ATE399146T1 - METHOD FOR GENERATING A PREFINED INTERNAL PRESSURE IN A CAVITY OF A SEMICONDUCTOR COMPONENT - Google Patents

METHOD FOR GENERATING A PREFINED INTERNAL PRESSURE IN A CAVITY OF A SEMICONDUCTOR COMPONENT

Info

Publication number
ATE399146T1
ATE399146T1 AT06700450T AT06700450T ATE399146T1 AT E399146 T1 ATE399146 T1 AT E399146T1 AT 06700450 T AT06700450 T AT 06700450T AT 06700450 T AT06700450 T AT 06700450T AT E399146 T1 ATE399146 T1 AT E399146T1
Authority
AT
Austria
Prior art keywords
semiconductor device
cavity
internal pressure
temperature
prefined
Prior art date
Application number
AT06700450T
Other languages
German (de)
Inventor
Hans Quenzer
Peter Merz
Martin Oldsen
Wolfgang Reinert
Original Assignee
Fraunhofer Ges Forschung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Ges Forschung filed Critical Fraunhofer Ges Forschung
Application granted granted Critical
Publication of ATE399146T1 publication Critical patent/ATE399146T1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0172—Seals
    • B81C2203/019—Seals characterised by the material or arrangement of seals between parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)

Abstract

A method of creating a predefined internal pressure within a cavity of a semiconductor device, the method including providing the semiconductor device, the semiconductor device including a semiconductor oxide area which is continuously arranged between the cavity of the semiconductor device and an external surface of the semiconductor device, exposing the semiconductor device to an ambient atmosphere with a noble gas at a first temperature for a predetermined time period, and setting a second temperature, which is different from the first, after the predetermined time period has expired, the semiconductor oxide area exhibiting a higher permeability for the noble gas at the first temperature than at the second temperature.
AT06700450T 2005-01-12 2006-01-04 METHOD FOR GENERATING A PREFINED INTERNAL PRESSURE IN A CAVITY OF A SEMICONDUCTOR COMPONENT ATE399146T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005001449A DE102005001449B3 (en) 2005-01-12 2005-01-12 A method for generating a predetermined internal pressure in a cavity of a semiconductor device

Publications (1)

Publication Number Publication Date
ATE399146T1 true ATE399146T1 (en) 2008-07-15

Family

ID=36001141

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06700450T ATE399146T1 (en) 2005-01-12 2006-01-04 METHOD FOR GENERATING A PREFINED INTERNAL PRESSURE IN A CAVITY OF A SEMICONDUCTOR COMPONENT

Country Status (6)

Country Link
US (1) US7410828B2 (en)
EP (1) EP1836123B1 (en)
JP (1) JP4809848B2 (en)
AT (1) ATE399146T1 (en)
DE (2) DE102005001449B3 (en)
WO (1) WO2006074871A1 (en)

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EP2126155B1 (en) * 2006-12-15 2019-03-13 BAE Systems PLC Improvements relating to thin film getter devices
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US7557417B2 (en) 2007-02-21 2009-07-07 Infineon Technologies Ag Module comprising a semiconductor chip comprising a movable element
JP5096761B2 (en) * 2007-02-23 2012-12-12 パナソニック株式会社 Manufacturing method of vacuum sealing device
JP4370339B2 (en) * 2007-03-23 2009-11-25 Ｏｋｉセミコンダクタ株式会社 Manufacturing method of MEMS vibrator and MEMS vibrator
DE102008042347B4 (en) * 2008-09-25 2016-11-10 Robert Bosch Gmbh Micromechanical sensor and method for its production
US9870968B2 (en) 2011-10-27 2018-01-16 Global Circuit Innovations Incorporated Repackaged integrated circuit and assembly method
US10147660B2 (en) 2011-10-27 2018-12-04 Global Circuits Innovations, Inc. Remapped packaged extracted die with 3D printed bond connections
US9935028B2 (en) 2013-03-05 2018-04-03 Global Circuit Innovations Incorporated Method and apparatus for printing integrated circuit bond connections
US9966319B1 (en) 2011-10-27 2018-05-08 Global Circuit Innovations Incorporated Environmental hardening integrated circuit method and apparatus
US10128161B2 (en) 2011-10-27 2018-11-13 Global Circuit Innovations, Inc. 3D printed hermetic package assembly and method
US10109606B2 (en) 2011-10-27 2018-10-23 Global Circuit Innovations, Inc. Remapped packaged extracted die
US10002846B2 (en) 2011-10-27 2018-06-19 Global Circuit Innovations Incorporated Method for remapping a packaged extracted die with 3D printed bond connections
US10177054B2 (en) 2011-10-27 2019-01-08 Global Circuit Innovations, Inc. Method for remapping a packaged extracted die
FR2994332B1 (en) 2012-07-31 2015-05-15 Commissariat Energie Atomique METHOD FOR ENCAPSULATING A MICROELECTRONIC DEVICE
EP2883242A1 (en) 2012-08-10 2015-06-17 Gottfried Wilhelm Leibniz Universität Hannover Method for producing a hermetically sealed housing
US8748205B1 (en) * 2012-11-30 2014-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS structure with adaptable inter-substrate bond
FR3005648B1 (en) * 2013-05-15 2016-02-12 Commissariat Energie Atomique METHOD FOR ENCAPSULATING A MICROELECTRONIC DEVICE COMPRISING A NOVEL GAS INJECTION THROUGH A MATERIAL PERMEABLE TO THIS NOBLE GAS
EP2871152B1 (en) * 2013-11-06 2017-05-24 Sensirion AG Sensor device
FR3028508B1 (en) 2014-11-13 2016-12-30 Commissariat Energie Atomique ENCAPSULATION STRUCTURE COMPRISING A CAVITY COUPLED WITH A GAS INJECTION CHANNEL FORMED BY A PERMEABLE MATERIAL
FR3047842B1 (en) * 2016-02-12 2018-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives ELECTRONIC COMPONENT WITH METALLIC RESISTANCE SUSPENDED IN A CLOSED CAVITY
US10115645B1 (en) 2018-01-09 2018-10-30 Global Circuit Innovations, Inc. Repackaged reconditioned die method and assembly
DE102018221108A1 (en) 2018-12-06 2020-06-10 Robert Bosch Gmbh Method for setting a pressure in a cavern formed with the aid of a substrate and a substrate cap, semiconductor system, in particular wafer system
DE102020104613A1 (en) 2020-02-21 2021-08-26 Schott Ag Hermetically sealed glass casing
US11508680B2 (en) 2020-11-13 2022-11-22 Global Circuit Innovations Inc. Solder ball application for singular die

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Also Published As

Publication number Publication date
US20070259470A1 (en) 2007-11-08
EP1836123B1 (en) 2008-06-25
EP1836123A1 (en) 2007-09-26
JP2008527730A (en) 2008-07-24
DE102005001449B3 (en) 2006-07-20
JP4809848B2 (en) 2011-11-09
US7410828B2 (en) 2008-08-12
WO2006074871A1 (en) 2006-07-20
DE502006000989D1 (en) 2008-08-07

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