ATE498024T1 - Verfahren zur strukturierung einer mesoporösen nanopartikelschicht - Google Patents

Verfahren zur strukturierung einer mesoporösen nanopartikelschicht

Info

Publication number
ATE498024T1
ATE498024T1 AT08806219T AT08806219T ATE498024T1 AT E498024 T1 ATE498024 T1 AT E498024T1 AT 08806219 T AT08806219 T AT 08806219T AT 08806219 T AT08806219 T AT 08806219T AT E498024 T1 ATE498024 T1 AT E498024T1
Authority
AT
Austria
Prior art keywords
layer
titanium dioxide
depositing
mesoporous nano
nano particulate
Prior art date
Application number
AT08806219T
Other languages
English (en)
Inventor
Julie Baker
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of ATE498024T1 publication Critical patent/ATE498024T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Light Receiving Elements (AREA)
AT08806219T 2007-09-26 2008-09-09 Verfahren zur strukturierung einer mesoporösen nanopartikelschicht ATE498024T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0718839.4A GB0718839D0 (en) 2007-09-26 2007-09-26 method of patterning a mesoporous nano particulate layer
PCT/GB2008/003054 WO2009040499A1 (en) 2007-09-26 2008-09-09 Method of patterning a mesoporous nano particulate layer

Publications (1)

Publication Number Publication Date
ATE498024T1 true ATE498024T1 (de) 2011-02-15

Family

ID=38701733

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08806219T ATE498024T1 (de) 2007-09-26 2008-09-09 Verfahren zur strukturierung einer mesoporösen nanopartikelschicht

Country Status (8)

Country Link
US (1) US8324008B2 (de)
EP (1) EP2193220B1 (de)
JP (1) JP2011502210A (de)
CN (1) CN101809194B (de)
AT (1) ATE498024T1 (de)
DE (1) DE602008004929D1 (de)
GB (1) GB0718839D0 (de)
WO (1) WO2009040499A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101779258A (zh) 2007-07-25 2010-07-14 聚合物华润有限公司 太阳能电池及其制备方法
WO2009156321A1 (en) * 2008-06-27 2009-12-30 Polymers Crc Ltd. Method for preparing dye sensitised solar cells
EP2743232A4 (de) 2011-08-08 2015-11-25 Ajinomoto Kk Poröse struktur und herstellungsverfahren dafür
LU93243B1 (en) * 2016-09-30 2018-04-05 Luxembourg Inst Science & Tech List Mesoporous hydrogenated titanium dioxide
FR3084275B1 (fr) 2018-07-30 2020-07-31 Centre Nat Rech Scient Tete et systeme compacts de depot en phase vapeur

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19530989C1 (de) * 1995-08-23 1997-03-13 Atotech Deutschland Gmbh Verfahren zum Filmstrippen
KR100456697B1 (ko) * 2002-07-30 2004-11-10 삼성전자주식회사 반도체 장치의 캐패시터 및 그 제조방법
GB0217990D0 (en) * 2002-08-02 2002-09-11 Imp College Innovations Ltd Low temperature metal oxide coating
TW200408323A (en) * 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high k metal oxides
JP4215475B2 (ja) * 2002-09-25 2009-01-28 株式会社パイロットコーポレーション 油性ボールペン用インキ組成物及びそのインキを用いた油性ボールペン
US7462774B2 (en) * 2003-05-21 2008-12-09 Nanosolar, Inc. Photovoltaic devices fabricated from insulating nanostructured template
US6943097B2 (en) * 2003-08-19 2005-09-13 International Business Machines Corporation Atomic layer deposition of metallic contacts, gates and diffusion barriers
DE102004034418B4 (de) * 2004-07-15 2009-06-25 Schott Ag Verfahren zur Herstellung struktuierter optischer Filterschichten auf Substraten
US20060138944A1 (en) * 2004-12-27 2006-06-29 Quantum Paper Addressable and printable emissive display
JP2006257551A (ja) * 2005-03-15 2006-09-28 Asm Internatl Nv Ａｌｄによる貴金属の促進された堆積
US7655860B2 (en) 2005-04-01 2010-02-02 North Carolina State University Nano-structured photovoltaic solar cell and related methods
US20070003813A1 (en) * 2005-06-30 2007-01-04 General Motors Corporation Stable conductive and hydrophilic fuel cell contact element
US20070251139A1 (en) * 2006-03-08 2007-11-01 Creeger Samuel M Pest control device and associated method
US7413982B2 (en) * 2006-03-29 2008-08-19 Eastman Kodak Company Process for atomic layer deposition
JP2008217959A (ja) * 2007-02-05 2008-09-18 Fuji Electric Device Technology Co Ltd 磁気記録媒体およびその製造方法
US8030212B2 (en) * 2007-09-26 2011-10-04 Eastman Kodak Company Process for selective area deposition of inorganic materials
US8017183B2 (en) * 2007-09-26 2011-09-13 Eastman Kodak Company Organosiloxane materials for selective area deposition of inorganic materials
US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide

Also Published As

Publication number Publication date
DE602008004929D1 (de) 2011-03-24
EP2193220A1 (de) 2010-06-09
US8324008B2 (en) 2012-12-04
JP2011502210A (ja) 2011-01-20
CN101809194A (zh) 2010-08-18
EP2193220B1 (de) 2011-02-09
WO2009040499A1 (en) 2009-04-02
US20100186800A1 (en) 2010-07-29
CN101809194B (zh) 2013-04-24
GB0718839D0 (en) 2007-11-07

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