AU2001214162A1 - Switch device without dielectric barrier using superlattice - Google Patents

Switch device without dielectric barrier using superlattice

Info

Publication number
AU2001214162A1
AU2001214162A1 AU2001214162A AU1416201A AU2001214162A1 AU 2001214162 A1 AU2001214162 A1 AU 2001214162A1 AU 2001214162 A AU2001214162 A AU 2001214162A AU 1416201 A AU1416201 A AU 1416201A AU 2001214162 A1 AU2001214162 A1 AU 2001214162A1
Authority
AU
Australia
Prior art keywords
superlattice
switch device
dielectric barrier
dielectric
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001214162A
Inventor
Katsuyuki Tsukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001214162A1 publication Critical patent/AU2001214162A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
AU2001214162A 2000-11-17 2000-11-17 Switch device without dielectric barrier using superlattice Abandoned AU2001214162A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/008143 WO2002041412A1 (en) 2000-11-17 2000-11-17 Switch device without dielectric barrier using superlattice

Publications (1)

Publication Number Publication Date
AU2001214162A1 true AU2001214162A1 (en) 2002-05-27

Family

ID=11736696

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001214162A Abandoned AU2001214162A1 (en) 2000-11-17 2000-11-17 Switch device without dielectric barrier using superlattice

Country Status (6)

Country Link
US (3) US6995390B2 (en)
JP (1) JPWO2002041412A1 (en)
KR (1) KR20030051845A (en)
CN (1) CN1489794A (en)
AU (1) AU2001214162A1 (en)
WO (1) WO2002041412A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001214162A1 (en) * 2000-11-17 2002-05-27 Katsuyuki Tsukui Switch device without dielectric barrier using superlattice
US7610560B2 (en) * 2004-11-16 2009-10-27 Microsoft Corporation Methods for automated and semiautomated composition of visual sequences, flows, and flyovers based on content and context
JP2010050424A (en) * 2008-08-25 2010-03-04 Katsuyuki Tsukui Superconducting switching element
RU2599904C1 (en) * 2015-06-29 2016-10-20 федеральное государственное автономное образовательное учреждение высшего образования "Московский физико-технический институт (государственный университет)" METHOD OF MAKING DEVICE WITH SUBMICRON JOSEPHSON π-CONTACT
US10541271B2 (en) 2017-10-18 2020-01-21 Macronix International Co., Ltd. Superlattice-like switching devices
US10374009B1 (en) 2018-07-17 2019-08-06 Macronix International Co., Ltd. Te-free AsSeGe chalcogenides for selector devices and memory devices using same
US11289540B2 (en) 2019-10-15 2022-03-29 Macronix International Co., Ltd. Semiconductor device and memory cell
US11158787B2 (en) 2019-12-17 2021-10-26 Macronix International Co., Ltd. C—As—Se—Ge ovonic materials for selector devices and memory devices using same
US11362276B2 (en) 2020-03-27 2022-06-14 Macronix International Co., Ltd. High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application
CN112133720B (en) * 2020-09-24 2022-04-12 林和 Multidimensional multifunctional superconducting superlattice large-scale integrated circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2956299B2 (en) * 1991-08-30 1999-10-04 株式会社日立製作所 Magnetic detecting element, energy detecting element, and energy detecting method
JP2955415B2 (en) * 1991-11-25 1999-10-04 株式会社東芝 Superconducting element
JP3217703B2 (en) * 1995-09-01 2001-10-15 株式会社東芝 Magnetic device and magnetic sensor using the same
JPH1041124A (en) * 1996-07-18 1998-02-13 Katsuyuki Tsukui Superconducting device using modulation super structure
EP0823734A1 (en) * 1996-07-23 1998-02-11 DORNIER GmbH Josephson junction array device, and manufacture thereof
JPH10341044A (en) * 1997-06-06 1998-12-22 Katsuyuki Tsukui Switch device having no insulator barrier, using superlatticle
AU2001214162A1 (en) * 2000-11-17 2002-05-27 Katsuyuki Tsukui Switch device without dielectric barrier using superlattice

Also Published As

Publication number Publication date
JPWO2002041412A1 (en) 2004-03-25
US20030205786A1 (en) 2003-11-06
WO2002041412A9 (en) 2003-07-31
US7923717B2 (en) 2011-04-12
WO2002041412A1 (en) 2002-05-23
KR20030051845A (en) 2003-06-25
US20080103050A1 (en) 2008-05-01
CN1489794A (en) 2004-04-14
US6995390B2 (en) 2006-02-07
US7314765B2 (en) 2008-01-01
US20060249728A1 (en) 2006-11-09

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