AU2001257488A1 - A novel capacitively coupled dtmos on soi - Google Patents
A novel capacitively coupled dtmos on soiInfo
- Publication number
- AU2001257488A1 AU2001257488A1 AU2001257488A AU5748801A AU2001257488A1 AU 2001257488 A1 AU2001257488 A1 AU 2001257488A1 AU 2001257488 A AU2001257488 A AU 2001257488A AU 5748801 A AU5748801 A AU 5748801A AU 2001257488 A1 AU2001257488 A1 AU 2001257488A1
- Authority
- AU
- Australia
- Prior art keywords
- dtmos
- soi
- novel
- capacitively coupled
- capacitively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/605,920 US6420767B1 (en) | 2000-06-28 | 2000-06-28 | Capacitively coupled DTMOS on SOI |
| US09605920 | 2000-06-28 | ||
| PCT/US2001/014127 WO2002003468A2 (en) | 2000-06-28 | 2001-05-01 | A novel capacitively coupled dtmos on soi |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001257488A1 true AU2001257488A1 (en) | 2002-01-14 |
Family
ID=24425756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001257488A Abandoned AU2001257488A1 (en) | 2000-06-28 | 2001-05-01 | A novel capacitively coupled dtmos on soi |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6420767B1 (en) |
| EP (1) | EP1307922A2 (en) |
| AU (1) | AU2001257488A1 (en) |
| TW (1) | TW503578B (en) |
| WO (1) | WO2002003468A2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6599789B1 (en) * | 2000-11-15 | 2003-07-29 | Micron Technology, Inc. | Method of forming a field effect transistor |
| US6709913B2 (en) * | 2001-09-04 | 2004-03-23 | Sharp Laboratories Of America, Inc. | Method for adjusting ultra-thin SOI MOS transistor threshold voltages |
| JP2003332582A (en) * | 2002-05-13 | 2003-11-21 | Toshiba Corp | Semiconductor device and its manufacturing method |
| US7071043B2 (en) * | 2002-08-15 | 2006-07-04 | Micron Technology, Inc. | Methods of forming a field effect transistor having source/drain material over insulative material |
| JP2004319853A (en) * | 2003-04-17 | 2004-11-11 | Oki Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
| DE10343132B4 (en) * | 2003-09-18 | 2009-07-09 | X-Fab Semiconductor Foundries Ag | Isolated MOS transistors with extended drain region for increased voltages |
| US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
| TWM514577U (en) | 2015-07-23 | 2015-12-21 | 胡聯雄 | Refractive lens and sheet-like structure having refractive lens |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5439839A (en) * | 1994-07-13 | 1995-08-08 | Winbond Electronics Corporation | Self-aligned source/drain MOS process |
| JP2715929B2 (en) * | 1994-08-18 | 1998-02-18 | 日本電気株式会社 | Semiconductor integrated circuit device |
| US5559368A (en) * | 1994-08-30 | 1996-09-24 | The Regents Of The University Of California | Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation |
| JP3634086B2 (en) | 1996-08-13 | 2005-03-30 | 株式会社半導体エネルギー研究所 | Method for manufacturing insulated gate type semiconductor device |
| JPH10284729A (en) | 1997-02-07 | 1998-10-23 | Sony Corp | Insulated gate transistor element and drive method thereof |
| JPH10270687A (en) | 1997-03-27 | 1998-10-09 | Mitsubishi Electric Corp | Field-effect transistor and manufacture thereof |
| US5889293A (en) | 1997-04-04 | 1999-03-30 | International Business Machines Corporation | Electrical contact to buried SOI structures |
| US5920093A (en) | 1997-04-07 | 1999-07-06 | Motorola, Inc. | SOI FET having gate sub-regions conforming to t-shape |
| JP3859821B2 (en) | 1997-07-04 | 2006-12-20 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| TW332316B (en) * | 1997-07-22 | 1998-05-21 | Holtek Microelectronics Inc | Manufacturing method of MOS transistor with adjustable source/drain extension area |
| JP3164047B2 (en) * | 1997-11-28 | 2001-05-08 | 日本ビクター株式会社 | Semiconductor device |
| US6020222A (en) | 1997-12-16 | 2000-02-01 | Advanced Micro Devices, Inc. | Silicon oxide insulator (SOI) semiconductor having selectively linked body |
| US5856226A (en) * | 1997-12-19 | 1999-01-05 | Texas Instruments-Acer Incorporated | Method of making ultra-short channel MOSFET with self-aligned silicided contact and extended S/D junction |
| US6238982B1 (en) * | 1999-04-13 | 2001-05-29 | Advanced Micro Devices | Multiple threshold voltage semiconductor device fabrication technology |
| US6319783B1 (en) * | 1999-11-19 | 2001-11-20 | Chartered Semiconductor Manufatcuring Ltd. | Process to fabricate a novel source-drain extension |
-
2000
- 2000-06-28 US US09/605,920 patent/US6420767B1/en not_active Expired - Lifetime
-
2001
- 2001-05-01 AU AU2001257488A patent/AU2001257488A1/en not_active Abandoned
- 2001-05-01 WO PCT/US2001/014127 patent/WO2002003468A2/en active Search and Examination
- 2001-05-01 EP EP01931008A patent/EP1307922A2/en not_active Withdrawn
- 2001-06-28 TW TW090115697A patent/TW503578B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002003468A2 (en) | 2002-01-10 |
| TW503578B (en) | 2002-09-21 |
| US6420767B1 (en) | 2002-07-16 |
| WO2002003468A3 (en) | 2002-04-11 |
| EP1307922A2 (en) | 2003-05-07 |
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