AU2001269523A1 - Holding device for treated body - Google Patents

Holding device for treated body

Info

Publication number
AU2001269523A1
AU2001269523A1 AU2001269523A AU6952301A AU2001269523A1 AU 2001269523 A1 AU2001269523 A1 AU 2001269523A1 AU 2001269523 A AU2001269523 A AU 2001269523A AU 6952301 A AU6952301 A AU 6952301A AU 2001269523 A1 AU2001269523 A1 AU 2001269523A1
Authority
AU
Australia
Prior art keywords
holding device
treated body
treated
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001269523A
Inventor
Shinji Himori
Akira Koshiishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001269523A1 publication Critical patent/AU2001269523A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/90—Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Jigs For Machine Tools (AREA)
AU2001269523A 2000-07-17 2001-07-13 Holding device for treated body Abandoned AU2001269523A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-216552 2000-07-17
JP2000216552A JP4559595B2 (en) 2000-07-17 2000-07-17 Apparatus for placing object to be processed and plasma processing apparatus
PCT/JP2001/006105 WO2002007212A1 (en) 2000-07-17 2001-07-13 Holding device for treated body

Publications (1)

Publication Number Publication Date
AU2001269523A1 true AU2001269523A1 (en) 2002-01-30

Family

ID=18711801

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001269523A Abandoned AU2001269523A1 (en) 2000-07-17 2001-07-13 Holding device for treated body

Country Status (6)

Country Link
US (1) US6733624B2 (en)
JP (1) JP4559595B2 (en)
CN (1) CN1261995C (en)
AU (1) AU2001269523A1 (en)
TW (1) TW506033B (en)
WO (1) WO2002007212A1 (en)

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002065532A1 (en) * 2001-02-15 2002-08-22 Tokyo Electron Limited Work treating method and treating device
JP4657473B2 (en) * 2001-03-06 2011-03-23 東京エレクトロン株式会社 Plasma processing equipment
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
CN1249777C (en) * 2001-08-27 2006-04-05 松下电器产业株式会社 Device and method for plasma treatment
US6677167B2 (en) * 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
JP4082924B2 (en) 2002-04-16 2008-04-30 キヤノンアネルバ株式会社 Electrostatic chuck holder and substrate processing apparatus
US20040040664A1 (en) * 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
JP4034145B2 (en) * 2002-08-09 2008-01-16 住友大阪セメント株式会社 Susceptor device
US7275577B2 (en) 2002-11-16 2007-10-02 Lg.Philips Lcd Co., Ltd. Substrate bonding machine for liquid crystal display device
CN101996843B (en) * 2003-01-07 2013-05-01 东京毅力科创株式会社 Plasma processing device and focusing ring
US20040173314A1 (en) * 2003-03-05 2004-09-09 Ryoji Nishio Plasma processing apparatus and method
WO2004095529A2 (en) * 2003-03-21 2004-11-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
JP4547182B2 (en) * 2003-04-24 2010-09-22 東京エレクトロン株式会社 Plasma processing equipment
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
KR100512745B1 (en) * 2003-07-24 2005-09-07 삼성전자주식회사 Elecrostatic Chuck
US20050051098A1 (en) * 2003-09-05 2005-03-10 Tooru Aramaki Plasma processing apparatus
JP2005150370A (en) * 2003-11-14 2005-06-09 Kyocera Corp Electrostatic chuck
US7338578B2 (en) * 2004-01-20 2008-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Step edge insert ring for etch chamber
JP4504061B2 (en) * 2004-03-29 2010-07-14 東京エレクトロン株式会社 Plasma processing method
KR100674922B1 (en) * 2004-12-02 2007-01-26 삼성전자주식회사 Wafer supporting apparatus having cooling path for cooling focus ring
KR100677039B1 (en) 2004-12-22 2007-01-31 동부일렉트로닉스 주식회사 Dry etching method
JP4336320B2 (en) * 2005-02-25 2009-09-30 キヤノンアネルバ株式会社 Wafer holder
US7993489B2 (en) 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
US8664124B2 (en) 2005-10-31 2014-03-04 Novellus Systems, Inc. Method for etching organic hardmasks
JP2007173596A (en) * 2005-12-22 2007-07-05 Ngk Insulators Ltd Electrostatic chuck
JP2008103403A (en) * 2006-10-17 2008-05-01 Tokyo Electron Ltd Substrate mount table and plasma treatment apparatus
JP4695606B2 (en) * 2007-01-09 2011-06-08 東京エレクトロン株式会社 Method for improving heat conduction of focus ring in substrate mounting apparatus
KR100849179B1 (en) * 2007-01-10 2008-07-30 삼성전자주식회사 Structure for protecting gap formation and plasma processing equipment having the same
JP5102500B2 (en) * 2007-01-22 2012-12-19 東京エレクトロン株式会社 Substrate processing equipment
US7915166B1 (en) 2007-02-22 2011-03-29 Novellus Systems, Inc. Diffusion barrier and etch stop films
JP5035884B2 (en) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 Thermal conductive sheet and substrate mounting apparatus using the same
JP5317424B2 (en) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 Plasma processing equipment
US8962101B2 (en) 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
CN101471275B (en) * 2007-12-26 2011-04-06 北京北方微电子基地设备工艺研究中心有限责任公司 Device for holding substance to be processed
US8435608B1 (en) 2008-06-27 2013-05-07 Novellus Systems, Inc. Methods of depositing smooth and conformal ashable hard mask films
KR101048066B1 (en) * 2009-08-25 2011-07-11 세메스 주식회사 Substrate processing apparatus
US9111729B2 (en) 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
CN101750427B (en) * 2009-12-31 2011-11-16 中国科学院等离子体物理研究所 Temperature controlling sample holder capable of adjusting incident ion energy and monitoring ion flux in real time
US9190289B2 (en) 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US8563414B1 (en) 2010-04-23 2013-10-22 Novellus Systems, Inc. Methods for forming conductive carbon films by PECVD
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
JP5503503B2 (en) * 2010-11-09 2014-05-28 東京エレクトロン株式会社 Plasma processing equipment
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
SG195494A1 (en) 2012-05-18 2013-12-30 Novellus Systems Inc Carbon deposition-etch-ash gap fill process
US9088085B2 (en) 2012-09-21 2015-07-21 Novellus Systems, Inc. High temperature electrode connections
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
KR20140078284A (en) * 2012-12-17 2014-06-25 삼성디스플레이 주식회사 Deposition source and Deposition appatatus using the same
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
CN104064490A (en) * 2013-03-22 2014-09-24 株式会社东芝 Semiconductor manufacturing apparatus and semiconductor wafer holder
US9281227B2 (en) * 2013-06-28 2016-03-08 Axcelis Technologies, Inc. Multi-resistivity Johnsen-Rahbek electrostatic clamp
US9589799B2 (en) 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
US9320387B2 (en) 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
JP6224428B2 (en) * 2013-11-19 2017-11-01 東京エレクトロン株式会社 Method of attracting the focus ring to the mounting table
JP6149945B2 (en) 2014-09-30 2017-06-21 住友大阪セメント株式会社 Electrostatic chuck device
JP5798677B2 (en) * 2014-10-29 2015-10-21 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
CN106782006B (en) * 2016-12-16 2019-04-26 新昌县羽林街道宏博机械厂 A kind of Johnson-drawing Buick effect demonstration device
JP6861579B2 (en) * 2017-06-02 2021-04-21 東京エレクトロン株式会社 Plasma processing equipment, electrostatic adsorption method and electrostatic adsorption program
CN110770891B (en) * 2017-10-30 2023-04-07 日本碍子株式会社 Electrostatic chuck and method of manufacturing the same
WO2019088204A1 (en) 2017-11-06 2019-05-09 日本碍子株式会社 Electrostatic chuck assembly, electrostatic chuck, and focus ring
JP7033441B2 (en) * 2017-12-01 2022-03-10 東京エレクトロン株式会社 Plasma processing equipment
CN111684574B (en) 2018-02-20 2023-09-05 住友大阪水泥股份有限公司 Electrostatic chuck device and method for manufacturing electrostatic chuck device
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7101055B2 (en) * 2018-06-12 2022-07-14 東京エレクトロン株式会社 Electrostatic chuck, focus ring, support base, plasma processing device, and plasma processing method
CN112514046B (en) 2018-08-02 2024-02-27 住友大阪水泥股份有限公司 Electrostatic chuck device and method for manufacturing electrostatic chuck device
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7209515B2 (en) * 2018-11-27 2023-01-20 東京エレクトロン株式会社 Substrate holding mechanism and deposition equipment
JP2022523630A (en) * 2019-01-15 2022-04-26 アプライド マテリアルズ インコーポレイテッド Pedestal for substrate processing chamber
JP7451540B2 (en) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド Feedback loop for controlling pulsed voltage waveforms
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
CN109881184B (en) * 2019-03-29 2022-03-25 拓荆科技股份有限公司 Substrate bearing device with electrostatic force suppression
KR20220002748A (en) 2019-05-29 2022-01-06 램 리써치 코포레이션 High Selectivity, Low Stress, and Low Hydrogen Diamond-Like Carbon Hard Masks with High Power Pulsed Low Frequency RF
JP7333712B2 (en) * 2019-06-05 2023-08-25 東京エレクトロン株式会社 Electrostatic chuck, support table and plasma processing equipment
US11894255B2 (en) 2019-07-30 2024-02-06 Applied Materials, Inc. Sheath and temperature control of process kit
CN113994462A (en) 2019-09-06 2022-01-28 Toto株式会社 Electrostatic chuck
JP7474651B2 (en) 2019-09-09 2024-04-25 東京エレクトロン株式会社 Plasma Processing Equipment
JP7414570B2 (en) * 2020-02-14 2024-01-16 キヤノン株式会社 Holding devices and lithography devices
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
JP2022095187A (en) * 2020-12-16 2022-06-28 新光電気工業株式会社 Electrostatic chuck and board fixing device
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
KR20240023670A (en) * 2021-07-02 2024-02-22 어플라이드 머티어리얼스, 인코포레이티드 High temperature susceptor for high power RF applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07310187A (en) * 1994-05-16 1995-11-28 Kobe Steel Ltd Plasma treating device
US5790365A (en) * 1996-07-31 1998-08-04 Applied Materials, Inc. Method and apparatus for releasing a workpiece from and electrostatic chuck
JPH10303288A (en) * 1997-04-26 1998-11-13 Anelva Corp Board holder for plasma treatment
JP4151749B2 (en) * 1998-07-16 2008-09-17 東京エレクトロンＡｔ株式会社 Plasma processing apparatus and method

Also Published As

Publication number Publication date
US20030106647A1 (en) 2003-06-12
US6733624B2 (en) 2004-05-11
CN1261995C (en) 2006-06-28
JP4559595B2 (en) 2010-10-06
WO2002007212A1 (en) 2002-01-24
CN1437764A (en) 2003-08-20
JP2002033376A (en) 2002-01-31
TW506033B (en) 2002-10-11

Similar Documents

Publication Publication Date Title
AU2001269523A1 (en) Holding device for treated body
AU3327100A (en) Device for moving body
AU2002220027A1 (en) Medical grasping device
AU2002226947A1 (en) Bunion treating device
AU4498201A (en) Quinolinyl-piperidin-4-ylidene-methyl-benzamide derivatives for the treatment ofpain
TW477477U (en) Holding device
AU2002218439A1 (en) Apparatus for treating body ailments
AU2001269038A1 (en) Water treatment device
AU2002354125A1 (en) Body support device
AU2002361066A1 (en) Device for holding at least one document body
AU2001235492A1 (en) Method and device for effluent treatment
AU2168201A (en) Gripping device
AU5626201A (en) Device for sterilizing packagings
AU2001270868A1 (en) Surgical apparatus for manipulating body parts
TW471731U (en) Holding device
AU2504101A (en) Device for carrying out the oscillation-induced selective treatment of malignantdiseases
AU2001244011A1 (en) Biofiltering device for treating wastewater
AU5691400A (en) Fluid treatment device
AU140015S (en) Holding device
TW479626U (en) Treatment device for junk
WO2001085090A8 (en) Therapy device
EP1213070A3 (en) Process and device for metalcasting
AU3062299A (en) Holding device for ski treatment
AU2001271196A1 (en) Holding device
AU2001295424A1 (en) Holding device for flat objects