ATE496412T1 - Laserabstrahlungsvorrichtung mit verteilten reflektoren - Google Patents

Laserabstrahlungsvorrichtung mit verteilten reflektoren

Info

Publication number
ATE496412T1
ATE496412T1 AT07105929T AT07105929T ATE496412T1 AT E496412 T1 ATE496412 T1 AT E496412T1 AT 07105929 T AT07105929 T AT 07105929T AT 07105929 T AT07105929 T AT 07105929T AT E496412 T1 ATE496412 T1 AT E496412T1
Authority
AT
Austria
Prior art keywords
control signal
distributed reflector
electrical control
resonant reflectivity
laser radiation
Prior art date
Application number
AT07105929T
Other languages
English (en)
Inventor
Helene Debregeas-Sillard
Original Assignee
Alcatel Lucent
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Lucent filed Critical Alcatel Lucent
Application granted granted Critical
Publication of ATE496412T1 publication Critical patent/ATE496412T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Surgery Devices (AREA)
  • Lasers (AREA)
  • Optical Communication System (AREA)
AT07105929T 2006-04-28 2007-04-11 Laserabstrahlungsvorrichtung mit verteilten reflektoren ATE496412T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0651510A FR2900509B1 (fr) 2006-04-28 2006-04-28 Dispositif d'emission laser a reflecteurs distribues

Publications (1)

Publication Number Publication Date
ATE496412T1 true ATE496412T1 (de) 2011-02-15

Family

ID=37621921

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07105929T ATE496412T1 (de) 2006-04-28 2007-04-11 Laserabstrahlungsvorrichtung mit verteilten reflektoren

Country Status (4)

Country Link
EP (1) EP1850429B1 (de)
AT (1) ATE496412T1 (de)
DE (1) DE602007012012D1 (de)
FR (1) FR2900509B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2795337A1 (en) * 2010-04-21 2011-10-27 Aurora Networks, Inc. Chirp compensation and sbs suppression using a multi-section laser
SE535248C2 (sv) 2010-10-06 2012-06-05 Syntune Ab Förfarande för att kalibrera en avstämbar laser
US9209601B2 (en) 2011-08-26 2015-12-08 Oclaro Technology Ltd Monolithically integrated tunable semiconductor laser
GB2493988B (en) * 2011-08-26 2016-01-13 Oclaro Technology Ltd Monolithically integrated tunable semiconductor laser
EP3192136B1 (de) * 2014-09-08 2020-10-07 Lumentum Technology UK Limited Monolithisch integrierter abstimmbarer halbleiterlaser
US11233375B2 (en) * 2019-10-01 2022-01-25 Ii-Vi Delaware, Inc. Two-kappa DBR laser

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5088097A (en) * 1990-04-04 1992-02-11 Canon Kabushiki Kaisha Semiconductor laser element capable of changing emission wavelength, and method of driving the same
FR2737942B1 (fr) * 1995-08-18 1997-11-07 Delorme Franck Composant d'emission laser accordable en longueur d'onde par variation d'absorption
GB2381123B (en) * 2001-10-17 2005-02-23 Marconi Optical Components Ltd Tuneable laser

Also Published As

Publication number Publication date
FR2900509A1 (fr) 2007-11-02
EP1850429B1 (de) 2011-01-19
FR2900509B1 (fr) 2008-06-06
DE602007012012D1 (de) 2011-03-03
EP1850429A1 (de) 2007-10-31

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties