AU2001249843A1 - Copper interconnects with improved electromigration resistance and low resistivity - Google Patents

Copper interconnects with improved electromigration resistance and low resistivity

Info

Publication number
AU2001249843A1
AU2001249843A1 AU2001249843A AU4984301A AU2001249843A1 AU 2001249843 A1 AU2001249843 A1 AU 2001249843A1 AU 2001249843 A AU2001249843 A AU 2001249843A AU 4984301 A AU4984301 A AU 4984301A AU 2001249843 A1 AU2001249843 A1 AU 2001249843A1
Authority
AU
Australia
Prior art keywords
low resistivity
electromigration resistance
copper interconnects
improved electromigration
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001249843A
Inventor
Pin-Chin Connie Wang
Christy Mei-Chu Woo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2001249843A1 publication Critical patent/AU2001249843A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AU2001249843A 2000-06-14 2001-04-03 Copper interconnects with improved electromigration resistance and low resistivity Abandoned AU2001249843A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/593,231 US6525425B1 (en) 2000-06-14 2000-06-14 Copper interconnects with improved electromigration resistance and low resistivity
US09593231 2000-06-14
PCT/US2001/010923 WO2001097283A1 (en) 2000-06-14 2001-04-03 Copper interconnects with improved electromigration resistance and low resistivity

Publications (1)

Publication Number Publication Date
AU2001249843A1 true AU2001249843A1 (en) 2001-12-24

Family

ID=24373934

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001249843A Abandoned AU2001249843A1 (en) 2000-06-14 2001-04-03 Copper interconnects with improved electromigration resistance and low resistivity

Country Status (5)

