AU2001276743A1 - Method for producing crystal thin plate and solar cell comprising crystal thin plate - Google Patents

Method for producing crystal thin plate and solar cell comprising crystal thin plate

Info

Publication number
AU2001276743A1
AU2001276743A1 AU2001276743A AU7674301A AU2001276743A1 AU 2001276743 A1 AU2001276743 A1 AU 2001276743A1 AU 2001276743 A AU2001276743 A AU 2001276743A AU 7674301 A AU7674301 A AU 7674301A AU 2001276743 A1 AU2001276743 A1 AU 2001276743A1
Authority
AU
Australia
Prior art keywords
thin plate
crystal thin
solar cell
producing
producing crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001276743A
Inventor
Shuji Goma
Hiroshi Taniguti
Yoshihiro Tsukuda
Kohzaburoh Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of AU2001276743A1 publication Critical patent/AU2001276743A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AU2001276743A 2000-09-19 2001-08-06 Method for producing crystal thin plate and solar cell comprising crystal thin plate Abandoned AU2001276743A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000283036A JP2002094098A (en) 2000-09-19 2000-09-19 Manufacturing method of crystal thin plate and solar cell using the crystal thin plate
JP2000-283036 2000-09-19
PCT/JP2001/006760 WO2002024982A1 (en) 2000-09-19 2001-08-06 Method for producing crystal thin plate and solar cell comprising crystal thin plate

Publications (1)

Publication Number Publication Date
AU2001276743A1 true AU2001276743A1 (en) 2002-04-02

Family

ID=18767454

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001276743A Abandoned AU2001276743A1 (en) 2000-09-19 2001-08-06 Method for producing crystal thin plate and solar cell comprising crystal thin plate

Country Status (8)

Country Link
US (1) US20040053433A1 (en)
EP (1) EP1333111A4 (en)
JP (1) JP2002094098A (en)
KR (1) KR100553659B1 (en)
CN (1) CN1296527C (en)
AU (1) AU2001276743A1 (en)
TW (1) TW557585B (en)
WO (1) WO2002024982A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003017346A1 (en) * 2001-08-09 2003-02-27 Sharp Kabushiki Kaisha Sheet manufacturing device, sheet manufacturing method, and solar battery
JP4113532B2 (en) * 2002-06-28 2008-07-09 シャープ株式会社 Thin plate manufacturing method and thin plate manufacturing apparatus
KR100990513B1 (en) * 2008-07-10 2010-10-29 주식회사 도시환경이엔지 Solarcell wafer manufacturing device and method
CN101684568B (en) * 2008-09-26 2012-07-18 中国砂轮企业股份有限公司 Epitaxy method
CN102005505B (en) * 2010-10-18 2012-04-04 浙江大学 Tin-doped crystalline silicon solar cell for inhibiting light attenuation and preparation method thereof
ES2864962T3 (en) * 2014-04-30 2021-10-14 1366 Tech Inc Processes and apparatus for making thin semiconductor wafers with locally controlled regions that are relatively thicker than other regions

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4084985A (en) * 1977-04-25 1978-04-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for producing solar energy panels by automation
JPS61275119A (en) * 1985-05-28 1986-12-05 Kawasaki Steel Corp Production of silicon ribbon
JPS6279616A (en) * 1985-10-02 1987-04-13 Tdk Corp Manufacture of silicon film
US5454424A (en) * 1991-12-18 1995-10-03 Nobuyuki Mori Method of and apparatus for casting crystalline silicon ingot by electron bean melting
JPH0696443B2 (en) * 1992-07-17 1994-11-30 大同ほくさん株式会社 Casting method for polycrystalline objects such as silicon
JP2611751B2 (en) * 1995-04-07 1997-05-21 日本電気株式会社 Field-effect transistor
CN2220684Y (en) * 1995-08-22 1996-02-21 周帅先 Weak light type amorphous silicon solar energy battery
JPH09110591A (en) * 1995-10-09 1997-04-28 Shin Etsu Chem Co Ltd Production of plate-like silicon crystal and solar battery
JP3437034B2 (en) * 1996-07-17 2003-08-18 シャープ株式会社 Apparatus and method for manufacturing silicon ribbon
JP3616785B2 (en) * 1996-09-19 2005-02-02 キヤノン株式会社 Manufacturing method of solar cell
JPH11260721A (en) * 1998-03-13 1999-09-24 Toshiba Corp Forming method for polycrystal thin film silicon layer and photovoltaic power generating
JP4121697B2 (en) * 1999-12-27 2008-07-23 シャープ株式会社 Crystal sheet manufacturing method and manufacturing apparatus thereof

Also Published As

Publication number Publication date
EP1333111A4 (en) 2009-01-21
CN1461359A (en) 2003-12-10
JP2002094098A (en) 2002-03-29
CN1296527C (en) 2007-01-24
KR20030034190A (en) 2003-05-01
WO2002024982A1 (en) 2002-03-28
TW557585B (en) 2003-10-11
EP1333111A1 (en) 2003-08-06
KR100553659B1 (en) 2006-02-24
US20040053433A1 (en) 2004-03-18

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