ATE541315T1 - METHOD FOR PRODUCING A GROUP OF ELECTRONIC DEVICES - Google Patents

METHOD FOR PRODUCING A GROUP OF ELECTRONIC DEVICES

Info

Publication number
ATE541315T1
ATE541315T1 AT05804980T AT05804980T ATE541315T1 AT E541315 T1 ATE541315 T1 AT E541315T1 AT 05804980 T AT05804980 T AT 05804980T AT 05804980 T AT05804980 T AT 05804980T AT E541315 T1 ATE541315 T1 AT E541315T1
Authority
AT
Austria
Prior art keywords
conductive elements
electronic device
producing
electronic devices
group
Prior art date
Application number
AT05804980T
Other languages
German (de)
Inventor
Paul Cain
Original Assignee
Plastic Logic Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plastic Logic Ltd filed Critical Plastic Logic Ltd
Application granted granted Critical
Publication of ATE541315T1 publication Critical patent/ATE541315T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

A method of producing an array of electronic devices, the method including the steps of: forming one or more first conductive elements of a first electronic device on a substrate and one or more second conductive elements of a second electronic device on said substrate; and forming a layer of channel material over the substrate and the first and second conductive elements to provide a first channel for, in use, the movement of charge carriers between conductive elements of said first electronic device and a second channel for, in use, the movement of charge carriers between conductive elements of said second electronic device; wherein the method also includes the step (a) of using an irradiative technique to decrease in a single step the conductivity of one or more selected portions of the layer of channel material in one or more regions between the first and second conductive elements.
AT05804980T 2004-12-16 2005-12-16 METHOD FOR PRODUCING A GROUP OF ELECTRONIC DEVICES ATE541315T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0427563.2A GB0427563D0 (en) 2004-12-16 2004-12-16 A method of semiconductor patterning
PCT/GB2005/004903 WO2006064275A1 (en) 2004-12-16 2005-12-16 Electronic device array

Publications (1)

Publication Number Publication Date
ATE541315T1 true ATE541315T1 (en) 2012-01-15

Family

ID=34090151

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05804980T ATE541315T1 (en) 2004-12-16 2005-12-16 METHOD FOR PRODUCING A GROUP OF ELECTRONIC DEVICES

Country Status (8)

Country Link
US (1) US7947612B2 (en)
EP (1) EP1834358B1 (en)
JP (1) JP5438273B2 (en)
KR (1) KR101313885B1 (en)
CN (2) CN101111937B (en)
AT (1) ATE541315T1 (en)
GB (1) GB0427563D0 (en)
WO (1) WO2006064275A1 (en)

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JP5250981B2 (en) * 2007-02-21 2013-07-31 セイコーエプソン株式会社 Organic device manufacturing method and electronic device
US20080264682A1 (en) * 2007-04-24 2008-10-30 John Catron Substrate and negative imaging method for providing transparent conducting patterns
DE102009009442A1 (en) * 2009-02-18 2010-09-09 Polylc Gmbh & Co. Kg Organic electronic circuit
JP5656049B2 (en) 2010-05-26 2015-01-21 ソニー株式会社 Thin film transistor manufacturing method
GB2481190B (en) * 2010-06-04 2015-01-14 Plastic Logic Ltd Laser ablation
FR2970597B1 (en) * 2011-01-17 2013-01-04 Commissariat Energie Atomique METHOD OF ETCHING MICROELECTRIC LAYERS BY A LASER BEAM
TWI602303B (en) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
CN103348464B (en) * 2011-01-26 2016-01-13 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
US8829528B2 (en) 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
JP6033071B2 (en) * 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 Semiconductor device
US9672316B2 (en) 2013-07-17 2017-06-06 Arm Limited Integrated circuit manufacture using direct write lithography
US10918356B2 (en) 2016-11-22 2021-02-16 General Electric Company Ultrasound transducers having electrical traces on acoustic backing structures and methods of making the same
CN108627845B (en) * 2017-03-15 2021-05-28 信泰光学(深圳)有限公司 Circuit layout structure of laser driving circuit
JP7061763B2 (en) * 2018-01-15 2022-05-02 パイクリスタル株式会社 Electronic device
US11933863B2 (en) 2020-07-27 2024-03-19 Changxin Memory Technologies, Inc. Method for measuring shortest distance between capacitances and method for evaluating capacitance manufacture procedure
CN114001692B (en) * 2020-07-27 2023-04-07 长鑫存储技术有限公司 Method for measuring shortest distance between capacitors and method for evaluating capacitor manufacturing process
WO2023229007A1 (en) 2022-05-27 2023-11-30 株式会社アサカ理研 Method for extracting aluminum

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JP2845303B2 (en) * 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP3246189B2 (en) * 1994-06-28 2002-01-15 株式会社日立製作所 Semiconductor display device
US6069370A (en) * 1997-03-26 2000-05-30 Nec Corporation Field-effect transistor and fabrication method thereof and image display apparatus
US5824374A (en) * 1996-07-22 1998-10-20 Optical Coating Laboratory, Inc. In-situ laser patterning of thin film layers during sequential depositing
JPH11243209A (en) * 1998-02-25 1999-09-07 Seiko Epson Corp Transfer method of thin-film device, the thin-film device, thin-film integrated circuit device, active matrix substrate, liquid crystal display device, and electronic apparatus
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Also Published As

Publication number Publication date
JP5438273B2 (en) 2014-03-12
US7947612B2 (en) 2011-05-24
EP1834358B1 (en) 2012-01-11
CN101111937B (en) 2011-07-27
KR101313885B1 (en) 2013-10-01
CN101111937A (en) 2008-01-23
EP1834358A1 (en) 2007-09-19
KR20070093078A (en) 2007-09-17
GB0427563D0 (en) 2005-01-19
JP2008524839A (en) 2008-07-10
CN102299259B (en) 2015-11-25
US20080188092A1 (en) 2008-08-07
CN102299259A (en) 2011-12-28
WO2006064275A1 (en) 2006-06-22

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