AU2001255804A1 - Nitride layer forming methods - Google Patents

Nitride layer forming methods

Info

Publication number
AU2001255804A1
AU2001255804A1 AU2001255804A AU5580401A AU2001255804A1 AU 2001255804 A1 AU2001255804 A1 AU 2001255804A1 AU 2001255804 A AU2001255804 A AU 2001255804A AU 5580401 A AU5580401 A AU 5580401A AU 2001255804 A1 AU2001255804 A1 AU 2001255804A1
Authority
AU
Australia
Prior art keywords
nitride layer
layer forming
forming methods
methods
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001255804A
Inventor
Rita J. Klein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2001255804A1 publication Critical patent/AU2001255804A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
AU2001255804A 2000-03-03 2001-03-01 Nitride layer forming methods Abandoned AU2001255804A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/518,560 US6440230B1 (en) 2000-03-03 2000-03-03 Nitride layer forming method
US09518560 2000-03-03
PCT/US2001/040239 WO2001065599A2 (en) 2000-03-03 2001-03-01 Nitride layer forming methods

Publications (1)

Publication Number Publication Date
AU2001255804A1 true AU2001255804A1 (en) 2001-09-12

Family

ID=24064472

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001255804A Abandoned AU2001255804A1 (en) 2000-03-03 2001-03-01 Nitride layer forming methods

Country Status (6)

Country Link
US (2) US6440230B1 (en)
EP (1) EP1259984A2 (en)
JP (2) JP4051603B2 (en)
KR (1) KR100484966B1 (en)
AU (1) AU2001255804A1 (en)
WO (1) WO2001065599A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6758223B1 (en) * 2000-06-23 2004-07-06 Infineon Technologies Ag Plasma RIE polymer removal
FR2811564B1 (en) * 2000-07-13 2002-12-27 Oreal NANOEMULSION CONTAINING NON-IONIC POLYMERS, AND ITS USES IN PARTICULAR IN THE COSMETIC, DERMATOLOGICAL, PHARMACEUTICAL AND / OR OPHTHALMOLOGICAL FIELDS
US7098128B2 (en) * 2004-09-01 2006-08-29 Micron Technology, Inc. Method for filling electrically different features
US8173995B2 (en) 2005-12-23 2012-05-08 E. I. Du Pont De Nemours And Company Electronic device including an organic active layer and process for forming the electronic device
US9598761B2 (en) * 2009-05-26 2017-03-21 The Gillette Company Strengthened razor blade
WO2012036178A1 (en) * 2010-09-17 2012-03-22 株式会社村田製作所 Acoustic-wave device
US10347825B2 (en) * 2017-02-17 2019-07-09 International Business Machines Corporation Selective deposition and nitridization of bottom electrode metal for MRAM applications

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4389517A (en) 1982-04-02 1983-06-21 The Dow Chemical Company Hydrogenation of phenylacetylene prior to styrene polymerization
JPS6093438A (en) * 1983-10-27 1985-05-25 Konishiroku Photo Ind Co Ltd Photomask
JP2839579B2 (en) 1989-10-02 1998-12-16 株式会社東芝 Semiconductor device and manufacturing method thereof
US5226975A (en) 1991-03-20 1993-07-13 Cummins Engine Company, Inc. Plasma nitride chromium plated coating method
US5275715A (en) 1992-01-23 1994-01-04 Micron Technology Inc. Electroplating process for enhancing the conformality of titanium and titanium nitride films in the manufacture of integrated circuits and structures produced thereby
JPH05287049A (en) 1992-04-08 1993-11-02 Mitsubishi Gas Chem Co Inc High refractive index lens composition
US5286676A (en) 1992-06-15 1994-02-15 Hewlett-Packard Company Methods of making integrated circuit barrier structures
JPH07140475A (en) * 1993-11-16 1995-06-02 Rohm Co Ltd Wiring structure of liquid crystal display device
KR0179822B1 (en) 1995-04-01 1999-04-15 문정환 Interconnections structure of semiconductor device and method for manufacturing thereof
DE19548051A1 (en) * 1995-12-21 1997-06-26 Siemens Matsushita Components Electronic component, in particular component working with surface acoustic waves - SAW component -
GB9710514D0 (en) * 1996-09-21 1997-07-16 Philips Electronics Nv Electronic devices and their manufacture
US6183859B1 (en) * 1998-07-20 2001-02-06 Motorola, Inc Low resistance MTJ
US6224991B1 (en) * 1999-09-13 2001-05-01 Yates Foil Usa, Inc. Process for electrodeposition of barrier layer over copper foil bonding treatment, products thereof and electrolyte useful in such process

Also Published As

Publication number Publication date
US6440230B1 (en) 2002-08-27
JP4051636B2 (en) 2008-02-27
WO2001065599A3 (en) 2002-02-28
US6589414B2 (en) 2003-07-08
KR100484966B1 (en) 2005-04-25
JP2007049210A (en) 2007-02-22
EP1259984A2 (en) 2002-11-27
JP4051603B2 (en) 2008-02-27
US20010025797A1 (en) 2001-10-04
KR20030038533A (en) 2003-05-16
JP2003529922A (en) 2003-10-07
WO2001065599A2 (en) 2001-09-07

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