US7554842B2
(en)
*
|
2001-09-17 |
2009-06-30 |
Sandisk Corporation |
Multi-purpose non-volatile memory card
|
US7178004B2
(en)
*
|
2003-01-31 |
2007-02-13 |
Yan Polansky |
Memory array programming circuit and a method for using the circuit
|
US7117326B2
(en)
*
|
2003-06-26 |
2006-10-03 |
Intel Corporation |
Tracking modifications to a memory
|
US7356755B2
(en)
*
|
2003-10-16 |
2008-04-08 |
Intel Corporation |
Error correction for multi-level cell memory with overwrite capability
|
US7257033B2
(en)
|
2005-03-17 |
2007-08-14 |
Impinj, Inc. |
Inverter non-volatile memory cell and array system
|
US7715236B2
(en)
*
|
2005-03-30 |
2010-05-11 |
Virage Logic Corporation |
Fault tolerant non volatile memories and methods
|
US7679957B2
(en)
|
2005-03-31 |
2010-03-16 |
Virage Logic Corporation |
Redundant non-volatile memory cell
|
US7272041B2
(en)
*
|
2005-06-30 |
2007-09-18 |
Intel Corporation |
Memory array with pseudo single bit memory cell and method
|
US8239735B2
(en)
|
2006-05-12 |
2012-08-07 |
Apple Inc. |
Memory Device with adaptive capacity
|
WO2007132452A2
(en)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies |
Reducing programming error in memory devices
|
CN103280239B
(zh)
|
2006-05-12 |
2016-04-06 |
苹果公司 |
存储设备中的失真估计和消除
|
WO2007132457A2
(en)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies Ltd. |
Combined distortion estimation and error correction coding for memory devices
|
US8000134B2
(en)
|
2006-05-15 |
2011-08-16 |
Apple Inc. |
Off-die charge pump that supplies multiple flash devices
|
US7613043B2
(en)
|
2006-05-15 |
2009-11-03 |
Apple Inc. |
Shifting reference values to account for voltage sag
|
US7639542B2
(en)
*
|
2006-05-15 |
2009-12-29 |
Apple Inc. |
Maintenance operations for multi-level data storage cells
|
US7568135B2
(en)
|
2006-05-15 |
2009-07-28 |
Apple Inc. |
Use of alternative value in cell detection
|
WO2008026203A2
(en)
*
|
2006-08-27 |
2008-03-06 |
Anobit Technologies |
Estimation of non-linear distortion in memory devices
|
US7821826B2
(en)
|
2006-10-30 |
2010-10-26 |
Anobit Technologies, Ltd. |
Memory cell readout using successive approximation
|
US7975192B2
(en)
*
|
2006-10-30 |
2011-07-05 |
Anobit Technologies Ltd. |
Reading memory cells using multiple thresholds
|
US7924648B2
(en)
|
2006-11-28 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory power and performance management
|
US8151163B2
(en)
|
2006-12-03 |
2012-04-03 |
Anobit Technologies Ltd. |
Automatic defect management in memory devices
|
US7593263B2
(en)
|
2006-12-17 |
2009-09-22 |
Anobit Technologies Ltd. |
Memory device with reduced reading latency
|
US7900102B2
(en)
|
2006-12-17 |
2011-03-01 |
Anobit Technologies Ltd. |
High-speed programming of memory devices
|
US8151166B2
(en)
|
2007-01-24 |
2012-04-03 |
Anobit Technologies Ltd. |
Reduction of back pattern dependency effects in memory devices
|
US7751240B2
(en)
|
2007-01-24 |
2010-07-06 |
Anobit Technologies Ltd. |
Memory device with negative thresholds
|
US7646636B2
(en)
|
2007-02-16 |
2010-01-12 |
Mosaid Technologies Incorporated |
Non-volatile memory with dynamic multi-mode operation
|
WO2008111058A2
(en)
|
2007-03-12 |
2008-09-18 |
Anobit Technologies Ltd. |
Adaptive estimation of memory cell read thresholds
|
US7958301B2
(en)
*
|
2007-04-10 |
2011-06-07 |
Marvell World Trade Ltd. |
Memory controller and method for memory pages with dynamically configurable bits per cell
|
US8001320B2
(en)
|
2007-04-22 |
2011-08-16 |
Anobit Technologies Ltd. |
Command interface for memory devices
|
US7719896B1
(en)
|
2007-04-24 |
2010-05-18 |
Virage Logic Corporation |
Configurable single bit/dual bits memory
|
US8234545B2
(en)
|
2007-05-12 |
2012-07-31 |
Apple Inc. |
Data storage with incremental redundancy
|
WO2008139441A2
(en)
|
2007-05-12 |
2008-11-20 |
Anobit Technologies Ltd. |
Memory device with internal signal processing unit
|
US7925936B1
(en)
|
2007-07-13 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory device with non-uniform programming levels
|
