ATE442688T1 - Leistungs-halbleiterlaser mit geringer divergenz und geringem astigmatismus und verfahren zu seiner herstellung - Google Patents

Leistungs-halbleiterlaser mit geringer divergenz und geringem astigmatismus und verfahren zu seiner herstellung

Info

Publication number
ATE442688T1
ATE442688T1 AT05819221T AT05819221T ATE442688T1 AT E442688 T1 ATE442688 T1 AT E442688T1 AT 05819221 T AT05819221 T AT 05819221T AT 05819221 T AT05819221 T AT 05819221T AT E442688 T1 ATE442688 T1 AT E442688T1
Authority
AT
Austria
Prior art keywords
low
power semiconductor
semiconductor laser
producing same
divergence
Prior art date
Application number
AT05819221T
Other languages
English (en)
Inventor
Michel Krakowski
Michel Calligaro
Original Assignee
Thales Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales Sa filed Critical Thales Sa
Application granted granted Critical
Publication of ATE442688T1 publication Critical patent/ATE442688T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
AT05819221T 2004-12-22 2005-12-16 Leistungs-halbleiterlaser mit geringer divergenz und geringem astigmatismus und verfahren zu seiner herstellung ATE442688T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0413745A FR2879841B1 (fr) 2004-12-22 2004-12-22 Laser semiconducteur de puissance a faibles divergence et astigmatisme
PCT/EP2005/056878 WO2006067098A1 (fr) 2004-12-22 2005-12-16 Laser semiconducteur de puissance a faibles divergence et astigmatisme, et son procede de fabrication

Publications (1)

Publication Number Publication Date
ATE442688T1 true ATE442688T1 (de) 2009-09-15

Family

ID=34954993

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05819221T ATE442688T1 (de) 2004-12-22 2005-12-16 Leistungs-halbleiterlaser mit geringer divergenz und geringem astigmatismus und verfahren zu seiner herstellung

Country Status (7)

Country Link
US (1) US7713856B2 (de)
EP (1) EP1829174B1 (de)
AT (1) ATE442688T1 (de)
DE (1) DE602005016599D1 (de)
ES (1) ES2332234T3 (de)
FR (1) FR2879841B1 (de)
WO (1) WO2006067098A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7309519B2 (ja) * 2019-08-13 2023-07-18 日本ルメンタム株式会社 半導体光素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2430653A1 (fr) 1978-07-04 1980-02-01 Thomson Csf Resistance au silicium a tres faible coefficient de temperature
US4803691A (en) * 1985-05-07 1989-02-07 Spectra Diode Laboratories, Inc. Lateral superradiance suppressing diode laser bar
FR2596529B1 (fr) 1986-03-28 1988-05-13 Thomson Csf Guide d'onde optique en materiau semiconducteur, laser appliquant ce guide d'onde et procede de realisation
FR2631488B1 (fr) 1988-05-10 1990-07-27 Thomson Hybrides Microondes Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication
US5214661A (en) 1989-06-06 1993-05-25 Thomson - Csf Optoelectric device on semi-insulator substrate and methods for making such a device
FR2647967B1 (fr) 1989-06-06 1991-08-16 Thomson Csf Dispositif optoelectronique sur substrat semi-isolant et procede de realisation d'un tel dispositif
EP0641049B1 (de) * 1993-08-31 1998-10-28 Fujitsu Limited Optischer Halbleitervorrichtung und Herstellungsverfahren
GB2317744B (en) * 1996-09-27 2001-11-21 Marconi Gec Ltd Improvements in and relating to lasers
DE59702522D1 (de) * 1996-11-11 2000-11-30 Contraves Space Ag Zuerich Verfahren und Vorrichtung zur Modulation eines optischen Trägers durch einen Halbleiterverstärker
US7027475B1 (en) * 2000-04-11 2006-04-11 Nuvonyx, Inc. Tailored index single mode optical amplifiers and devices and systems including same
US6317445B1 (en) * 2000-04-11 2001-11-13 The Board Of Trustees Of The University Of Illinois Flared and tapered rib waveguide semiconductor laser and method for making same
FR2820891B1 (fr) * 2001-02-13 2004-08-27 Cit Alcatel Laser semi conducteur a ruban enterre et procede de fabrication
GB0127573D0 (en) * 2001-11-17 2002-01-09 Corning Inc Semiconductor optical devices and methods of making them

Also Published As

Publication number Publication date
US7713856B2 (en) 2010-05-11
DE602005016599D1 (de) 2009-10-22
US20080225919A1 (en) 2008-09-18
EP1829174B1 (de) 2009-09-09
WO2006067098A1 (fr) 2006-06-29
FR2879841B1 (fr) 2008-10-24
EP1829174A1 (de) 2007-09-05
ES2332234T3 (es) 2010-01-29
FR2879841A1 (fr) 2006-06-23

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties