ATE339012T1 - Schützende metallschicht für struktur auf halbleitersubstrat bei ätzen mit koh - Google Patents

Schützende metallschicht für struktur auf halbleitersubstrat bei ätzen mit koh

Info

Publication number
ATE339012T1
ATE339012T1 AT99122432T AT99122432T ATE339012T1 AT E339012 T1 ATE339012 T1 AT E339012T1 AT 99122432 T AT99122432 T AT 99122432T AT 99122432 T AT99122432 T AT 99122432T AT E339012 T1 ATE339012 T1 AT E339012T1
Authority
AT
Austria
Prior art keywords
face
koh
etching
semiconductor substrate
metal layer
Prior art date
Application number
AT99122432T
Other languages
English (en)
Inventor
Ulrich Muench
Original Assignee
Em Microelectronic Marin Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Em Microelectronic Marin Sa filed Critical Em Microelectronic Marin Sa
Application granted granted Critical
Publication of ATE339012T1 publication Critical patent/ATE339012T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding

Landscapes

  • Pressure Sensors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Weting (AREA)
AT99122432T 1999-11-10 1999-11-10 Schützende metallschicht für struktur auf halbleitersubstrat bei ätzen mit koh ATE339012T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99122432A EP1100118B1 (de) 1999-11-10 1999-11-10 Schützende Metallschicht für Struktur auf Halbleitersubstrat bei Ätzen mit KOH

Publications (1)

Publication Number Publication Date
ATE339012T1 true ATE339012T1 (de) 2006-09-15

Family

ID=8239368

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99122432T ATE339012T1 (de) 1999-11-10 1999-11-10 Schützende metallschicht für struktur auf halbleitersubstrat bei ätzen mit koh

Country Status (3)

Country Link
EP (1) EP1100118B1 (de)
AT (1) ATE339012T1 (de)
DE (1) DE69933124T2 (de)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130275A (en) * 1990-07-02 1992-07-14 Digital Equipment Corp. Post fabrication processing of semiconductor chips
US5231877A (en) * 1990-12-12 1993-08-03 University Of Cincinnati Solid state microanemometer
US5596222A (en) * 1994-08-12 1997-01-21 The Charles Stark Draper Laboratory, Inc. Wafer of transducer chips
EP0905495A1 (de) * 1997-09-29 1999-03-31 EM Microelectronic-Marin SA Schutzschicht für integrierte Schaltungsanordnungen und Verfahren zu deren Herstellung

Also Published As

Publication number Publication date
EP1100118B1 (de) 2006-09-06
DE69933124D1 (de) 2006-10-19
DE69933124T2 (de) 2007-08-02
EP1100118A1 (de) 2001-05-16

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Legal Events

Date Code Title Description
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