AU2001252527A1 - A nanotube-based electron emission device and systems using the same - Google Patents
A nanotube-based electron emission device and systems using the sameInfo
- Publication number
- AU2001252527A1 AU2001252527A1 AU2001252527A AU5252701A AU2001252527A1 AU 2001252527 A1 AU2001252527 A1 AU 2001252527A1 AU 2001252527 A AU2001252527 A AU 2001252527A AU 5252701 A AU5252701 A AU 5252701A AU 2001252527 A1 AU2001252527 A1 AU 2001252527A1
- Authority
- AU
- Australia
- Prior art keywords
- nanotube
- systems
- same
- electron emission
- emission device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles
Abstract
A device that produces an electron beam with high optical quality for processing a sample, is presented. The optical quality is manifested by very high brightness and low energy spread. The device includes an electron source device comprising an electrode in the form of a shaped first layer, preferably in the form of a conducting crater carrying at least one nanotube, and an extracting electrode, which is formed with at least one aperture and is insulated from the firs layer. The source can be used in any column that requires such properties. The column according to the invention may be a full size or a miniature electron microscope, a lithography tool, a tool used for direct writing of wafers or a field emission display.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09561958 | 2000-05-01 | ||
US09/561,958 US6512235B1 (en) | 2000-05-01 | 2000-05-01 | Nanotube-based electron emission device and systems using the same |
PCT/IL2001/000385 WO2001084130A2 (en) | 2000-05-01 | 2001-04-30 | A nanotube-based electron emission device and systems using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001252527A1 true AU2001252527A1 (en) | 2001-11-12 |
Family
ID=24244206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001252527A Abandoned AU2001252527A1 (en) | 2000-05-01 | 2001-04-30 | A nanotube-based electron emission device and systems using the same |
Country Status (8)
Country | Link |
---|---|
US (1) | US6512235B1 (en) |
EP (1) | EP1279183B1 (en) |
JP (1) | JP2003532274A (en) |
AT (1) | ATE321355T1 (en) |
AU (1) | AU2001252527A1 (en) |
DE (1) | DE60118170T2 (en) |
IL (1) | IL152568A0 (en) |
WO (1) | WO2001084130A2 (en) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6692324B2 (en) * | 2000-08-29 | 2004-02-17 | Ut-Battelle, Llc | Single self-aligned carbon containing tips |
US20030178583A1 (en) * | 2000-09-18 | 2003-09-25 | Kampherbeek Bert Jan | Field emission photo-cathode array for lithography system and lithography system provided with such an array |
KR100421218B1 (en) * | 2001-06-04 | 2004-03-02 | 삼성전자주식회사 | Apparatus of electron emission lithography by using selectively grown carbon nanotube and lithography method thereof |
TW516061B (en) * | 2001-09-12 | 2003-01-01 | Ind Tech Res Inst | Manufacturing method for triode-type electron emitting source |
US6979947B2 (en) * | 2002-07-09 | 2005-12-27 | Si Diamond Technology, Inc. | Nanotriode utilizing carbon nanotubes and fibers |
US7023622B2 (en) | 2002-08-06 | 2006-04-04 | Dmetrix, Inc. | Miniature microscope objective lens |
US7012266B2 (en) * | 2002-08-23 | 2006-03-14 | Samsung Electronics Co., Ltd. | MEMS-based two-dimensional e-beam nano lithography device and method for making the same |
US6864162B2 (en) * | 2002-08-23 | 2005-03-08 | Samsung Electronics Co., Ltd. | Article comprising gated field emission structures with centralized nanowires and method for making the same |
