ATE429462T1 - Verfahren zur herstellung einer härtbaren zusammensetzung mit niedrigem wärmeausdehnungskoeffizienten, integrierte schaltung, härtbare zusammensetzung und damit hergestellte integrierte schaltung - Google Patents

Verfahren zur herstellung einer härtbaren zusammensetzung mit niedrigem wärmeausdehnungskoeffizienten, integrierte schaltung, härtbare zusammensetzung und damit hergestellte integrierte schaltung

Info

Publication number
ATE429462T1
ATE429462T1 AT06077248T AT06077248T ATE429462T1 AT E429462 T1 ATE429462 T1 AT E429462T1 AT 06077248 T AT06077248 T AT 06077248T AT 06077248 T AT06077248 T AT 06077248T AT E429462 T1 ATE429462 T1 AT E429462T1
Authority
AT
Austria
Prior art keywords
curable composition
integrated circuit
nanoparticle composition
producing
thermal expansion
Prior art date
Application number
AT06077248T
Other languages
English (en)
Inventor
Rafil A Basheer
Mohammed Bouguettaya
Derek B Workman
Arun K Chaudhuri
Original Assignee
Delphi Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delphi Tech Inc filed Critical Delphi Tech Inc
Application granted granted Critical
Publication of ATE429462T1 publication Critical patent/ATE429462T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/011—Nanostructured additives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01063—Europium [Eu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
AT06077248T 2005-12-23 2006-12-14 Verfahren zur herstellung einer härtbaren zusammensetzung mit niedrigem wärmeausdehnungskoeffizienten, integrierte schaltung, härtbare zusammensetzung und damit hergestellte integrierte schaltung ATE429462T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/317,661 US20060199301A1 (en) 2005-03-07 2005-12-23 Methods of making a curable composition having low coefficient of thermal expansion and an integrated circuit and a curable composition and integrated circuit made there from

Publications (1)

Publication Number Publication Date
ATE429462T1 true ATE429462T1 (de) 2009-05-15

Family

ID=37963673

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06077248T ATE429462T1 (de) 2005-12-23 2006-12-14 Verfahren zur herstellung einer härtbaren zusammensetzung mit niedrigem wärmeausdehnungskoeffizienten, integrierte schaltung, härtbare zusammensetzung und damit hergestellte integrierte schaltung

Country Status (4)

Country Link
US (1) US20060199301A1 (de)
EP (1) EP1801151B1 (de)
AT (1) ATE429462T1 (de)
DE (1) DE602006006402D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6899960B2 (en) * 2002-03-22 2005-05-31 Intel Corporation Microelectronic or optoelectronic package having a polybenzoxazine-based film as an underfill material
US6863825B2 (en) 2003-01-29 2005-03-08 Union Oil Company Of California Process for removing arsenic from aqueous streams
US7504460B2 (en) * 2005-03-07 2009-03-17 Delphi Technologies, Inc. Composition of aromatic or cycloaliphatic amine-derived polyepoxide and polyamine
US7498197B2 (en) * 2006-09-13 2009-03-03 Delphi Technologies, Inc. Silica nanoparticles thermoset resin compositions
US8066874B2 (en) 2006-12-28 2011-11-29 Molycorp Minerals, Llc Apparatus for treating a flow of an aqueous solution containing arsenic
US7601429B2 (en) * 2007-02-07 2009-10-13 Mitsubishi Gas Chemical Company, Inc. Prepreg and laminate
US8252087B2 (en) 2007-10-31 2012-08-28 Molycorp Minerals, Llc Process and apparatus for treating a gas containing a contaminant
US8349764B2 (en) 2007-10-31 2013-01-08 Molycorp Minerals, Llc Composition for treating a fluid
WO2010005710A1 (en) * 2008-06-16 2010-01-14 3M Innovative Properties Company Toughened curable compositions
US8603624B2 (en) * 2009-11-20 2013-12-10 Panasonic Corporation Prepreg, laminate, metal clad laminate, circuit board, and circuit board for LED mounting
JP2012089750A (ja) * 2010-10-21 2012-05-10 Hitachi Chem Co Ltd 半導体封止充てん用熱硬化性樹脂組成物及び半導体装置
US9233863B2 (en) 2011-04-13 2016-01-12 Molycorp Minerals, Llc Rare earth removal of hydrated and hydroxyl species
US8388744B1 (en) * 2011-08-30 2013-03-05 General Electric Company Systems and methods for using a boehmite bond-coat with polyimide membranes for gas separation
US8963340B2 (en) * 2011-09-13 2015-02-24 International Business Machines Corporation No flow underfill or wafer level underfill and solder columns
WO2013048473A1 (en) * 2011-09-30 2013-04-04 Intel Corporation Fluxing-encapsulant material for microelectronic packages assembled via thermal compression bonding process
CA2941859A1 (en) 2014-03-07 2015-09-11 Molycorp Minerals, Llc Cerium (iv) oxide with exceptional arsenic removal properties

