ATE424043T1 - PHOTOSENSOR AND PHOTOSENSOR SYSTEM - Google Patents

PHOTOSENSOR AND PHOTOSENSOR SYSTEM

Info

Publication number
ATE424043T1
ATE424043T1 AT00948313T AT00948313T ATE424043T1 AT E424043 T1 ATE424043 T1 AT E424043T1 AT 00948313 T AT00948313 T AT 00948313T AT 00948313 T AT00948313 T AT 00948313T AT E424043 T1 ATE424043 T1 AT E424043T1
Authority
AT
Austria
Prior art keywords
photosensor
carrier generating
incident
generating regions
equalize
Prior art date
Application number
AT00948313T
Other languages
German (de)
Inventor
Kazuhiro Sasaki
Makoto Sasaki
Yasuo Koshizuka
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000107468A external-priority patent/JP4154555B2/en
Priority claimed from JP2000122157A external-priority patent/JP3951088B2/en
Priority claimed from JP2000163303A external-priority patent/JP3674942B2/en
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Application granted granted Critical
Publication of ATE424043T1 publication Critical patent/ATE424043T1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/198—Contact-type image sensors [CIS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Air Bags (AREA)
  • Prostheses (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Burglar Alarm Systems (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

A photosensor array is provided with one or more semiconductor layers having carrier generating regions for generating carriers by incident exciting light, and the positions of the carrier generating regions are set arbitrarily so as to equalize the balance of incident light in the direction of two-dimensional travel, so that sensing with less distortion can be achieved.
AT00948313T 1999-08-02 2000-07-28 PHOTOSENSOR AND PHOTOSENSOR SYSTEM ATE424043T1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP21831699 1999-08-02
JP2000107468A JP4154555B2 (en) 2000-04-10 2000-04-10 Photosensor array and two-dimensional image reader
JP2000122157A JP3951088B2 (en) 2000-04-24 2000-04-24 Photosensor array and two-dimensional image reader
JP2000163303A JP3674942B2 (en) 1999-08-02 2000-05-31 Photoelectric conversion element, photosensor array, and two-dimensional image reading apparatus

Publications (1)

Publication Number Publication Date
ATE424043T1 true ATE424043T1 (en) 2009-03-15

Family

ID=27476860

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00948313T ATE424043T1 (en) 1999-08-02 2000-07-28 PHOTOSENSOR AND PHOTOSENSOR SYSTEM

Country Status (13)