WO2004045267A2 (en) | 2002-08-23 | 2004-06-03 | The Regents Of The University Of California | Improved microscale vacuum tube device and method for making same |
US7113651B2 (en) | 2002-11-20 | 2006-09-26 | Dmetrix, Inc. | Multi-spectral miniature microscope array |
KR20060133974A (en) * | 2003-10-16 | 2006-12-27 | 더 유니버시티 오브 아크론 | Carbon nanotubes on carbon nanofiber substrate |
US20050140261A1 (en) * | 2003-10-23 | 2005-06-30 | Pinchas Gilad | Well structure with axially aligned field emission fiber or carbon nanotube and method for making same |
US7181958B2 (en) * | 2003-12-15 | 2007-02-27 | University Of South Florida | High aspect ratio tip atomic force microscopy cantilevers and method of manufacture |
JP4279689B2 (en) * | 2004-01-08 | 2009-06-17 | 株式会社荏原製作所 | Electron beam equipment |
US7838839B2 (en) * | 2003-12-30 | 2010-11-23 | Commissariat A L'energie Atomique | Hybrid multibeam electronic emission device with controlled divergence |
KR100562701B1 (en) * | 2004-01-07 | 2006-03-23 | 삼성전자주식회사 | Electron source, apparatus and method for inspecting non-opening of a hole using the same |
JP4658490B2 (en) * | 2004-02-26 | 2011-03-23 | 大研化学工業株式会社 | Electron source and manufacturing method thereof |
CN101006422A (en) * | 2004-04-19 | 2007-07-25 | 索雷克核研究中心 | High-speed, true random-number generator |
US20060001350A1 (en) * | 2004-06-30 | 2006-01-05 | Hitachi High-Technologies Corporation | Field emission electron gun and electron beam apparatus using the same |
KR20060012782A (en) * | 2004-08-04 | 2006-02-09 | 삼성에스디아이 주식회사 | Field emission device and display adopting the same |
US20080012461A1 (en) * | 2004-11-09 | 2008-01-17 | Nano-Proprietary, Inc. | Carbon nanotube cold cathode |
TWI248859B (en) * | 2004-11-24 | 2006-02-11 | Ind Tech Res Inst | Manufacture of mold core used in nanoimprint |
RU2406689C2 (en) * | 2005-04-25 | 2010-12-20 | Смольтек Аб | Nanostructure, precursor of nanostructure and method of forming nanostructure and precursor of nanostructure |
US20080067421A1 (en) * | 2006-08-16 | 2008-03-20 | Kuei-Wen Cheng | Electron Beam Etching Apparatus and Method for the same |
US8507785B2 (en) * | 2007-11-06 | 2013-08-13 | Pacific Integrated Energy, Inc. | Photo induced enhanced field electron emission collector |
KR101420244B1 (en) * | 2008-05-20 | 2014-07-21 | 재단법인서울대학교산학협력재단 | Beam forming electrode and electron gun using the same |
WO2010052712A1 (en) * | 2008-11-05 | 2010-05-14 | El-Mul Technologies Ltd | Charged particle emitting assembly |
US8766522B1 (en) | 2010-06-02 | 2014-07-01 | The United States Of America As Represented By The Secretary Of The Air Force | Carbon nanotube fiber cathode |
KR20130129886A (en) | 2010-06-08 | 2013-11-29 | 퍼시픽 인테그레이티드 에너지, 인크. | Optical antennas with enhanced fields and electron emission |
US9219885B2 (en) * | 2011-08-24 | 2015-12-22 | Delta Design, Inc. | Imaging system with defocused and aperture-cropped light sources for detecting surface characteristics |
JP7092470B2 (en) * | 2017-07-24 | 2022-06-28 | Necネットワーク・センサ株式会社 | Electron gun |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4405768A1 (en) | 1994-02-23 | 1995-08-24 | Till Keesmann | Field emission cathode device and method for its manufacture |
US5731228A (en) | 1994-03-11 | 1998-03-24 | Fujitsu Limited | Method for making micro electron beam source |
JPH08339773A (en) * | 1995-06-09 | 1996-12-24 | Hitachi Ltd | Electron source and electron beam device |
AU5777096A (en) | 1995-06-12 | 1997-01-09 | Ecole Polytechnique Federale De Lausanne | Electron source and applications of the same |
US5872422A (en) | 1995-12-20 | 1999-02-16 | Advanced Technology Materials, Inc. | Carbon fiber-based field emission devices |
JP2873930B2 (en) * | 1996-02-13 | 1999-03-24 | 工業技術院長 | Carbonaceous solid structure having carbon nanotubes, electron emitter for electron beam source element composed of carbonaceous solid structure, and method of manufacturing carbonaceous solid structure |
JP3008852B2 (en) * | 1996-06-21 | 2000-02-14 | 日本電気株式会社 | Electron emitting device and method of manufacturing the same |
JP2000516708A (en) | 1996-08-08 | 2000-12-12 | ウィリアム・マーシュ・ライス・ユニバーシティ | Macroscopically operable nanoscale devices fabricated from nanotube assemblies |
US6057637A (en) | 1996-09-13 | 2000-05-02 | The Regents Of The University Of California | Field emission electron source |
KR100365444B1 (en) * | 1996-09-18 | 2004-01-24 | 가부시끼가이샤 도시바 | Vacuum micro device and image display device using the same |
JPH10241615A (en) * | 1997-02-25 | 1998-09-11 | Nikon Corp | Electron ray exposure device |
JP3441923B2 (en) * | 1997-06-18 | 2003-09-02 | キヤノン株式会社 | Manufacturing method of carbon nanotube |
JP3740295B2 (en) * | 1997-10-30 | 2006-02-01 | キヤノン株式会社 | Carbon nanotube device, manufacturing method thereof, and electron-emitting device |
JPH11233060A (en) * | 1998-02-17 | 1999-08-27 | Fujitsu Ltd | Secondary-electron detector and electron beam device using the same |
US6023060A (en) | 1998-03-03 | 2000-02-08 | Etec Systems, Inc. | T-shaped electron-beam microcolumn as a general purpose scanning electron microscope |
JP3902883B2 (en) | 1998-03-27 | 2007-04-11 | キヤノン株式会社 | Nanostructure and manufacturing method thereof |
JP2000067736A (en) * | 1998-08-14 | 2000-03-03 | Sony Corp | Electron emission element, its manufacture, and display device using the same |
JP3497740B2 (en) | 1998-09-09 | 2004-02-16 | 株式会社東芝 | Method for producing carbon nanotube and method for producing field emission cold cathode device |
EP1145272A3 (en) * | 1998-10-21 | 2002-11-27 | Etec Systems, Inc. | Improved alignment of a thermal field emission electron source and application in a microcolumn |
US6232706B1 (en) * | 1998-11-12 | 2001-05-15 | The Board Of Trustees Of The Leland Stanford Junior University | Self-oriented bundles of carbon nanotubes and method of making same |
-
2000
- 2000-05-01 US US09/561,958 patent/US6512235B1/en not_active Expired - Fee Related
-
2001
- 2001-04-30 IL IL15256801A patent/IL152568A0/en active IP Right Grant
- 2001-04-30 WO PCT/IL2001/000385 patent/WO2001084130A2/en active IP Right Grant
- 2001-04-30 AU AU2001252527A patent/AU2001252527A1/en not_active Abandoned
- 2001-04-30 DE DE60118170T patent/DE60118170T2/en not_active Expired - Lifetime
- 2001-04-30 AT AT01925852T patent/ATE321355T1/en not_active IP Right Cessation
- 2001-04-30 JP JP2001581104A patent/JP2003532274A/en active Pending
- 2001-04-30 EP EP01925852A patent/EP1279183B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1279183A2 (en) | 2003-01-29 |
DE60118170D1 (en) | 2006-05-11 |
JP2003532274A (en) | 2003-10-28 |
ATE321355T1 (en) | 2006-04-15 |
WO2001084130A2 (en) | 2001-11-08 |
DE60118170T2 (en) | 2006-12-28 |
EP1279183B1 (en) | 2006-03-22 |
IL152568A0 (en) | 2003-05-29 |
WO2001084130A3 (en) | 2002-06-13 |
US6512235B1 (en) | 2003-01-28 |
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