ATE310715T1 - Substrat aus spinel für das heteroepitaktische wachstum von iii-v materialen - Google Patents
Substrat aus spinel für das heteroepitaktische wachstum von iii-v materialenInfo
- Publication number
- ATE310715T1 ATE310715T1 AT03728328T AT03728328T ATE310715T1 AT E310715 T1 ATE310715 T1 AT E310715T1 AT 03728328 T AT03728328 T AT 03728328T AT 03728328 T AT03728328 T AT 03728328T AT E310715 T1 ATE310715 T1 AT E310715T1
- Authority
- AT
- Austria
- Prior art keywords
- iii
- spinel
- less
- layer
- alpha
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12063—Nonparticulate metal component
- Y10T428/12069—Plural nonparticulate metal components
- Y10T428/12076—Next to each other
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/1266—O, S, or organic compound in metal component
- Y10T428/12667—Oxide of transition metal or Al
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/115,719 US6844084B2 (en) | 2002-04-03 | 2002-04-03 | Spinel substrate and heteroepitaxial growth of III-V materials thereon |
PCT/US2003/010147 WO2003084886A1 (en) | 2002-04-03 | 2003-03-31 | Spinel substrate and heteroepitaxial growth of iii-v materials thereon |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE310715T1 true ATE310715T1 (de) | 2005-12-15 |
Family
ID=28673823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03728328T ATE310715T1 (de) | 2002-04-03 | 2003-03-31 | Substrat aus spinel für das heteroepitaktische wachstum von iii-v materialen |
Country Status (11)
Country | Link |
---|---|
US (1) | US6844084B2 (de) |
EP (1) | EP1490307B1 (de) |
JP (1) | JP4629341B2 (de) |
KR (1) | KR100655106B1 (de) |
CN (1) | CN1323963C (de) |
AT (1) | ATE310715T1 (de) |
AU (1) | AU2003233477A1 (de) |
CA (1) | CA2480117C (de) |
DE (1) | DE60302446T2 (de) |
TW (1) | TWI303675B (de) |
WO (1) | WO2003084886A1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6839362B2 (en) * | 2001-05-22 | 2005-01-04 | Saint-Gobain Ceramics & Plastics, Inc. | Cobalt-doped saturable absorber Q-switches and laser systems |
US7326477B2 (en) * | 2003-09-23 | 2008-02-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel boules, wafers, and methods for fabricating same |
WO2005031047A1 (en) * | 2003-09-23 | 2005-04-07 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
US7045223B2 (en) * | 2003-09-23 | 2006-05-16 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
US20050061230A1 (en) * | 2003-09-23 | 2005-03-24 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
US7919815B1 (en) * | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
US7956356B2 (en) * | 2006-12-28 | 2011-06-07 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
JP5346189B2 (ja) * | 2007-08-27 | 2013-11-20 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 多結晶性モノリシックアルミン酸マグネシウムスピネル |
US8143582B2 (en) * | 2008-05-15 | 2012-03-27 | Saint-Gobain Ceramics & Plastics, Inc. | Scintillator device |
US8217356B2 (en) * | 2008-08-11 | 2012-07-10 | Saint-Gobain Ceramics & Plastics, Inc. | Radiation detector including elongated elements |
CN101710182A (zh) * | 2008-09-19 | 2010-05-19 | 圣戈本陶瓷及塑料股份有限公司 | 形成闪烁设备的方法 |
US8961687B2 (en) * | 2009-08-31 | 2015-02-24 | Alliance For Sustainable Energy, Llc | Lattice matched crystalline substrates for cubic nitride semiconductor growth |
US8575471B2 (en) * | 2009-08-31 | 2013-11-05 | Alliance For Sustainable Energy, Llc | Lattice matched semiconductor growth on crystalline metallic substrates |
US10115859B2 (en) * | 2009-12-15 | 2018-10-30 | Lehigh University | Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer |
US8507365B2 (en) * | 2009-12-21 | 2013-08-13 | Alliance For Sustainable Energy, Llc | Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates |
US9425249B2 (en) | 2010-12-01 | 2016-08-23 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
US9041027B2 (en) | 2010-12-01 | 2015-05-26 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
EP2825159B1 (de) | 2012-03-15 | 2022-06-22 | Boehringer Ingelheim Vetmedica GmbH | Pharmazeutische tablettenformulierung für die veterinärmedizinische branche, herstellungsverfahren und verwendung dafür |
CN104005088B (zh) * | 2014-06-13 | 2017-06-13 | 中国科学院合肥物质科学研究院 | 过渡族金属离子掺杂的镁铝尖晶石晶体的提拉法生长方法 |
CN112876042B (zh) * | 2021-02-24 | 2022-08-30 | 彩虹(合肥)液晶玻璃有限公司 | 一种在线监测成型牵引辊浮动的装置及监测方法 |
CN115504513B (zh) * | 2022-10-20 | 2023-08-15 | 北京化工大学 | 一种异质结结构的多孔钙铁@镁铁复合尖晶石的制备方法及应用 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7520A (en) * | 1850-07-22 | Improvement in machines for raking-and binding grain | ||
