ATE549436T1 - Kristallisierungsverfahren mit kontrolle der ausrichtung der kristallkörner - Google Patents

Kristallisierungsverfahren mit kontrolle der ausrichtung der kristallkörner

Info

Publication number
ATE549436T1
ATE549436T1 AT10152945T AT10152945T ATE549436T1 AT E549436 T1 ATE549436 T1 AT E549436T1 AT 10152945 T AT10152945 T AT 10152945T AT 10152945 T AT10152945 T AT 10152945T AT E549436 T1 ATE549436 T1 AT E549436T1
Authority
AT
Austria
Prior art keywords
substrate
orientation
control
crystal grains
temperature
Prior art date
Application number
AT10152945T
Other languages
English (en)
Inventor
Olivier Sicardy
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE549436T1 publication Critical patent/ATE549436T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/12—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by electrolysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
AT10152945T 2009-02-12 2010-02-08 Kristallisierungsverfahren mit kontrolle der ausrichtung der kristallkörner ATE549436T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0950892A FR2941968B1 (fr) 2009-02-12 2009-02-12 Procede de cristallisation avec maitrise de l'orientation des grains du cristal

Publications (1)

Publication Number Publication Date
ATE549436T1 true ATE549436T1 (de) 2012-03-15

Family

ID=41110538

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10152945T ATE549436T1 (de) 2009-02-12 2010-02-08 Kristallisierungsverfahren mit kontrolle der ausrichtung der kristallkörner

Country Status (5)

Country Link
US (1) US8586127B2 (de)
EP (1) EP2218805B1 (de)
JP (1) JP2010189257A (de)
AT (1) ATE549436T1 (de)
FR (1) FR2941968B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020205349A (ja) * 2019-06-17 2020-12-24 日本特殊陶業株式会社 静電チャックおよびその運転方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU966122A1 (ru) * 1980-08-20 1982-10-15 Тамбовский институт химического машиностроения Способ залечивани трещин в щелочно-галоидных кристаллах
JPH02239198A (ja) * 1989-03-08 1990-09-21 Nec Corp 転位制御方法
US6479625B1 (en) * 2002-05-28 2002-11-12 Agri-Nutrients Technology Group, Inc. Mechanical stress crystallization of thermoplastic polymers
JP2007242826A (ja) * 2006-03-08 2007-09-20 Mitsubishi Heavy Ind Ltd 成膜装置及び成膜方法
FR2911130B1 (fr) * 2007-01-05 2009-11-27 Saint Gobain Procede de depot de couche mince et produit obtenu

Also Published As

Publication number Publication date
FR2941968A1 (fr) 2010-08-13
JP2010189257A (ja) 2010-09-02
EP2218805A1 (de) 2010-08-18
FR2941968B1 (fr) 2012-01-06
US20100203233A1 (en) 2010-08-12
EP2218805B1 (de) 2012-03-14
US8586127B2 (en) 2013-11-19

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