ATE498024T1 - Verfahren zur strukturierung einer mesoporösen nanopartikelschicht - Google Patents
Verfahren zur strukturierung einer mesoporösen nanopartikelschichtInfo
- Publication number
- ATE498024T1 ATE498024T1 AT08806219T AT08806219T ATE498024T1 AT E498024 T1 ATE498024 T1 AT E498024T1 AT 08806219 T AT08806219 T AT 08806219T AT 08806219 T AT08806219 T AT 08806219T AT E498024 T1 ATE498024 T1 AT E498024T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- titanium dioxide
- depositing
- mesoporous nano
- nano particulate
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000002105 nanoparticle Substances 0.000 title 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 10
- 239000004408 titanium dioxide Substances 0.000 abstract 5
- 238000000151 deposition Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000000231 atomic layer deposition Methods 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
- Light Receiving Elements (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0718839.4A GB0718839D0 (en) | 2007-09-26 | 2007-09-26 | method of patterning a mesoporous nano particulate layer |
PCT/GB2008/003054 WO2009040499A1 (en) | 2007-09-26 | 2008-09-09 | Method of patterning a mesoporous nano particulate layer |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE498024T1 true ATE498024T1 (de) | 2011-02-15 |
Family
ID=38701733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08806219T ATE498024T1 (de) | 2007-09-26 | 2008-09-09 | Verfahren zur strukturierung einer mesoporösen nanopartikelschicht |
Country Status (8)
Country | Link |
---|---|
US (1) | US8324008B2 (de) |
EP (1) | EP2193220B1 (de) |
JP (1) | JP2011502210A (de) |
CN (1) | CN101809194B (de) |
AT (1) | ATE498024T1 (de) |
DE (1) | DE602008004929D1 (de) |
GB (1) | GB0718839D0 (de) |
WO (1) | WO2009040499A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009013285A1 (en) | 2007-07-25 | 2009-01-29 | Polymers Crc Ltd. | Solar cell and method for preparation thereof |
WO2009156321A1 (en) * | 2008-06-27 | 2009-12-30 | Polymers Crc Ltd. | Method for preparing dye sensitised solar cells |
JP5983610B2 (ja) | 2011-08-08 | 2016-09-06 | 味の素株式会社 | 多孔質構造体及びその製造方法 |
LU93243B1 (en) * | 2016-09-30 | 2018-04-05 | Luxembourg Inst Science & Tech List | Mesoporous hydrogenated titanium dioxide |
FR3084275B1 (fr) * | 2018-07-30 | 2020-07-31 | Centre Nat Rech Scient | Tete et systeme compacts de depot en phase vapeur |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19530989C1 (de) * | 1995-08-23 | 1997-03-13 | Atotech Deutschland Gmbh | Verfahren zum Filmstrippen |
KR100456697B1 (ko) * | 2002-07-30 | 2004-11-10 | 삼성전자주식회사 | 반도체 장치의 캐패시터 및 그 제조방법 |
GB0217990D0 (en) * | 2002-08-02 | 2002-09-11 | Imp College Innovations Ltd | Low temperature metal oxide coating |
TW200408323A (en) * | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high k metal oxides |
JP4215475B2 (ja) * | 2002-09-25 | 2009-01-28 | 株式会社パイロットコーポレーション | 油性ボールペン用インキ組成物及びそのインキを用いた油性ボールペン |
US7462774B2 (en) * | 2003-05-21 | 2008-12-09 | Nanosolar, Inc. | Photovoltaic devices fabricated from insulating nanostructured template |
US6943097B2 (en) * | 2003-08-19 | 2005-09-13 | International Business Machines Corporation | Atomic layer deposition of metallic contacts, gates and diffusion barriers |
DE102004034418B4 (de) * | 2004-07-15 | 2009-06-25 | Schott Ag | Verfahren zur Herstellung struktuierter optischer Filterschichten auf Substraten |
US20060138944A1 (en) * | 2004-12-27 | 2006-06-29 | Quantum Paper | Addressable and printable emissive display |
JP2006257551A (ja) * | 2005-03-15 | 2006-09-28 | Asm Internatl Nv | Aldによる貴金属の促進された堆積 |
US7655860B2 (en) | 2005-04-01 | 2010-02-02 | North Carolina State University | Nano-structured photovoltaic solar cell and related methods |
US20070003813A1 (en) * | 2005-06-30 | 2007-01-04 | General Motors Corporation | Stable conductive and hydrophilic fuel cell contact element |
US20070251139A1 (en) * | 2006-03-08 | 2007-11-01 | Creeger Samuel M | Pest control device and associated method |
US7413982B2 (en) * | 2006-03-29 | 2008-08-19 | Eastman Kodak Company | Process for atomic layer deposition |
JP2008217959A (ja) * | 2007-02-05 | 2008-09-18 | Fuji Electric Device Technology Co Ltd | 磁気記録媒体およびその製造方法 |
US7972898B2 (en) * | 2007-09-26 | 2011-07-05 | Eastman Kodak Company | Process for making doped zinc oxide |
US8017183B2 (en) * | 2007-09-26 | 2011-09-13 | Eastman Kodak Company | Organosiloxane materials for selective area deposition of inorganic materials |
US8030212B2 (en) * | 2007-09-26 | 2011-10-04 | Eastman Kodak Company | Process for selective area deposition of inorganic materials |
-
2007
- 2007-09-26 GB GBGB0718839.4A patent/GB0718839D0/en not_active Ceased
-
2008
- 2008-09-09 EP EP08806219A patent/EP2193220B1/de not_active Not-in-force
- 2008-09-09 WO PCT/GB2008/003054 patent/WO2009040499A1/en active Application Filing
- 2008-09-09 AT AT08806219T patent/ATE498024T1/de not_active IP Right Cessation
- 2008-09-09 CN CN2008801091091A patent/CN101809194B/zh not_active Expired - Fee Related
- 2008-09-09 US US12/677,132 patent/US8324008B2/en not_active Expired - Fee Related
- 2008-09-09 DE DE602008004929T patent/DE602008004929D1/de active Active
- 2008-09-09 JP JP2010526351A patent/JP2011502210A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CN101809194B (zh) | 2013-04-24 |
EP2193220A1 (de) | 2010-06-09 |
CN101809194A (zh) | 2010-08-18 |
GB0718839D0 (en) | 2007-11-07 |
US20100186800A1 (en) | 2010-07-29 |
US8324008B2 (en) | 2012-12-04 |
EP2193220B1 (de) | 2011-02-09 |
DE602008004929D1 (de) | 2011-03-24 |
WO2009040499A1 (en) | 2009-04-02 |
JP2011502210A (ja) | 2011-01-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |