1 (en) |
CN (1) | CN100467988C (en) |
AU (1) | AU2001282332A1 (en) |
TW (1) | TW501172B (en) |
WO (1) | WO2002027059A2 (en) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL1018086C2 (en) * | 2001-05-16 | 2002-11-26 | Asm Int | Method and device for the thermal treatment of substrates. |
US20060190211A1 (en) * | 2001-07-23 | 2006-08-24 | Schietinger Charles W | In-situ wafer parameter measurement method employing a hot susceptor as radiation source for reflectance measurement |
US20030036877A1 (en) * | 2001-07-23 | 2003-02-20 | Schietinger Charles W. | In-situ wafer parameter measurement method employing a hot susceptor as a reflected light source |
JP4731755B2 (en) * | 2001-07-26 | 2011-07-27 | 東京エレクトロン株式会社 | Transfer device control method, heat treatment method, and heat treatment device |
US6998580B2 (en) * | 2002-03-28 | 2006-02-14 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
JP4226855B2 (en) * | 2002-07-31 | 2009-02-18 | パナソニック株式会社 | Thermal analysis method, thermal analysis apparatus, and program for executing the thermal analysis method |
US9627244B2 (en) | 2002-12-20 | 2017-04-18 | Mattson Technology, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
US7619184B2 (en) * | 2003-03-04 | 2009-11-17 | Micron Technology, Inc. | Multi-parameter process and control method |
DE10328660B3 (en) * | 2003-06-26 | 2004-12-02 | Infineon Technologies Ag | Determining temperature of semiconductor wafer at instant of contact with sensor, records varying sensor output over time, to deduce initial wafer temperature |
US7026581B2 (en) * | 2003-08-22 | 2006-04-11 | Axcelis Technologies, Inc. | Apparatus for positioning an elevator tube |
US6855916B1 (en) | 2003-12-10 | 2005-02-15 | Axcelis Technologies, Inc. | Wafer temperature trajectory control method for high temperature ramp rate applications using dynamic predictive thermal modeling |
JP4403945B2 (en) * | 2003-12-19 | 2010-01-27 | 株式会社デンソー | Inspection method, inspection apparatus and inspection program for control program |
US7205231B2 (en) * | 2004-10-29 | 2007-04-17 | Axcelis Technologies, Inc. | Method for in-situ uniformity optimization in a rapid thermal processing system |
US7493242B1 (en) * | 2004-11-10 | 2009-02-17 | The United States Of America As Represented By The Secretary Of The Navy | Mathematical model for predicting the thermal behavior of an item |
WO2006098443A1 (en) * | 2005-03-17 | 2006-09-21 | Hamamatsu Photonics K.K. | Microscopic image capturing device |
US7402778B2 (en) * | 2005-04-29 | 2008-07-22 | Asm Assembly Automation Ltd. | Oven for controlled heating of compounds at varying temperatures |
US7802917B2 (en) * | 2005-08-05 | 2010-09-28 | Lam Research Corporation | Method and apparatus for chuck thermal calibration |
DE602005015220D1 (en) * | 2005-09-16 | 2009-08-13 | Mettler Toledo Ag | Method for simulating a process on a laboratory scale |
US7184657B1 (en) | 2005-09-17 | 2007-02-27 | Mattson Technology, Inc. | Enhanced rapid thermal processing apparatus and method |
US7473032B2 (en) * | 2006-06-30 | 2009-01-06 | Honeywell International Inc. | System and method for enabling temperature measurement using a pyrometer and pyrometer target for use with same |
JP5967859B2 (en) | 2006-11-15 | 2016-08-10 | マトソン テクノロジー、インコーポレイテッド | System and method for supporting a workpiece during heat treatment |
US8388223B2 (en) * | 2007-08-09 | 2013-03-05 | The Edward Orton Jr. Ceramic Foundation | Furnace temperature monitoring device and method |