US3885978A (en) | 1968-05-31 | 1975-05-27 | Matsushita Electric Works Ltd | Inorganic coating composition |
FR1597033A (de) | 1968-06-19 | 1970-06-22 | ||
DE1769635A1 (de) * | 1968-06-20 | 1972-03-30 | Siemens Ag | Duenne Halbleiter-Aufwachsschicht auf tonerdearmen,tiegelgezogenem Magnesium-Aluminium-Spinell-Einkristall,sowie Verfahren zur Herstellung der Schicht und zur Herstellung der Einkristalle |
US3660180A (en) * | 1969-02-27 | 1972-05-02 | Ibm | Constrainment of autodoping in epitaxial deposition |
US3658586A (en) | 1969-04-11 | 1972-04-25 | Rca Corp | Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals |
US3796597A (en) | 1970-11-02 | 1974-03-12 | Texas Instruments Inc | Method of producing semiconducting monocrystalline silicon on spinel substrates |
US4177321A (en) | 1972-07-25 | 1979-12-04 | Semiconductor Research Foundation | Single crystal of semiconductive material on crystal of insulating material |
US3883313A (en) * | 1972-12-14 | 1975-05-13 | Rca Corp | Modified czochralski-grown magnesium aluminate spinel and method of making same |
JPS5012970A (de) * | 1973-05-25 | 1975-02-10 | ||
JPS5117663A (en) * | 1974-08-02 | 1976-02-12 | Handotai Kenkyu Shinkokai | Handotaikibanyo supineruketsusho |
JPS5338968A (en) * | 1976-09-21 | 1978-04-10 | Handotai Kenkyu Shinkokai | Spinel crystal for semiconductor substrate |
FR2555157B1 (fr) * | 1983-11-22 | 1989-03-03 | France Etat | Nouveaux oxydes mixtes utilisables en particulier dans des lasers accordables |
US4790982A (en) * | 1986-04-07 | 1988-12-13 | Katalistiks International, Inc. | Metal-containing spinel composition and process of using same |
JPS62288197A (ja) * | 1986-06-05 | 1987-12-15 | Seiko Epson Corp | スピネルの製造方法 |
US5138298A (en) | 1989-11-02 | 1992-08-11 | Sanken Electric Co., Ltd. | Metallic oxide resistive bodies having a nonlinear volt-ampere characteristic and method of fabrication |
US5426083A (en) | 1994-06-01 | 1995-06-20 | Amoco Corporation | Absorbent and process for removing sulfur oxides from a gaseous mixture |
US5530267A (en) * | 1995-03-14 | 1996-06-25 | At&T Corp. | Article comprising heteroepitaxial III-V nitride semiconductor material on a substrate |
US5850410A (en) | 1995-03-16 | 1998-12-15 | Fujitsu Limited | Semiconductor laser and method for fabricating the same |
US5741724A (en) | 1996-12-27 | 1998-04-21 | Motorola | Method of growing gallium nitride on a spinel substrate |
FR2758915B1 (fr) | 1997-01-30 | 1999-03-05 | Commissariat Energie Atomique | Microlaser solide declenche passivement par absorbant saturable et son procede de fabrication |
US6104529A (en) * | 1999-03-08 | 2000-08-15 | Lucent Technologies Inc. | Optical fiber communication system employing wide band crystal alloy light generation devices |
US6839362B2 (en) * | 2001-05-22 | 2005-01-04 | Saint-Gobain Ceramics & Plastics, Inc. | Cobalt-doped saturable absorber Q-switches and laser systems |
JP3470712B2 (ja) * | 2001-09-10 | 2003-11-25 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
-
2002
- 2002-04-03 US US10/115,719 patent/US6844084B2/en not_active Expired - Lifetime
-
2003
- 2003-03-31 KR KR1020047015638A patent/KR100655106B1/ko not_active IP Right Cessation
- 2003-03-31 AT AT03728328T patent/ATE310715T1/de not_active IP Right Cessation
- 2003-03-31 AU AU2003233477A patent/AU2003233477A1/en not_active Abandoned
- 2003-03-31 JP JP2003582090A patent/JP4629341B2/ja not_active Expired - Fee Related
- 2003-03-31 CA CA002480117A patent/CA2480117C/en not_active Expired - Fee Related
- 2003-03-31 WO PCT/US2003/010147 patent/WO2003084886A1/en active IP Right Grant
- 2003-03-31 EP EP03728328A patent/EP1490307B1/de not_active Expired - Lifetime
- 2003-03-31 DE DE60302446T patent/DE60302446T2/de not_active Expired - Lifetime
- 2003-03-31 CN CNB038079054A patent/CN1323963C/zh not_active Expired - Fee Related
- 2003-04-01 TW TW092107359A patent/TWI303675B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2005521627A (ja) | 2005-07-21 |
US6844084B2 (en) | 2005-01-18 |
CN1646436A (zh) | 2005-07-27 |
KR100655106B1 (ko) | 2006-12-21 |
WO2003084886A1 (en) | 2003-10-16 |
TWI303675B (en) | 2008-12-01 |
JP4629341B2 (ja) | 2011-02-09 |
CA2480117C (en) | 2007-11-20 |
KR20040097261A (ko) | 2004-11-17 |
DE60302446D1 (de) | 2005-12-29 |
CA2480117A1 (en) | 2003-10-16 |
DE60302446T2 (de) | 2006-08-17 |
EP1490307A1 (de) | 2004-12-29 |
AU2003233477A1 (en) | 2003-10-20 |
TW200402484A (en) | 2004-02-16 |
CN1323963C (zh) | 2007-07-04 |
US20030188678A1 (en) | 2003-10-09 |
EP1490307B1 (de) | 2005-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |