AU2001281139A1 - Methods for reducing the curvature in boron-doped silicon micromachined structures - Google Patents

Methods for reducing the curvature in boron-doped silicon micromachined structures

Info

Publication number
AU2001281139A1
AU2001281139A1 AU2001281139A AU8113901A AU2001281139A1 AU 2001281139 A1 AU2001281139 A1 AU 2001281139A1 AU 2001281139 A AU2001281139 A AU 2001281139A AU 8113901 A AU8113901 A AU 8113901A AU 2001281139 A1 AU2001281139 A1 AU 2001281139A1
Authority
AU
Australia
Prior art keywords
boron
curvature
reducing
methods
doped silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001281139A
Inventor
Cleopatra Cabuz
Francis M. Erdmann
Max C. Glenn
Robert D. Horning
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of AU2001281139A1 publication Critical patent/AU2001281139A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00365—Creating layers of material on a substrate having low tensile stress between layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0164—Controlling internal stress of deposited layers by doping the layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2001281139A 2000-08-08 2001-08-07 Methods for reducing the curvature in boron-doped silicon micromachined structures Abandoned AU2001281139A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/634,932 2000-08-08
US09/634,932 US6544655B1 (en) 2000-08-08 2000-08-08 Methods for reducing the curvature in boron-doped silicon micromachined structures
PCT/US2001/024723 WO2002012115A2 (en) 2000-08-08 2001-08-07 Methods for reducing the curvature in boron-doped silicon micromachined structures

Publications (1)

Publication Number Publication Date
AU2001281139A1 true AU2001281139A1 (en) 2002-02-18

Family

ID=24545733

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001281139A Abandoned AU2001281139A1 (en) 2000-08-08 2001-08-07 Methods for reducing the curvature in boron-doped silicon micromachined structures

Country Status (6)

Country Link
US (3) US6544655B1 (en)
EP (1) EP1307904A2 (en)
JP (1) JP2004519335A (en)
KR (2) KR20070117679A (en)
AU (1) AU2001281139A1 (en)
WO (1) WO2002012115A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7008193B2 (en) * 2002-05-13 2006-03-07 The Regents Of The University Of Michigan Micropump assembly for a microgas chromatograph and the like
US6770504B2 (en) * 2003-01-06 2004-08-03 Honeywell International Inc. Methods and structure for improving wafer bow control
US7012322B2 (en) * 2003-12-22 2006-03-14 Honeywell International Inc. Method for reducing harmonic distortion in comb drive devices
US7036373B2 (en) 2004-06-29 2006-05-02 Honeywell International, Inc. MEMS gyroscope with horizontally oriented drive electrodes
US7867779B2 (en) 2005-02-03 2011-01-11 Air Products And Chemicals, Inc. System and method comprising same for measurement and/or analysis of particles in gas stream
US7258010B2 (en) * 2005-03-09 2007-08-21 Honeywell International Inc. MEMS device with thinned comb fingers
US7678648B2 (en) 2006-07-14 2010-03-16 Micron Technology, Inc. Subresolution silicon features and methods for forming the same
US7563720B2 (en) * 2007-07-23 2009-07-21 Honeywell International Inc. Boron doped shell for MEMS device
US8163584B2 (en) 2008-04-11 2012-04-24 International Business Machines Corporation Method of minimizing beam bending of MEMS device by reducing the interfacial bonding strength between sacrificial layer and MEMS structure
US8187902B2 (en) * 2008-07-09 2012-05-29 The Charles Stark Draper Laboratory, Inc. High performance sensors and methods for forming the same
US9837259B2 (en) 2014-08-29 2017-12-05 Sunpower Corporation Sequential etching treatment for solar cell fabrication
US9601624B2 (en) 2014-12-30 2017-03-21 Globalfoundries Inc SOI based FINFET with strained source-drain regions

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922705A (en) * 1973-06-04 1975-11-25 Gen Electric Dielectrically isolated integral silicon diaphram or other semiconductor product
JPS5349953A (en) 1976-10-18 1978-05-06 Hitachi Ltd Soft x-ray transcription mask
DE2838928A1 (en) * 1978-09-07 1980-03-20 Ibm Deutschland METHOD FOR DOPING SILICON BODIES WITH BOR
US4372803A (en) 1980-09-26 1983-02-08 The United States Of America As Represented By The Secretary Of The Navy Method for etch thinning silicon devices
US4604636A (en) * 1983-05-11 1986-08-05 Chronar Corp. Microcrystalline semiconductor method and devices
US4543457A (en) * 1984-01-25 1985-09-24 Transensory Devices, Inc. Microminiature force-sensitive switch
JP3181357B2 (en) * 1991-08-19 2001-07-03 株式会社東芝 Method for forming semiconductor thin film and method for manufacturing semiconductor device
JPH05299348A (en) 1992-02-20 1993-11-12 Nec Corp Forming method for polysrystalline silicon thin film
US5344524A (en) 1993-06-30 1994-09-06 Honeywell Inc. SOI substrate fabrication
US5668045A (en) * 1994-11-30 1997-09-16 Sibond, L.L.C. Process for stripping outer edge of BESOI wafers
EP0717435A1 (en) * 1994-12-01 1996-06-19 AT&T Corp. Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby
US6017773A (en) * 1997-04-04 2000-01-25 University Of Rochester Stabilizing process for porous silicon and resulting light emitting device
US6177323B1 (en) * 1998-03-02 2001-01-23 Texas Instruments - Acer Incorporated Method to form MOSFET with an elevated source/drain for PMOSFET
JP2000206675A (en) * 1999-01-12 2000-07-28 Nikon Corp Blank for transfer mask and transfer mask

Also Published As

Publication number Publication date
KR20030067658A (en) 2003-08-14
KR20070117679A (en) 2007-12-12
US20030129845A1 (en) 2003-07-10
US20030138588A1 (en) 2003-07-24
WO2002012115A2 (en) 2002-02-14
US6969425B2 (en) 2005-11-29
WO2002012115A3 (en) 2003-01-09
JP2004519335A (en) 2004-07-02
EP1307904A2 (en) 2003-05-07
US6544655B1 (en) 2003-04-08
US6946200B2 (en) 2005-09-20

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