AU2001278191A1 - Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby - Google Patents
Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed therebyInfo
- Publication number
- AU2001278191A1 AU2001278191A1 AU2001278191A AU7819101A AU2001278191A1 AU 2001278191 A1 AU2001278191 A1 AU 2001278191A1 AU 2001278191 A AU2001278191 A AU 2001278191A AU 7819101 A AU7819101 A AU 7819101A AU 2001278191 A1 AU2001278191 A1 AU 2001278191A1
- Authority
- AU
- Australia
- Prior art keywords
- etchant
- silicon dioxide
- silicon nitride
- selectivity
- c2hxfy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 12
- 235000012239 silicon dioxide Nutrition 0.000 title abstract 5
- 239000000377 silicon dioxide Substances 0.000 title abstract 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
An etchant including C2HxFy, where x is an integer from two to five, inclusive, where y is an integer from one to four, inclusive, and where x plus y equals six. The etchant etches doped silicon dioxide with selectivity over both undoped silicon dioxide and silicon nitride. Thus, undoped silicon dioxide and silicon nitride may be employed as etch stops in dry etch processes which utilize the C2HxFy-containing etchant. C2HxFy may be employed as either a primary etchant or as an additive to another etchant or etchant mixture. Semiconductor devices (10) that include structures that have been patterned with an etchant of the present invention or in accordance with the method of the present invention are also disclosed. Specifically, the present invention includes semiconductor devices (10) including doped silicon oxide structures (24) with substantially vertical sidewalls (34) and adjacent undoped silicon oxide or silicon nitride structures (36) exposed adjacent the sidewall (34).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61004900A | 2000-07-05 | 2000-07-05 | |
US09610049 | 2000-07-05 | ||
PCT/US2001/041275 WO2002003439A2 (en) | 2000-07-05 | 2001-07-05 | Process for selectively etching doped silicon dioxide over undoped silicon dioxide and silicon nitride |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001278191A1 true AU2001278191A1 (en) | 2002-01-14 |
Family
ID=24443420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001278191A Abandoned AU2001278191A1 (en) | 2000-07-05 | 2001-07-05 | Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1297564B1 (en) |
JP (1) | JP2004503082A (en) |
KR (1) | KR100750081B1 (en) |
CN (1) | CN1211841C (en) |
AT (1) | ATE408896T1 (en) |
AU (1) | AU2001278191A1 (en) |
DE (1) | DE60135844D1 (en) |
WO (1) | WO2002003439A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10311691A1 (en) * | 2003-03-17 | 2004-10-07 | Infineon Technologies Ag | Method for preparation of a semiconductor structure by provision of Si nitride layer and Si dioxide layers useful for etching of Si dioxide layers with higher selectivity than Si nitride layers |
US8778804B2 (en) * | 2009-01-30 | 2014-07-15 | Fei Company | High selectivity, low damage electron-beam delineation etch |
CN102945892B (en) * | 2012-11-07 | 2015-08-05 | 南通大学 | A kind of method for manufacturing solar battery |
US10217681B1 (en) | 2014-08-06 | 2019-02-26 | American Air Liquide, Inc. | Gases for low damage selective silicon nitride etching |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3420347A1 (en) * | 1983-06-01 | 1984-12-06 | Hitachi, Ltd., Tokio/Tokyo | GAS AND METHOD FOR SELECTIVE ETCHING OF SILICON NITRIDE |
JPS61251138A (en) * | 1985-04-30 | 1986-11-08 | Matsushita Electric Ind Co Ltd | Dry etching |
US5562801A (en) * | 1994-04-28 | 1996-10-08 | Cypress Semiconductor Corporation | Method of etching an oxide layer |
US6066555A (en) * | 1995-12-22 | 2000-05-23 | Cypress Semiconductor Corporation | Method for eliminating lateral spacer erosion on enclosed contact topographies during RF sputter cleaning |
US5814563A (en) * | 1996-04-29 | 1998-09-29 | Applied Materials, Inc. | Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas |
US6849557B1 (en) * | 1997-04-30 | 2005-02-01 | Micron Technology, Inc. | Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide |
US6018184A (en) * | 1998-01-22 | 2000-01-25 | Micron Technology, Inc. | Semiconductor structure useful in a self-aligned contact having multiple insulation layers of non-uniform thickness |
US6117791A (en) * | 1998-06-22 | 2000-09-12 | Micron Technology, Inc. | Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby |
-
2001
- 2001-07-05 CN CNB01812321XA patent/CN1211841C/en not_active Expired - Lifetime
- 2001-07-05 AU AU2001278191A patent/AU2001278191A1/en not_active Abandoned
- 2001-07-05 EP EP01956164A patent/EP1297564B1/en not_active Expired - Lifetime
- 2001-07-05 KR KR1020037000043A patent/KR100750081B1/en active IP Right Grant
- 2001-07-05 DE DE60135844T patent/DE60135844D1/en not_active Expired - Lifetime
- 2001-07-05 AT AT01956164T patent/ATE408896T1/en not_active IP Right Cessation
- 2001-07-05 WO PCT/US2001/041275 patent/WO2002003439A2/en active Application Filing
- 2001-07-05 JP JP2002507425A patent/JP2004503082A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
ATE408896T1 (en) | 2008-10-15 |
CN1211841C (en) | 2005-07-20 |
CN1451176A (en) | 2003-10-22 |
WO2002003439A8 (en) | 2002-07-04 |
JP2004503082A (en) | 2004-01-29 |
KR100750081B1 (en) | 2007-08-21 |
KR20030038651A (en) | 2003-05-16 |
WO2002003439A2 (en) | 2002-01-10 |
EP1297564A2 (en) | 2003-04-02 |
DE60135844D1 (en) | 2008-10-30 |
EP1297564B1 (en) | 2008-09-17 |
WO2002003439A3 (en) | 2002-06-06 |
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