Country Link
US (1) US6525425B1 (en)
EP (1) EP1309993A1 (en)
AU (1) AU2001249843A1 (en)
TW (1) TW492150B (en)
WO (1) WO2001097283A1 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105434B2 (en) 1999-10-02 2006-09-12 Uri Cohen Advanced seed layery for metallic interconnects
US6657303B1 (en) * 2000-12-18 2003-12-02 Advanced Micro Devices, Inc. Integrated circuit with low solubility metal-conductor interconnect cap
EP1430537A1 (en) * 2001-09-04 2004-06-23 Koninklijke Philips Electronics N.V. Method for producing a semiconductor device having an edge structure
US6780772B2 (en) * 2001-12-21 2004-08-24 Nutool, Inc. Method and system to provide electroplanarization of a workpiece with a conducting material layer
US7239747B2 (en) * 2002-01-24 2007-07-03 Chatterbox Systems, Inc. Method and system for locating position in printed texts and delivering multimedia information
US20030188974A1 (en) * 2002-04-03 2003-10-09 Applied Materials, Inc. Homogeneous copper-tin alloy plating for enhancement of electro-migration resistance in interconnects
US7074709B2 (en) * 2002-06-28 2006-07-11 Texas Instruments Incorporated Localized doping and/or alloying of metallization for increased interconnect performance
US20040061237A1 (en) * 2002-09-26 2004-04-01 Advanced Micro Devices, Inc. Method of reducing voiding in copper interconnects with copper alloys in the seed layer
US20040118699A1 (en) * 2002-10-02 2004-06-24 Applied Materials, Inc. Homogeneous copper-palladium alloy plating for enhancement of electro-migration resistance in interconnects
US7880305B2 (en) * 2002-11-07 2011-02-01 International Business Machines Corporation Technology for fabrication of packaging interface substrate wafers with fully metallized vias through the substrate wafer
US20040108217A1 (en) * 2002-12-05 2004-06-10 Dubin Valery M. Methods for forming copper interconnect structures by co-plating of noble metals and structures formed thereby
US6995089B2 (en) * 2003-05-08 2006-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method to remove copper without pattern density effect
US7026244B2 (en) * 2003-08-08 2006-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Low resistance and reliable copper interconnects by variable doping
DE10339990B8 (en) 2003-08-29 2013-01-31 Advanced Micro Devices, Inc. A method of fabricating a metal line having increased resistance to electromigration along an interface of a dielectric barrier layer by implanting material into the metal line
US20060001170A1 (en) * 2004-07-01 2006-01-05 Fan Zhang Conductive compound cap layer
JP4178295B2 (en) * 2004-07-14 2008-11-12 富士通マイクロエレクトロニクス株式会社 Semiconductor device having wiring made of copper and method of manufacturing the same
US7169700B2 (en) * 2004-08-06 2007-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Metal interconnect features with a doping gradient
US20060091551A1 (en) * 2004-10-29 2006-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Differentially metal doped copper damascenes
KR100675280B1 (en) * 2005-06-22 2007-01-29 삼성전자주식회사 Selective copper alloy interconnections in semiconductor devices and methods of forming the same
US7585768B2 (en) * 2006-06-16 2009-09-08 Chartered Semiconductor Manufacturing, Ltd. Combined copper plating method to improve gap fill
US20110127673A1 (en) * 2009-12-01 2011-06-02 International Business Machines Corporation Wiring structure and method
US8461683B2 (en) * 2011-04-01 2013-06-11 Intel Corporation Self-forming, self-aligned barriers for back-end interconnects and methods of making same
US8569888B2 (en) 2011-05-24 2013-10-29 International Business Machines Corporation Wiring structure and method of forming the structure
US8525339B2 (en) * 2011-07-27 2013-09-03 International Business Machines Corporation Hybrid copper interconnect structure and method of fabricating same
US20130240484A1 (en) * 2012-03-19 2013-09-19 Lam Research Corporation Electroless copper alloy capping
TWI455663B (en) 2012-10-16 2014-10-01 Univ Nat Chiao Tung Circuit board with twinned cu circuit layer and method for manufacturing the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766379A (en) * 1995-06-07 1998-06-16 The Research Foundation Of State University Of New York Passivated copper conductive layers for microelectronic applications and methods of manufacturing same
US5814557A (en) 1996-05-20 1998-09-29 Motorola, Inc. Method of forming an interconnect structure
US6139697A (en) 1997-01-31 2000-10-31 Applied Materials, Inc. Low temperature integrated via and trench fill process and apparatus
US6387805B2 (en) 1997-05-08 2002-05-14 Applied Materials, Inc. Copper alloy seed layer for copper metallization
US5891802A (en) * 1997-07-23 1999-04-06 Advanced Micro Devices, Inc. Method for fabricating a metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects
US5989623A (en) * 1997-08-19 1999-11-23 Applied Materials, Inc. Dual damascene metallization
US6010960A (en) * 1997-10-29 2000-01-04 Advanced Micro Devices, Inc. Method and system for providing an interconnect having reduced failure rates due to voids
TW350133B (en) * 1998-02-06 1999-01-11 United Microelectronics Corp Method of formation of on-line in copper
US6022808A (en) 1998-03-16 2000-02-08 Advanced Micro Devices, Inc. Copper interconnect methodology for enhanced electromigration resistance
US6130156A (en) * 1998-04-01 2000-10-10 Texas Instruments Incorporated Variable doping of metal plugs for enhanced reliability
SG79235A1 (en) 1998-07-16 2001-03-20 Univ Singapore Highly selective and complete interconnect metal line and via/contact hole filling by electroless plating
US6168704B1 (en) 1999-02-04 2001-01-02 Advanced Micro Device, Inc. Site-selective electrochemical deposition of copper
US6140241A (en) 1999-03-18 2000-10-31 Taiwan Semiconductor Manufacturing Company Multi-step electrochemical copper deposition process with improved filling capability
US6136707A (en) 1999-10-02 2000-10-24 Cohen; Uri Seed layers for interconnects and methods for fabricating such seed layers
US6228759B1 (en) 2000-05-02 2001-05-08 Advanced Micro Devices, Inc. Method of forming an alloy precipitate to surround interconnect to minimize electromigration

Also Published As

Publication number Publication date
WO2001097283A1 (en) 2001-12-20
TW492150B (en) 2002-06-21
EP1309993A1 (en) 2003-05-14
US6525425B1 (en) 2003-02-25

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