US7920423B1
(en)
|
2007-07-31 |
2011-04-05 |
Synopsys, Inc. |
Non volatile memory circuit with tailored reliability
|
US8259497B2
(en)
|
2007-08-06 |
2012-09-04 |
Apple Inc. |
Programming schemes for multi-level analog memory cells
|
US7802132B2
(en)
*
|
2007-08-17 |
2010-09-21 |
Intel Corporation |
Technique to improve and extend endurance and reliability of multi-level memory cells in a memory device
|
US8583857B2
(en)
*
|
2007-08-20 |
2013-11-12 |
Marvell World Trade Ltd. |
Method and system for object-oriented data storage
|
US20090055605A1
(en)
|
2007-08-20 |
2009-02-26 |
Zining Wu |
Method and system for object-oriented data storage
|
US8174905B2
(en)
|
2007-09-19 |
2012-05-08 |
Anobit Technologies Ltd. |
Programming orders for reducing distortion in arrays of multi-level analog memory cells
|
US7773413B2
(en)
|
2007-10-08 |
2010-08-10 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells in the presence of temperature variations
|
US8000141B1
(en)
|
2007-10-19 |
2011-08-16 |
Anobit Technologies Ltd. |
Compensation for voltage drifts in analog memory cells
|
US8527819B2
(en)
|
2007-10-19 |
2013-09-03 |
Apple Inc. |
Data storage in analog memory cell arrays having erase failures
|
US8068360B2
(en)
|
2007-10-19 |
2011-11-29 |
Anobit Technologies Ltd. |
Reading analog memory cells using built-in multi-threshold commands
|
US8270246B2
(en)
|
2007-11-13 |
2012-09-18 |
Apple Inc. |
Optimized selection of memory chips in multi-chips memory devices
|
US8225181B2
(en)
|
2007-11-30 |
2012-07-17 |
Apple Inc. |
Efficient re-read operations from memory devices
|
US8209588B2
(en)
|
2007-12-12 |
2012-06-26 |
Anobit Technologies Ltd. |
Efficient interference cancellation in analog memory cell arrays
|
US8456905B2
(en)
|
2007-12-16 |
2013-06-04 |
Apple Inc. |
Efficient data storage in multi-plane memory devices
|
US8085586B2
(en)
|
2007-12-27 |
2011-12-27 |
Anobit Technologies Ltd. |
Wear level estimation in analog memory cells
|
US8156398B2
(en)
|
2008-02-05 |
2012-04-10 |
Anobit Technologies Ltd. |
Parameter estimation based on error correction code parity check equations
|
US7924587B2
(en)
|
2008-02-21 |
2011-04-12 |
Anobit Technologies Ltd. |
Programming of analog memory cells using a single programming pulse per state transition
|
US7864573B2
(en)
|
2008-02-24 |
2011-01-04 |
Anobit Technologies Ltd. |
Programming analog memory cells for reduced variance after retention
|
US8230300B2
(en)
|
2008-03-07 |
2012-07-24 |
Apple Inc. |
Efficient readout from analog memory cells using data compression
|
US8059457B2
(en)
|
2008-03-18 |
2011-11-15 |
Anobit Technologies Ltd. |
Memory device with multiple-accuracy read commands
|
US8400858B2
(en)
|
2008-03-18 |
2013-03-19 |
Apple Inc. |
Memory device with reduced sense time readout
|
KR20100010355A
(ko)
|
2008-07-22 |
2010-02-01 |
삼성전자주식회사 |
플래시 메모리 장치 및 그것의 프로그램 및 소거 방법
|
US7924613B1
(en)
|
2008-08-05 |
2011-04-12 |
Anobit Technologies Ltd. |
Data storage in analog memory cells with protection against programming interruption
|
US7995388B1
(en)
|
2008-08-05 |
2011-08-09 |
Anobit Technologies Ltd. |
Data storage using modified voltages
|
US8949684B1
(en)
|
2008-09-02 |
2015-02-03 |
Apple Inc. |
Segmented data storage
|
US8169825B1
(en)
|
2008-09-02 |
2012-05-01 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells subjected to long retention periods
|
US8482978B1
(en)
|
2008-09-14 |
2013-07-09 |
Apple Inc. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8000135B1
(en)
|
2008-09-14 |
2011-08-16 |
Anobit Technologies Ltd. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8239734B1
(en)
|
2008-10-15 |
2012-08-07 |
Apple Inc. |
Efficient data storage in storage device arrays
|
US8261159B1
(en)
|
2008-10-30 |
2012-09-04 |
Apple, Inc. |
Data scrambling schemes for memory devices
|
US8208304B2
(en)
|
2008-11-16 |
2012-06-26 |
Anobit Technologies Ltd. |
Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
|
US8397131B1
(en)
|
2008-12-31 |
2013-03-12 |
Apple Inc. |
Efficient readout schemes for analog memory cell devices
|
US8248831B2
(en)
|
2008-12-31 |
2012-08-21 |
Apple Inc. |
Rejuvenation of analog memory cells
|
US8924661B1
(en)
|
2009-01-18 |
2014-12-30 |
Apple Inc. |
Memory system including a controller and processors associated with memory devices
|
US8228701B2
(en)
|
2009-03-01 |
2012-07-24 |
Apple Inc. |
Selective activation of programming schemes in analog memory cell arrays
|
US8259506B1
(en)
|
2009-03-25 |
2012-09-04 |
Apple Inc. |
Database of memory read thresholds
|
US8832354B2
(en)
|
2009-03-25 |
2014-09-09 |
Apple Inc. |
Use of host system resources by memory controller
|
US8238157B1
(en)
|
2009-04-12 |
2012-08-07 |
Apple Inc. |
Selective re-programming of analog memory cells
|
US8479080B1
(en)
|
2009-07-12 |
2013-07-02 |
Apple Inc. |
Adaptive over-provisioning in memory systems
|
US8495465B1
(en)
|
2009-10-15 |
2013-07-23 |
Apple Inc. |
Error correction coding over multiple memory pages
|
US8677054B1
(en)
|
2009-12-16 |
2014-03-18 |
Apple Inc. |
Memory management schemes for non-volatile memory devices
|
US8694814B1
(en)
|
2010-01-10 |
2014-04-08 |
Apple Inc. |
Reuse of host hibernation storage space by memory controller
|
US20110173462A1
(en)
*
|
2010-01-11 |
2011-07-14 |
Apple Inc. |
Controlling and staggering operations to limit current spikes
|
US8572311B1
(en)
|
2010-01-11 |
2013-10-29 |
Apple Inc. |
Redundant data storage in multi-die memory systems
|
WO2011106054A1
(en)
|
2010-02-23 |
2011-09-01 |
Rambus Inc. |
Multilevel dram
|
US8402243B2
(en)
|
2010-02-25 |
2013-03-19 |
Apple Inc. |
Dynamically allocating number of bits per cell for memory locations of a non-volatile memory
|
US8694853B1
(en)
|
2010-05-04 |
2014-04-08 |
Apple Inc. |
Read commands for reading interfering memory cells
|
US8572423B1
(en)
|
2010-06-22 |
2013-10-29 |
Apple Inc. |
Reducing peak current in memory systems
|
US8595591B1
(en)
|
2010-07-11 |
2013-11-26 |
Apple Inc. |
Interference-aware assignment of programming levels in analog memory cells
|
US9104580B1
(en)
|
2010-07-27 |
2015-08-11 |
Apple Inc. |
Cache memory for hybrid disk drives
|
US8767459B1
(en)
|
2010-07-31 |
2014-07-01 |
Apple Inc. |
Data storage in analog memory cells across word lines using a non-integer number of bits per cell
|
US8856475B1
(en)
|
2010-08-01 |
2014-10-07 |
Apple Inc. |
Efficient selection of memory blocks for compaction
|
US8694854B1
(en)
|
2010-08-17 |
2014-04-08 |
Apple Inc. |
Read threshold setting based on soft readout statistics
|
US9021181B1
(en)
|
2010-09-27 |
2015-04-28 |
Apple Inc. |
Memory management for unifying memory cell conditions by using maximum time intervals
|
US8089807B1
(en)
*
|
2010-11-22 |
2012-01-03 |
Ge Aviation Systems, Llc |
Method and system for data storage
|
US20120140556A1
(en)
*
|
2010-12-07 |
2012-06-07 |
Macronix International Co., Ltd. |
Method of operating flash memory
|
KR20130060791A
(ko)
*
|
2011-11-30 |
2013-06-10 |
삼성전자주식회사 |
마모도 제어 로직을 포함하는 메모리 시스템, 데이터 저장 장치, 메모리 카드, 그리고 솔리드 스테이트 드라이브
|
KR101949987B1
(ko)
*
|
2012-12-18 |
2019-02-20 |
에스케이하이닉스 주식회사 |
데이터 저장 장치 및 그것의 동작 방법
|
CN104956313B
(zh)
|
2013-01-29 |
2018-02-09 |
马维尔国际贸易有限公司 |
用于基于数据分类将数据存储至固态存储设备的方法和装置
|
US9047211B2
(en)
|
2013-03-15 |
2015-06-02 |
SanDisk Technologies, Inc. |
Managing data reliability
|
US9786386B2
(en)
|
2015-02-27 |
2017-10-10 |
Microsoft Technology Licensing, Llc |
Dynamic approximate storage for custom applications
|
US9690656B2
(en)
*
|
2015-02-27 |
2017-06-27 |
Microsoft Technology Licensing, Llc |
Data encoding on single-level and variable multi-level cell storage
|
US11081168B2
(en)
*
|
2019-05-23 |
2021-08-03 |
Hefei Reliance Memory Limited |
Mixed digital-analog memory devices and circuits for secure storage and computing
|
US11556416B2
(en)
|
2021-05-05 |
2023-01-17 |
Apple Inc. |
Controlling memory readout reliability and throughput by adjusting distance between read thresholds
|
US11847342B2
(en)
|
2021-07-28 |
2023-12-19 |
Apple Inc. |
Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
|