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286572A (en) * 1988-11-28 1994-02-15 International Business Machines Corporation Planarizing ladder-type silsequioxane polymer insulation layer
JPH0412595A (ja) * 1990-05-02 1992-01-17 Mitsubishi Petrochem Co Ltd 導電性ペースト組成物
US5811317A (en) * 1995-08-25 1998-09-22 Texas Instruments Incorporated Process for reflow bonding a semiconductor die to a substrate and the product produced by the product
US6399178B1 (en) * 1998-07-20 2002-06-04 Amerasia International Technology, Inc. Rigid adhesive underfill preform, as for a flip-chip device
US6369183B1 (en) * 1998-08-13 2002-04-09 Wm. Marsh Rice University Methods and materials for fabrication of alumoxane polymers
US6376100B1 (en) * 1999-06-09 2002-04-23 Shin Etsu-Chemical Co., Ltd. Flip-chip type semiconductor device underfill material and flip-chip type semiconductor device
US6224846B1 (en) * 1999-08-21 2001-05-01 Condea Vista Company Method for making modified boehmite alumina
KR100889101B1 (ko) * 2000-02-15 2009-03-17 히다치 가세고교 가부시끼가이샤 접착제 조성물, 그 제조 방법, 이것을 이용한 접착 필름,반도체 탑재용 기판 및 반도체 장치
US6927301B2 (en) * 2000-10-27 2005-08-09 The Regents Of The University Of Michigan Well-defined nanosized building blocks for organic/inorganic nanocomposites
US6924091B2 (en) * 2001-01-05 2005-08-02 Fuji Photo Film Co., Ltd. Silver halide photographic lightsensitive material
US6724091B1 (en) * 2002-10-24 2004-04-20 Intel Corporation Flip-chip system and method of making same
US6610559B2 (en) * 2001-11-16 2003-08-26 Indium Corporation Of America Integrated void-free process for assembling a solder bumped chip
US7060634B2 (en) * 2002-01-17 2006-06-13 Silecs Oy Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
US6887517B1 (en) * 2002-06-12 2005-05-03 Tda Research Surface modified particles by multi-step Michael-type addition and process for the preparation thereof
US20040102529A1 (en) * 2002-11-22 2004-05-27 Campbell John Robert Functionalized colloidal silica, dispersions and methods made thereby
US7088010B2 (en) * 2003-12-18 2006-08-08 Intel Corporation Chip packaging compositions, packages and systems made therewith, and methods of making same
US7875686B2 (en) * 2004-08-18 2011-01-25 Promerus Llc Polycycloolefin polymeric compositions for semiconductor applications
US7332822B2 (en) * 2004-11-12 2008-02-19 Delphi Technologies, Inc. Flip chip system with organic/inorganic hybrid underfill composition
US7504460B2 (en) * 2005-03-07 2009-03-17 Delphi Technologies, Inc. Composition of aromatic or cycloaliphatic amine-derived polyepoxide and polyamine

Also Published As

Publication number Publication date
EP1801151A1 (de) 2007-06-27
DE602006006402D1 (de) 2009-06-04
US20060199301A1 (en) 2006-09-07
EP1801151B1 (de) 2009-04-22

Similar Documents

Publication Publication Date Title
ATE429462T1 (de) Verfahren zur herstellung einer härtbaren zusammensetzung mit niedrigem wärmeausdehnungskoeffizienten, integrierte schaltung, härtbare zusammensetzung und damit hergestellte integrierte schaltung
ATE407970T1 (de) Heterophasische polymerzusammensetzung und verfahren zu ihrer herstellung
ATE400605T1 (de) Organisch/anorganische nanoverbundgegenstände erhältlich durch extrusion
DE602004029350D1 (de) Mineralfaserplatten schlichtezusammensetzung mit einem polysaure und einer polyamin, verfahren zur herstellung sowie deren produkte
BRPI0603049A (pt) composição biodegradável de copolìmero de enxerto de amido-óleo vegetal que é uma mistura misturada de modo reativo, e processo para produzir uma composição biodegradável de copolìmero de enxerto amido-óleo vegetal
BRPI0406472A (pt) Método e sistema para produzir um objeto por fabricação de forma livre sólida
DE60224053D1 (de) Schwefeladditive für fahrbahnbindemittel und herstellungsverfahren
DE602004005731D1 (de) Verfahren zur herstellung einer plattenförmigen struktur insbesondere aus silizium, verwendung des verfahrens und der so hergestellten plattenförmigen struktur insbesondere aus silizium
BRPI0417672A (pt) processos para produzir composições de vìrus estáveis em armazenamento, composições de vìrus e imunogênicas
BRPI0513663A (pt) composição de procatalisador ziegler-natta, método para preparar a composição de procatalisador e processo para produzir um polìmero
EP1612234A4 (de) Herstellungsverfahren für eine harzzusammensetzung und auf diese weise hergestellte harzzusammensetzung
ATE384098T1 (de) Verfahren zur herstellung einer zusammensetzung und nanokomposite daraus
ATE508160T1 (de) Verfahren zur herstellung von schaumstoffplatten
ATE535582T1 (de) Beschichtungszusammensetzung mit polydextrose, verfahren zu ihrer herstellung und ihre verwendung zur beschichtung einnehmbarer feststoffe
DE60312731D1 (de) Verfahren zur herstellung einer polymerzusammensetzung und eines flammverzögerungsmittels auf melaminbasis
DE502004001971D1 (de) Wässrige zusammensetzung und deren verwendung zur papierherstellung
DE50108707D1 (de) Verfahren zur herstellung kautschukhaltiger thermoplastischer formmassen
CO5021156A1 (es) Proceso para preparar una composicion de asfalto
DE602005005637D1 (de) Verfahren zur herstellung eines poly(arylenethers)
DE602006006074D1 (de) Verfahren zur herstellung einer folie aus fasermaterial mit lokalisierten teilen aus fasermaterial
ATE476269T1 (de) Verfahren zur herstellung von rasierklingen
ATE448079T1 (de) Texturierte struktur und verfahren zur herstellung einer texturierten struktur
DE60113693D1 (de) Verfahren zur herstellung von produkten enthaltend mineralteilchen und asphaltenhaltiges bindemittel
ATE489430T1 (de) Verfahren zur herstellung von asphalt
ATE310488T1 (de) Gemisch zur herstellung von hochexpansionspressformen aus stein

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties