ATE409355T1 - Ionenquelle mit im wesentlichen planarer ausgestaltung - Google Patents

Ionenquelle mit im wesentlichen planarer ausgestaltung

Info

Publication number
ATE409355T1
ATE409355T1 AT05818170T AT05818170T ATE409355T1 AT E409355 T1 ATE409355 T1 AT E409355T1 AT 05818170 T AT05818170 T AT 05818170T AT 05818170 T AT05818170 T AT 05818170T AT E409355 T1 ATE409355 T1 AT E409355T1
Authority
AT
Austria
Prior art keywords
ion source
anode
cathode
planar design
example embodiments
Prior art date
Application number
AT05818170T
Other languages
English (en)
Inventor
Henry Luten
Vijayen Veerasamy
Original Assignee
Guardian Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guardian Industries filed Critical Guardian Industries
Application granted granted Critical
Publication of ATE409355T1 publication Critical patent/ATE409355T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H01J27/143—Hall-effect ion sources with closed electron drift
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/04—Ion guns

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
AT05818170T 2004-11-12 2005-11-07 Ionenquelle mit im wesentlichen planarer ausgestaltung ATE409355T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/986,456 US7183559B2 (en) 2004-11-12 2004-11-12 Ion source with substantially planar design

Publications (1)

Publication Number Publication Date
ATE409355T1 true ATE409355T1 (de) 2008-10-15

Family

ID=36010910

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05818170T ATE409355T1 (de) 2004-11-12 2005-11-07 Ionenquelle mit im wesentlichen planarer ausgestaltung

Country Status (8)

Country Link
US (1) US7183559B2 (de)
EP (1) EP1825491B1 (de)
AT (1) ATE409355T1 (de)
CA (1) CA2585176C (de)
DE (1) DE602005009972D1 (de)
ES (1) ES2313443T3 (de)
PL (1) PL1825491T3 (de)
WO (1) WO2006055296A2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI259491B (en) * 2004-12-24 2006-08-01 Ind Tech Res Inst Improved anode layer particle beam device
US7405411B2 (en) * 2005-05-06 2008-07-29 Guardian Industries Corp. Ion source with multi-piece outer cathode
US7872422B2 (en) * 2006-07-18 2011-01-18 Guardian Industries Corp. Ion source with recess in electrode
US7550927B2 (en) * 2006-11-09 2009-06-23 Applied Materials, Inc. System and method for generating ions and radicals
US20120015195A1 (en) 2007-01-29 2012-01-19 Guardian Industries Corp. and C.R.V.C. Method of making heat treated and ion-beam etched/milled coated article using diamond-like carbon (dlc) coating and protective film
US20120015196A1 (en) 2007-01-29 2012-01-19 Guardian Industries Corp. Method of making heat treated coated article using diamond-like carbon (dlc) coating and protective film on acid-etched surface
US20120040160A1 (en) 2007-01-29 2012-02-16 Guardian Industries Corp. Method of making heat treated and ion-beam etched/milled coated article using diamond-like carbon (dlc) protective film
KR100838045B1 (ko) * 2007-11-28 2008-06-12 심문식 스퍼터링과 이온 빔 증착을 이용한 산화박막 증착장치
CN102308358B (zh) * 2008-12-08 2015-01-07 通用等离子公司 具有自清洁阳极的闭合漂移磁场离子源装置及基材改性修改方法
US10586689B2 (en) 2009-07-31 2020-03-10 Guardian Europe S.A.R.L. Sputtering apparatus including cathode with rotatable targets, and related methods
WO2011017314A2 (en) * 2009-08-03 2011-02-10 General Plasma, Inc. Closed drift ion source with symmetric magnetic field
US20110100446A1 (en) 2009-11-05 2011-05-05 Guardian Industries Corp. High haze transparent contact including ion-beam treated layer for solar cells, and/or method of making the same
US20110168252A1 (en) * 2009-11-05 2011-07-14 Guardian Industries Corp. Textured coating with etching-blocking layer for thin-film solar cells and/or methods of making the same
US20110186120A1 (en) * 2009-11-05 2011-08-04 Guardian Industries Corp. Textured coating with various feature sizes made by using multiple-agent etchant for thin-film solar cells and/or methods of making the same
US8502066B2 (en) 2009-11-05 2013-08-06 Guardian Industries Corp. High haze transparent contact including insertion layer for solar cells, and/or method of making the same
EP2431995A1 (de) * 2010-09-17 2012-03-21 Asociacion de la Industria Navarra (AIN) Ionisierungsvorrichtung
US8541792B2 (en) 2010-10-15 2013-09-24 Guardian Industries Corp. Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same
US20120167971A1 (en) 2010-12-30 2012-07-05 Alexey Krasnov Textured coating for thin-film solar cells and/or methods of making the same
US20150090898A1 (en) * 2011-08-03 2015-04-02 Richard John Futter Ion source
KR101480114B1 (ko) * 2013-06-13 2015-01-07 (주)화인솔루션 밀폐 고정 절연부를 갖는 이온 소스
WO2014175702A1 (ko) * 2013-04-26 2014-10-30 (주) 화인솔루션 이온빔 소스
WO2018226966A1 (en) * 2017-06-08 2018-12-13 Board Of Trustees Of Michigan State University Magnetic-field-assisted plasma coating system
CN108914091B (zh) * 2018-08-10 2020-09-01 成都极星等离子科技有限公司 一种改进型阳极层离子源
CN110846624B (zh) * 2019-11-07 2022-10-04 北京大学深圳研究生院 一种阳极层离子源
US12224165B2 (en) 2019-12-06 2025-02-11 Board Of Trustees Of Michigan State University Magnetic-field-assisted plasma coating system
CN119275077B (zh) * 2024-09-30 2025-09-23 西安工业大学 一种磁透镜约束聚焦反应离子束源

