AU2001228524A1 - Alkali-containing aluminum borosilicate glass and utilization thereof - Google Patents

Alkali-containing aluminum borosilicate glass and utilization thereof

Info

Publication number
AU2001228524A1
AU2001228524A1 AU2001228524A AU2852401A AU2001228524A1 AU 2001228524 A1 AU2001228524 A1 AU 2001228524A1 AU 2001228524 A AU2001228524 A AU 2001228524A AU 2852401 A AU2852401 A AU 2852401A AU 2001228524 A1 AU2001228524 A1 AU 2001228524A1
Authority
AU
Australia
Prior art keywords
alkali
utilization
borosilicate glass
containing aluminum
aluminum borosilicate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
AU2001228524A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001228524A1 publication Critical patent/AU2001228524A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
AU2001228524A 2000-02-04 2001-01-31 Alkali-containing aluminum borosilicate glass and utilization thereof Withdrawn AU2001228524A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10005088 2000-02-04
DE10005088A DE10005088C1 (en) 2000-02-04 2000-02-04 Aluminoborosilicate glass used e.g. as substrate glass in thin layer photovoltaic cells contains oxides of silicon, boron, aluminum, sodium, potassium, calcium, strontium, barium, tin, zirconium, titanium and zinc
PCT/EP2001/001001 WO2001056941A1 (en) 2000-02-04 2001-01-31 Alkali-containing aluminum borosilicate glass and utilization thereof

Publications (1)

Publication Number Publication Date
AU2001228524A1 true AU2001228524A1 (en) 2001-08-14

Family

ID=7629932

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001228524A Withdrawn AU2001228524A1 (en) 2000-02-04 2001-01-31 Alkali-containing aluminum borosilicate glass and utilization thereof

Country Status (5)

Country Link
US (1) US20030087746A1 (en)
JP (1) JP4757424B2 (en)
AU (1) AU2001228524A1 (en)
DE (1) DE10005088C1 (en)
WO (1) WO2001056941A1 (en)

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JP5808069B2 (en) 2007-02-16 2015-11-10 日本電気硝子株式会社 Glass substrate for solar cell
JP5484220B2 (en) * 2007-02-27 2014-05-07 ＡｖａｎＳｔｒａｔｅ株式会社 Glass substrate for display device and display device
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DE102008005283B4 (en) * 2008-01-19 2009-10-29 Schott Solar Gmbh A method of making a transparent metal oxide coated glass sheet for a photovoltaic module and such a coated glass sheet
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US9637408B2 (en) * 2009-05-29 2017-05-02 Corsam Technologies Llc Fusion formable sodium containing glass
US9371247B2 (en) 2009-05-29 2016-06-21 Corsam Technologies Llc Fusion formable sodium free glass
US8647995B2 (en) 2009-07-24 2014-02-11 Corsam Technologies Llc Fusion formable silica and sodium containing glasses
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JP5537144B2 (en) * 2009-12-16 2014-07-02 ＡｖａｎＳｔｒａｔｅ株式会社 Glass composition and glass substrate for flat panel display using the same
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JP5751439B2 (en) * 2010-08-17 2015-07-22 日本電気硝子株式会社 Alkali-free glass
WO2012037242A2 (en) * 2010-09-14 2012-03-22 E. I. Du Pont De Nemours And Company Glass-coated flexible substrates for photovoltaic cells
US20120064352A1 (en) * 2010-09-14 2012-03-15 E. I. Du Pont De Nemours And Company Articles comprising a glass - flexible stainless steel composite layer
DE102010042945A1 (en) * 2010-10-26 2012-04-26 Schott Ag Transparent laminates
US10343946B2 (en) 2010-10-26 2019-07-09 Schott Ag Highly refractive thin glasses
US10308545B2 (en) 2010-10-26 2019-06-04 Schott Ag Highly refractive thin glasses
US20120192928A1 (en) * 2011-01-27 2012-08-02 Mark Francis Krol Laminated pv module package
EP2708518A4 (en) * 2011-05-10 2015-07-15 Nippon Electric Glass Co Glass plate for thin film solar cell
JP6410108B2 (en) * 2011-07-19 2018-10-24 日本電気硝子株式会社 Glass substrate
JP5737043B2 (en) * 2011-07-29 2015-06-17 旭硝子株式会社 Substrate glass and glass substrate
JP5850392B2 (en) * 2011-09-20 2016-02-03 日本電気硝子株式会社 Glass plate
KR101145729B1 (en) * 2011-11-11 2012-05-16 주식회사 금비 Glass composition
US9162919B2 (en) 2012-02-28 2015-10-20 Corning Incorporated High strain point aluminosilicate glasses
TWI564262B (en) 2012-02-29 2017-01-01 康寧公司 High cte potassium borosilicate core glasses and glass articles comprising the same
JP5648982B2 (en) * 2012-06-22 2015-01-07 日本電気硝子株式会社 Glass substrate for solar cell
JP5742084B2 (en) * 2012-06-22 2015-07-01 日本電気硝子株式会社 Glass substrate for solar cell
KR102225583B1 (en) 2013-04-29 2021-03-10 코닝 인코포레이티드 Photovoltaic module package
KR20220003632A (en) 2013-08-15 2022-01-10 코닝 인코포레이티드 Alkali-doped and alkali-free boroaluminosilicate glass
KR102255630B1 (en) 2013-08-15 2021-05-25 코닝 인코포레이티드 Intermediate to high cte glasses and glass articles comprising the same
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Also Published As

Publication number Publication date
DE10005088C1 (en) 2001-03-15
JP4757424B2 (en) 2011-08-24
US20030087746A1 (en) 2003-05-08
WO2001056941A1 (en) 2001-08-09
JP2003525830A (en) 2003-09-02

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