ATE442687T1 - Oberflächenemittierender laser mit integriertem absorber - Google Patents

Oberflächenemittierender laser mit integriertem absorber

Info

Publication number
ATE442687T1
ATE442687T1 AT05731285T AT05731285T ATE442687T1 AT E442687 T1 ATE442687 T1 AT E442687T1 AT 05731285 T AT05731285 T AT 05731285T AT 05731285 T AT05731285 T AT 05731285T AT E442687 T1 ATE442687 T1 AT E442687T1
Authority
AT
Austria
Prior art keywords
absorber
surface emitting
emitting laser
integrated absorber
integrated
Prior art date
Application number
AT05731285T
Other languages
English (en)
Inventor
Ian Young
Ursula Keller
Heiko Unold
Rudiger Paschotta
Silke Shon
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE442687T1 publication Critical patent/ATE442687T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
    • G06F1/10—Distribution of clock signals, e.g. skew
    • G06F1/105—Distribution of clock signals, e.g. skew in which the distribution is at least partially optical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0615—Shape of end-face
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094084—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light with pump light recycling, i.e. with reinjection of the unused pump light, e.g. by reflectors or circulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
AT05731285T 2004-03-31 2005-03-25 Oberflächenemittierender laser mit integriertem absorber ATE442687T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/814,050 US20060029112A1 (en) 2004-03-31 2004-03-31 Surface emitting laser with an integrated absorber
PCT/US2005/010400 WO2005098573A1 (en) 2004-03-31 2005-03-25 Surface emitting laser with an integrated absorber

Publications (1)

Publication Number Publication Date
ATE442687T1 true ATE442687T1 (de) 2009-09-15

Family

ID=34964379

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05731285T ATE442687T1 (de) 2004-03-31 2005-03-25 Oberflächenemittierender laser mit integriertem absorber

Country Status (7)

Country Link
US (2) US20060029112A1 (de)
EP (1) EP1735681B1 (de)
JP (1) JP5237631B2 (de)
CN (1) CN1950781B (de)
AT (1) ATE442687T1 (de)
DE (1) DE602005016536D1 (de)
WO (1) WO2005098573A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7860143B2 (en) * 2004-04-30 2010-12-28 Finisar Corporation Metal-assisted DBRs for thermal management in VCSELs
US7309953B2 (en) * 2005-01-24 2007-12-18 Principia Lightworks, Inc. Electron beam pumped laser light source for projection television
US7526009B2 (en) * 2005-05-07 2009-04-28 Samsung Electronics Co., Ltd. End-pumped vertical external cavity surface emitting laser
KR101100434B1 (ko) * 2005-05-07 2011-12-30 삼성전자주식회사 후방 광펌핑 방식의 외부 공진기형 면발광 레이저
DE102005056949B4 (de) * 2005-09-30 2013-08-22 Osram Opto Semiconductors Gmbh Optisch gepumpter oberflächenemittierender Halbleiterlaser und optische Projektionsvorrichtung mit solch einem Halbleiterlaser
WO2007071809A1 (en) * 2005-12-22 2007-06-28 Reflekron Oy Semiconductor device and method to fabricate thereof
US7801197B2 (en) * 2006-06-16 2010-09-21 Epicrystals Oy High power laser device
EP1870972A1 (de) * 2006-06-22 2007-12-26 Fujifilm Corporation Modengekoppelte Laservorrichtung
JP2008028379A (ja) * 2006-06-22 2008-02-07 Fujifilm Corp モードロックレーザ装置
US8102893B2 (en) * 2007-06-14 2012-01-24 Necsel Intellectual Property Multiple emitter VECSEL
DE102008030818B4 (de) * 2008-06-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenemittierender Halbleiterlaser mit mehreren aktiven Zonen
EP2577818B1 (de) 2010-05-28 2020-07-15 Daniel Kopf Ultrakurzpuls-mikrochiplaser, halbleiterlaser, lasersystem und pumpverfahren für dünne lasermedien
US8432551B2 (en) 2010-08-06 2013-04-30 Honeywell International Inc. Neon or iodine absorption enhanced hene ring laser gyroscope
WO2012068563A1 (en) * 2010-11-19 2012-05-24 Trilumina Corporation Optical pumping of solid-state laser material using addressable laser array
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US8687198B2 (en) 2011-09-20 2014-04-01 Honeywell International Inc. Coupled cavity dispersion enhanced ring laser gyroscope
CN102593720A (zh) * 2012-03-19 2012-07-18 中国科学院福建物质结构研究所 基于量子点-量子阱混合结构的锁模半导体激光器
US9124062B2 (en) * 2012-03-22 2015-09-01 Palo Alto Research Center Incorporated Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector
US9112331B2 (en) 2012-03-22 2015-08-18 Palo Alto Research Center Incorporated Surface emitting laser incorporating third reflector
US9065241B2 (en) * 2012-05-11 2015-06-23 Massachusetts Institute Of Technology Methods, systems, and apparatus for high energy optical-pulse amplification at high average power
US9112332B2 (en) 2012-06-14 2015-08-18 Palo Alto Research Center Incorporated Electron beam pumped vertical cavity surface emitting laser
JP6245629B2 (ja) * 2013-03-26 2017-12-13 大学共同利用機関法人自然科学研究機構 半導体レーザー励起固体レーザー装置を利用する車載式点火装置
LT3202001T (lt) 2014-10-02 2019-09-10 ETH ZĆ¼rich Impulsinis lazeris
JP6715931B2 (ja) * 2015-11-19 2020-07-01 エヌライト， インコーポレイテッドＮｌｉｇｈｔ， Ｉｎｃ． レーザーフォールトトレランスおよびセルフキャリブレーションシステム
WO2018093435A2 (en) * 2016-09-12 2018-05-24 Arizona Board Of Regents On Behalf Of The University Of Arizona Nonequilibrium pulsed femtosecond semiconductor disk laser with non-equidistant mqw structure
WO2018141083A1 (zh) * 2017-02-03 2018-08-09 华为技术有限公司 光电转换装置
EP3419050A1 (de) 2017-06-23 2018-12-26 ams International AG Strahlungsgehärtetes gehäuse für eine elektronische vorrichtung und verfahren zur herstellung eines strahlungsgehärteten gehäuses
WO2019017044A1 (ja) * 2017-07-18 2019-01-24 ソニー株式会社 発光素子及び発光素子アレイ
GB202009952D0 (en) * 2020-06-30 2020-08-12 Ams Int Ag Light source
EP4131674A1 (de) 2021-08-06 2023-02-08 ETH Zurich Strahlungsquelle

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4860296A (en) * 1983-12-30 1989-08-22 American Telephone And Telegraph Company, At&T Bell Laboratories Laser controlled by a multiple-layer heterostructure
US4959540A (en) * 1989-05-15 1990-09-25 International Business Machines Corporation Optical clock system with optical time delay means
US5216263A (en) * 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
US5062115A (en) * 1990-12-28 1991-10-29 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes
US5287376A (en) * 1992-12-14 1994-02-15 Xerox Corporation Independently addressable semiconductor diode lasers with integral lowloss passive waveguides
US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
US5574738A (en) * 1995-06-07 1996-11-12 Honeywell Inc. Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser
US5724375A (en) * 1996-07-17 1998-03-03 W. L. Gore & Associates, Inc. Vertical cavity surface emitting laser with enhanced second harmonic generation and method of making same
FR2751796B1 (fr) * 1996-07-26 1998-08-28 Commissariat Energie Atomique Microlaser soilde, a pompage optique par laser semi-conducteur a cavite verticale
US5991318A (en) * 1998-10-26 1999-11-23 Coherent, Inc. Intracavity frequency-converted optically-pumped semiconductor laser
US6098264A (en) * 1999-02-17 2000-08-08 Eastman Kodak Company Method of assembling laser and modulator unit
US6735234B1 (en) * 2000-02-11 2004-05-11 Giga Tera Ag Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser
US6418152B1 (en) * 2000-02-18 2002-07-09 Trw Inc. Multi-amplifier, high power mode locked laser
US6741619B1 (en) * 2000-04-03 2004-05-25 Massachusetts Institute Of Technology Semiconductor elements for stabilizing laser output
US20020067882A1 (en) * 2000-05-26 2002-06-06 Guilfoyle Peter S. Virtual optoelectronic crossbar switch
KR100667743B1 (ko) * 2000-10-04 2007-01-12 삼성전자주식회사 마이크로 렌즈 일체형 표면광 레이저
KR100393057B1 (ko) * 2000-10-20 2003-07-31 삼성전자주식회사 마이크로 렌즈 일체형 표면광 레이저
US6680956B2 (en) * 2001-02-15 2004-01-20 Aculight Corporation External frequency conversion of surface-emitting diode lasers
US6710911B2 (en) * 2001-03-02 2004-03-23 Evident Technologies Optical wavelength converter
JP4095306B2 (ja) * 2002-01-18 2008-06-04 株式会社リコー 半導体発光素子およびその製造方法および光伝送システム
CA2456445A1 (en) * 2001-08-21 2003-03-06 Denis J. Gendron Suppression of mode-beating noise in a q-switched pulsed laser using novel q-switch device
JP2003121611A (ja) * 2001-10-16 2003-04-23 Canon Inc Ａｌを含む半導体材料からなるレンズ、それを用いた面型光素子及び、レンズの製造方法
US20030113078A1 (en) * 2001-12-13 2003-06-19 Tatum Jimmy A. Methods, systems and means for providing data communications between data equipment
JP3830858B2 (ja) * 2002-01-08 2006-10-11 独立行政法人科学技術振興機構 超高速・広い波長帯域の光可飽和吸収半導体、それを用いた半導体装置及び導波路型光−光スイッチ
US6628695B1 (en) * 2002-03-07 2003-09-30 The Board Of Trustees Of The Leland Stanford Junior University Monolithically integrated mode-locked vertical cavity surface emitting laser (VCSEL)
JP2004063957A (ja) * 2002-07-31 2004-02-26 Hitachi Ltd 半導体量子ドットを有する半導体部材の製造方法、半導体レーザ及びそれを用いた光モジュール
US7339963B2 (en) * 2002-11-27 2008-03-04 International Business Machines Corporation High speed data channel including a CMOS VCSEL driver and a high performance photodetector and CMOS photoreceiver
GB2399941A (en) * 2003-03-24 2004-09-29 Univ Strathclyde Vertical cavity semiconductor optical devices
WO2004110943A2 (en) * 2003-06-19 2004-12-23 Elop Electro-Optics Industries Ltd. Glass ceramics for laser systems
US8040929B2 (en) * 2004-03-25 2011-10-18 Imra America, Inc. Optical parametric amplification, optical parametric generation, and optical pumping in optical fibers systems

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CN1950781B (zh) 2011-04-20
JP2007528130A (ja) 2007-10-04
DE602005016536D1 (de) 2009-10-22
WO2005098573A1 (en) 2005-10-20
JP5237631B2 (ja) 2013-07-17
US20060029112A1 (en) 2006-02-09
US20070189350A1 (en) 2007-08-16
CN1950781A (zh) 2007-04-18
EP1735681A1 (de) 2006-12-27
EP1735681B1 (de) 2009-09-09
US7729393B2 (en) 2010-06-01

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