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US38358A (en) * 1863-04-28 Improvement in em b roidering-m ach ines
US5656819A (en) 1994-11-16 1997-08-12 Sandia Corporation Pulsed ion beam source
US6147354A (en) * 1998-07-02 2000-11-14 Maishev; Yuri Universal cold-cathode type ion source with closed-loop electron drifting and adjustable ionization gap
US6002208A (en) 1998-07-02 1999-12-14 Advanced Ion Technology, Inc. Universal cold-cathode type ion source with closed-loop electron drifting and adjustable ion-emitting slit
US6153067A (en) 1998-12-30 2000-11-28 Advanced Ion Technology, Inc. Method for combined treatment of an object with an ion beam and a magnetron plasma with a combined magnetron-plasma and ion-beam source
US6037717A (en) 1999-01-04 2000-03-14 Advanced Ion Technology, Inc. Cold-cathode ion source with a controlled position of ion beam
US6242749B1 (en) * 1999-01-30 2001-06-05 Yuri Maishev Ion-beam source with uniform distribution of ion-current density on the surface of an object being treated
US6246059B1 (en) * 1999-03-06 2001-06-12 Advanced Ion Technology, Inc. Ion-beam source with virtual anode
US6451389B1 (en) 1999-04-17 2002-09-17 Advanced Energy Industries, Inc. Method for deposition of diamond like carbon
US6740211B2 (en) 2001-12-18 2004-05-25 Guardian Industries Corp. Method of manufacturing windshield using ion beam milling of glass substrate(s)
US6368664B1 (en) 1999-05-03 2002-04-09 Guardian Industries Corp. Method of ion beam milling substrate prior to depositing diamond like carbon layer thereon
JP2003506826A (ja) * 1999-08-02 2003-02-18 アドバンスド エナジー インダストリーズ， インコーポレイテッド イオン源を用いる薄膜堆積システム用のエンハンスされた電子放出表面
US6359388B1 (en) 2000-08-28 2002-03-19 Guardian Industries Corp. Cold cathode ion beam deposition apparatus with segregated gas flow
US6919672B2 (en) * 2002-04-10 2005-07-19 Applied Process Technologies, Inc. Closed drift ion source
US6815690B2 (en) * 2002-07-23 2004-11-09 Guardian Industries Corp. Ion beam source with coated electrode(s)
US6988463B2 (en) * 2002-10-18 2006-01-24 Guardian Industries Corp. Ion beam source with gas introduced directly into deposition/vacuum chamber
US6812648B2 (en) * 2002-10-21 2004-11-02 Guardian Industries Corp. Method of cleaning ion source, and corresponding apparatus/system
US6806651B1 (en) * 2003-04-22 2004-10-19 Zond, Inc. High-density plasma source
US7718983B2 (en) * 2003-08-20 2010-05-18 Veeco Instruments, Inc. Sputtered contamination shielding for an ion source
US6987364B2 (en) * 2003-09-03 2006-01-17 Guardian Industries Corp. Floating mode ion source
US7030390B2 (en) * 2003-09-09 2006-04-18 Guardian Industries Corp. Ion source with electrode kept at potential(s) other than ground by zener diode(s), thyristor(s) and/or the like

Also Published As

Publication number Publication date
US7183559B2 (en) 2007-02-27
US20060103319A1 (en) 2006-05-18
EP1825491B1 (de) 2008-09-24
CA2585176C (en) 2010-08-10
EP1825491A2 (de) 2007-08-29
WO2006055296A3 (en) 2006-08-31
DE602005009972D1 (de) 2008-11-06
PL1825491T3 (pl) 2009-03-31
ES2313443T3 (es) 2009-03-01
WO2006055296A2 (en) 2006-05-26
CA2585176A1 (en) 2006-05-26

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Legal Events

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