Country Link
US (1) US6670595B1 (en)
EP (1) EP1118126B1 (en)
KR (1) KR20010075560A (en)
CN (1) CN1316636C (en)
AT (1) ATE424043T1 (en)
AU (1) AU756447B2 (en)
CA (1) CA2346032C (en)
DE (1) DE60041627D1 (en)
EA (1) EA003343B1 (en)
HK (1) HK1041366B (en)
NO (1) NO20011640L (en)
TW (1) TW465105B (en)
WO (1) WO2001009960A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382817B1 (en) * 1999-01-20 2003-05-09 엘지.필립스 엘시디 주식회사 A pattern for detecting the living things and thin film transistor optical sensor with the same
US6765187B2 (en) * 2001-06-27 2004-07-20 Canon Kabushiki Kaisha Imaging apparatus
JP4154874B2 (en) * 2001-07-30 2008-09-24 カシオ計算機株式会社 Fingerprint reader and fingerprint reading method
TWI243339B (en) * 2002-03-19 2005-11-11 Casio Computer Co Ltd Image reading apparatus and drive control method
JP5157161B2 (en) * 2006-12-27 2013-03-06 カシオ計算機株式会社 Photo sensor
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
AT505688A1 (en) * 2007-09-13 2009-03-15 Nanoident Technologies Ag SENSOR MATRIX FROM SEMICONDUCTOR COMPONENTS
TWI354823B (en) 2007-09-17 2011-12-21 Au Optronics Corp Display device, manufacturing method thereof, cont
JP2009164543A (en) * 2007-12-11 2009-07-23 Sony Corp Optical sensor and display device
KR101322137B1 (en) * 2008-06-24 2013-10-25 엘지디스플레이 주식회사 Liquid Crystal Display
KR102251817B1 (en) 2008-10-24 2021-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US20130214279A1 (en) * 2010-04-30 2013-08-22 Jun Nishimura Circuit board and display device
KR20120075971A (en) * 2010-12-29 2012-07-09 삼성모바일디스플레이주식회사 Multi layered photo diode and method for manufacturing the same
NZ720871A (en) * 2013-12-10 2020-03-27 Illumina Inc Biosensors for biological or chemical analysis and methods of manufacturing the same
CN111276546B (en) * 2020-02-20 2022-07-29 武汉华星光电技术有限公司 Display panel and method of making the same
CN113421942B (en) * 2021-05-13 2022-11-29 北京大学深圳研究生院 Photodetection transistor, method for manufacturing the same, and photodetection method using the same
WO2024198760A1 (en) * 2023-03-31 2024-10-03 京东方科技集团股份有限公司 Photoelectric sensor assembly and electronic device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU862753A1 (en) * 1980-04-03 1996-05-10 Запорожский индустриальный институт Phototransistor
US4744637A (en) * 1984-10-05 1988-05-17 Canon Kabushiki Kaisha Liquid crystal device with a protective layer of a particular coefficient of expansion
US5200634A (en) * 1988-09-30 1993-04-06 Hitachi, Ltd. Thin film phototransistor and photosensor array using the same
DE69117785T2 (en) * 1990-03-27 1997-02-06 Canon Kk Thin film semiconductor device
US5075237A (en) * 1990-07-26 1991-12-24 Industrial Technology Research Institute Process of making a high photosensitive depletion-gate thin film transistor
JPH04299578A (en) * 1991-03-27 1992-10-22 Canon Inc Photoelectric conversion elements and thin film semiconductor devices
RU2045110C1 (en) * 1992-03-27 1995-09-27 Валерий Александрович Болдырев Photodetector with cellular structure
US5461419A (en) * 1992-10-16 1995-10-24 Casio Computer Co., Ltd. Photoelectric conversion system
JP3019632B2 (en) * 1992-10-16 2000-03-13 カシオ計算機株式会社 Photo sensor system and driving method thereof
US5604360A (en) * 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
WO1994026061A1 (en) 1993-04-29 1994-11-10 Michael Friedland Hands free video camera system
JPH08102547A (en) * 1994-09-30 1996-04-16 Casio Comput Co Ltd Photoelectric conversion device and manufacturing method thereof
RU2114490C1 (en) * 1995-08-08 1998-06-27 Винницкий государственный технический университет Semiconductor optical detector
JPH0980470A (en) * 1995-09-14 1997-03-28 Hitachi Electron Eng Co Ltd Method for repairing wiring defect of TFT substrate
JP3704406B2 (en) * 1996-10-30 2005-10-12 株式会社東芝 Solid-state imaging device
US6310683B1 (en) * 1997-08-05 2001-10-30 Casio Computer Co., Ltd. Apparatus for reading fingerprint

Also Published As

Publication number Publication date
HK1041366A1 (en) 2002-07-05
EP1118126A1 (en) 2001-07-25
EA003343B1 (en) 2003-04-24
CA2346032A1 (en) 2001-02-08
AU756447B2 (en) 2003-01-16
KR20010075560A (en) 2001-08-09
CA2346032C (en) 2004-03-23
NO20011640L (en) 2001-06-01
CN1319257A (en) 2001-10-24
EA200100409A1 (en) 2001-10-22
US6670595B1 (en) 2003-12-30
EP1118126B1 (en) 2009-02-25
CN1316636C (en) 2007-05-16
WO2001009960A1 (en) 2001-02-08
NO20011640D0 (en) 2001-03-30
HK1041366B (en) 2009-06-19
AU6182800A (en) 2001-02-19
TW465105B (en) 2001-11-21
DE60041627D1 (en) 2009-04-09

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