US9070590B2 (en) | 2008-05-16 | 2015-06-30 | Mattson Technology, Inc. | Workpiece breakage prevention method and apparatus |
EP2498276A4 (en) * | 2009-11-02 | 2013-07-24 | Lig Adp Co Ltd | Temperature control method of chemical vapor deposition device |
KR101551498B1 (en) | 2009-12-03 | 2015-09-09 | (주) 유로비젼레이저 | Apparatus for heat treating metal surface with laser in vacuum chamber |
DE102010016477A1 (en) * | 2010-04-16 | 2011-10-20 | Aixtron Ag | A thermal treatment method comprising a heating step, a treatment step and a cooling step |
JP6091932B2 (en) * | 2012-03-22 | 2017-03-08 | 株式会社ニューフレアテクノロジー | Silicon carbide film forming apparatus and silicon carbide film forming method |
CN103697712A (en) * | 2012-09-27 | 2014-04-02 | 上海梅山钢铁股份有限公司 | Method for dynamically controlling furnace temperature of heating furnace based on time sensitivity |
TWI506702B (en) | 2014-07-28 | 2015-11-01 | Powerchip Technology Corp | Dispatch control method for furnace process |
US10401823B2 (en) * | 2016-02-04 | 2019-09-03 | Makino Inc. | Real time machining process monitoring utilizing preprocess simulation |
CN107940997A (en) * | 2016-10-12 | 2018-04-20 | 石嘴山市鸿裕电子科技有限公司 | The fixed point placement of car type furnace workpiece uniformly ranks Coordination module |
US10310013B2 (en) | 2016-12-12 | 2019-06-04 | Samsung Electronics Co., Ltd. | Test mode isolation and power reduction in embedded core-based digital systems of integrated circuits (ICs) with multiple power domains |
CN108089609A (en) * | 2017-12-14 | 2018-05-29 | 洛阳用功感应加热设备有限公司 | A kind of induction heating power dynamic tracking linear velocity temprature control method |
CN110863102B (en) * | 2019-10-29 | 2022-02-22 | 首钢京唐钢铁联合有限责任公司 | Method and device for correcting thermocouple value of heating section of annealing furnace |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2872173A (en) * | 1949-12-12 | 1959-02-03 | Munker Theo | Method and apparatus for heat treating materials in a continuous operating furance |
US4120582A (en) | 1976-10-27 | 1978-10-17 | Donnelly Mirrors, Inc. | Light reflectivity and transmission testing apparatus and method |
US4647774A (en) | 1985-03-04 | 1987-03-03 | Quantum Logic Corporation | Pyrometer #2 |
US4647775A (en) | 1985-03-04 | 1987-03-03 | Quantum Logic Corporation | Pyrometer 1 |
DD254114A3 (en) | 1985-07-30 | 1988-02-17 | Univ Dresden Tech | PYROMETRIC MEASURING PROCEDURE |
US4708493A (en) | 1986-05-19 | 1987-11-24 | Quantum Logic Corporation | Apparatus for remote measurement of temperatures |
US4919542A (en) | 1988-04-27 | 1990-04-24 | Ag Processing Technologies, Inc. | Emissivity correction apparatus and method |
US4956538A (en) | 1988-09-09 | 1990-09-11 | Texas Instruments, Incorporated | Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors |
NL8900003A (en) * | 1989-01-02 | 1990-08-01 | Imec Inter Uni Micro Electr | DEVICE AND METHOD FOR TREATING ONE OR MORE SLICES OF MATERIAL |
JPH02298829A (en) * | 1989-05-15 | 1990-12-11 | Fuji Electric Co Ltd | Heat treatment apparatus |
DE3916181A1 (en) * | 1989-05-18 | 1990-11-22 | Mahler Dienstleistung | Tunnel oven with pyrometers for workpiece heat treatment - has self-adjusting temp. gradient maintained by process computer across heating zone followed by cooling tunnel |
KR0155158B1 (en) * | 1989-07-25 | 1998-12-01 | 카자마 젠쥬 | Vertical wafer treatment apparatus and the method |
US5282017A (en) | 1990-01-05 | 1994-01-25 | Quantum Logic Corporation | Reflectance probe |
US5154512A (en) | 1990-04-10 | 1992-10-13 | Luxtron Corporation | Non-contact techniques for measuring temperature or radiation-heated objects |
US5310260A (en) | 1990-04-10 | 1994-05-10 | Luxtron Corporation | Non-contact optical techniques for measuring surface conditions |
JPH0448724A (en) * | 1990-06-15 | 1992-02-18 | Hitachi Ltd | Semiconductor heat treatment device |
US5387265A (en) * | 1991-10-29 | 1995-02-07 | Kokusai Electric Co., Ltd. | Semiconductor wafer reaction furnace with wafer transfer means |
US5308161A (en) | 1993-02-11 | 1994-05-03 | Quantum Logic Corporation | Pyrometer apparatus for use in rapid thermal processing of semiconductor wafers |
US5571010A (en) * | 1993-06-18 | 1996-11-05 | Tokyo Electron Kabushiki Kaisha | Heat treatment method and apparatus |
JPH07147257A (en) * | 1993-09-30 | 1995-06-06 | Tokyo Electron Ltd | Heat treatment method and device therefor |
US5650082A (en) * | 1993-10-29 | 1997-07-22 | Applied Materials, Inc. | Profiled substrate heating |
JPH07254545A (en) * | 1994-03-15 | 1995-10-03 | Oki Electric Ind Co Ltd | Heat treatment method for semiconductor substrate and device therefor |
JPH07273100A (en) * | 1994-03-31 | 1995-10-20 | Toshiba Corp | Method and apparatus for heat-treatment of semiconductor device |
US5597237A (en) | 1995-05-30 | 1997-01-28 | Quantum Logic Corp | Apparatus for measuring the emissivity of a semiconductor wafer |
US5704712A (en) | 1996-01-18 | 1998-01-06 | Quantum Logic Corporation | Method for remotely measuring temperatures which utilizes a two wavelength radiometer and a computer |
US5820366A (en) | 1996-07-10 | 1998-10-13 | Eaton Corporation | Dual vertical thermal processing furnace |
JPH10335340A (en) * | 1997-05-30 | 1998-12-18 | Kokusai Electric Co Ltd | Temp. controller for semiconductor manufacturing apparatus |
US5900177A (en) * | 1997-06-11 | 1999-05-04 | Eaton Corporation | Furnace sidewall temperature control system |
KR100405909B1 (en) * | 1998-07-01 | 2003-11-14 | 포톤 다이나믹스, 인코포레이티드 | A rapid thermal system for large area |
US6303411B1 (en) * | 1999-05-03 | 2001-10-16 | Vortek Industries Ltd. | Spatially resolved temperature measurement and irradiance control |
US6407368B1 (en) * | 2001-07-12 | 2002-06-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | System for maintaining a flat zone temperature profile in LP vertical furnace |
-
2000
- 2000-09-27 US US09/670,712 patent/US6610968B1/en not_active Expired - Fee Related
-
2001
- 2001-08-20 TW TW090120360A patent/TW501172B/en active
- 2001-08-24 WO PCT/GB2001/003806 patent/WO2002027059A2/en not_active Application Discontinuation
- 2001-08-24 CN CNB018164137A patent/CN100467988C/en not_active Expired - Fee Related
- 2001-08-24 JP JP2002530819A patent/JP2004510338A/en active Pending
- 2001-08-24 EP EP01960945A patent/EP1322901A2/en not_active Withdrawn
- 2001-08-24 KR KR1020037004625A patent/KR100914791B1/en not_active IP Right Cessation
- 2001-08-24 AU AU2001282332A patent/AU2001282332A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US6610968B1 (en) | 2003-08-26 |
WO2002027059A3 (en) | 2002-06-06 |
KR100914791B1 (en) | 2009-09-02 |
EP1322901A2 (en) | 2003-07-02 |
CN100467988C (en) | 2009-03-11 |
WO2002027059A2 (en) | 2002-04-04 |
CN1466670A (en) | 2004-01-07 |
JP2004510338A (en) | 2004-04-02 |
KR20030040511A (en) | 2003-05-22 |
TW501172B (en) | 2002-09-01 |
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