ATE389042T1 - PRODUCTION PROCESS FOR REACTOR FOR DECOMPOSING GASES - Google Patents

PRODUCTION PROCESS FOR REACTOR FOR DECOMPOSING GASES

Info

Publication number
ATE389042T1
ATE389042T1 AT05774994T AT05774994T ATE389042T1 AT E389042 T1 ATE389042 T1 AT E389042T1 AT 05774994 T AT05774994 T AT 05774994T AT 05774994 T AT05774994 T AT 05774994T AT E389042 T1 ATE389042 T1 AT E389042T1
Authority
AT
Austria
Prior art keywords
reactor
wall
separating
production process
separating layer
Prior art date
Application number
AT05774994T
Other languages
German (de)
Inventor
Armin Mueller
Torsten Sill
Original Assignee
Joint Solar Silicon Gmbh & Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Joint Solar Silicon Gmbh & Co filed Critical Joint Solar Silicon Gmbh & Co
Application granted granted Critical
Publication of ATE389042T1 publication Critical patent/ATE389042T1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Treating Waste Gases (AREA)

Abstract

Method for manufacturing a reactor for separating a gas containing silicon, comprising the following stages: preparation of a substantially tubular reactor blank with an inner wall and an outer wall, and application of a separating layer containing a powdery separating medium, at least onto the inner wall of the reactor blank. The reactor with the separating layer applied thereon offers simple and effective protection of the inner wall from deposited silicon powder. The separating layer and the silicon powder deposited thereon can easily be removed mechanically, without the inner wall being damaged.
AT05774994T 2004-08-10 2005-07-26 PRODUCTION PROCESS FOR REACTOR FOR DECOMPOSING GASES ATE389042T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004038717A DE102004038717A1 (en) 2004-08-10 2004-08-10 Production process for reactor for the decomposition of gases

Publications (1)

Publication Number Publication Date
ATE389042T1 true ATE389042T1 (en) 2008-03-15

Family

ID=35311715

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05774994T ATE389042T1 (en) 2004-08-10 2005-07-26 PRODUCTION PROCESS FOR REACTOR FOR DECOMPOSING GASES

Country Status (8)

Country Link
US (1) US20080213156A1 (en)
EP (1) EP1778890B1 (en)
JP (1) JP2008509071A (en)
CN (1) CN1993494A (en)
AT (1) ATE389042T1 (en)
DE (2) DE102004038717A1 (en)
ES (1) ES2302223T3 (en)
WO (1) WO2006018101A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100112590A1 (en) 2007-07-23 2010-05-06 The Chinese University Of Hong Kong Diagnosing Fetal Chromosomal Aneuploidy Using Genomic Sequencing With Enrichment
JP5749730B2 (en) * 2009-11-25 2015-07-15 ダイナテック エンジニアリング エーエス Reactor and method for the production of silicon
NO334776B1 (en) 2011-09-26 2014-05-26 Dynatec Engineering As Reactor and process for producing silicon by chemical vapor deposition
US9641163B2 (en) * 2014-05-28 2017-05-02 Cree, Inc. Bandwidth limiting methods for GaN power transistors
KR101739206B1 (en) * 2015-12-09 2017-05-23 오씨아이 주식회사 Apparatus for manufacturing polysilicon with excellent ground fault current prevention and silicon dust removal effects
JP2020007196A (en) * 2018-07-11 2020-01-16 株式会社トクヤマ Manufacturing apparatus of silicon fine particle

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH346532A (en) * 1956-01-19 1960-05-31 Lonza Ag Process for the production of pure silicon metal
DE2334476A1 (en) * 1973-07-06 1975-01-23 Siemens Ag Thick wall silicon tubes - made by vapour deposition on doped direct resistance heated silicon bars
JPS5144913B2 (en) * 1974-10-03 1976-12-01
ZA764930B (en) * 1975-09-15 1977-07-27 Rexnord Inc Wear resistant coated pipe and method of making it
US4444812A (en) * 1980-07-28 1984-04-24 Monsanto Company Combination gas curtains for continuous chemical vapor deposition production of silicon bodies
DE3034957C2 (en) * 1980-09-17 1983-01-13 Degussa Ag, 6000 Frankfurt Method and device for the internal coating of contact tubes
JPS5767019A (en) * 1980-10-13 1982-04-23 Shin Etsu Handotai Co Ltd Manufacture of pure silicon granule for manufacturing polycrystalline silicon by fluidized bed method
US4354987A (en) * 1981-03-31 1982-10-19 Union Carbide Corporation Consolidation of high purity silicon powder
JPS58145611A (en) * 1982-02-23 1983-08-30 Shin Etsu Chem Co Ltd Crushing and sieving of silicon particle
US4642227A (en) * 1982-08-20 1987-02-10 California Institute Of Technology Reactor for producing large particles of materials from gases
JPS6042823A (en) * 1983-08-19 1985-03-07 Toshiba Corp Method for forming thin film
US4968380A (en) * 1989-05-24 1990-11-06 Mobil Solar Energy Corporation System for continuously replenishing melt
DE4209384C1 (en) * 1992-03-23 1993-04-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
US5260538A (en) * 1992-04-09 1993-11-09 Ethyl Corporation Device for the magnetic inductive heating of vessels
DE4230934A1 (en) * 1992-09-16 1994-03-17 Robert Wilhelm Heiliger Process for coating a cut pipe on the inside and outside
JPH06127922A (en) * 1992-10-16 1994-05-10 Tonen Chem Corp Fluidized bed reactor for producing polycrystalline silicon
DE19502865A1 (en) * 1994-01-31 1995-08-03 Hemlock Semiconductor Corp Sealed reactor used to produce silicon@ of semiconductor quality
JPH08310808A (en) * 1995-05-16 1996-11-26 Tokuyama Corp Production of granular polysilicon
JPH1050635A (en) * 1996-07-29 1998-02-20 Kokusai Electric Co Ltd Generation of metal thin film and cvd device
US5800611A (en) * 1997-09-08 1998-09-01 Christensen; Howard Method for making large area single crystal silicon sheets
US6365225B1 (en) * 1999-02-19 2002-04-02 G.T. Equipment Technologies, Inc. Cold wall reactor and method for chemical vapor deposition of bulk polysilicon
CZ20021297A3 (en) * 2000-02-18 2002-11-13 G. T. Equipment Technologies Inc. Method for chemical deposition of polysilicon vapors and apparatus for making the same
JP2001278612A (en) * 2000-03-31 2001-10-10 Nippei Toyama Corp Method of recovering silicon
JP4157281B2 (en) * 2000-05-11 2008-10-01 株式会社トクヤマ Reactor for silicon production
DE10124848A1 (en) * 2001-05-22 2002-11-28 Solarworld Ag Production of high-purity granular silicon by thermal decomposition of silanes or halosilanes in a fluidized-bed reactor comprises separating particles of the desired size in an external classifier
JP2003020216A (en) * 2001-07-03 2003-01-24 Tokuyama Corp Method for manufacturing silicon
JP3749464B2 (en) * 2001-09-27 2006-03-01 住友チタニウム株式会社 Polycrystalline silicon production equipment
JP2004018369A (en) * 2002-06-19 2004-01-22 Yutaka Kamaike Apparatus and method of manufacturing silicon
DE10357091A1 (en) * 2003-12-06 2005-07-07 Degussa Ag Device and method for the separation of very fine particles from the gas phase
DE102004027563A1 (en) * 2004-06-04 2005-12-22 Joint Solar Silicon Gmbh & Co. Kg Silicon and process for its production

Also Published As

Publication number Publication date
EP1778890A1 (en) 2007-05-02
ES2302223T3 (en) 2008-07-01
CN1993494A (en) 2007-07-04
EP1778890B1 (en) 2008-03-12
WO2006018101A1 (en) 2006-02-23
DE502005003229D1 (en) 2008-04-24
JP2008509071A (en) 2008-03-27
DE102004038717A1 (en) 2006-02-23
US20080213156A1 (en) 2008-09-04

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