ATE279035T1 - Leistunspulsanordnung mit hoher pulsrate und flüssigkeitskühlung - Google Patents

Leistunspulsanordnung mit hoher pulsrate und flüssigkeitskühlung

Info

Publication number
ATE279035T1
ATE279035T1 AT00975177T AT00975177T ATE279035T1 AT E279035 T1 ATE279035 T1 AT E279035T1 AT 00975177 T AT00975177 T AT 00975177T AT 00975177 T AT00975177 T AT 00975177T AT E279035 T1 ATE279035 T1 AT E279035T1
Authority
AT
Austria
Prior art keywords
pulse
charging
rate
charging capacitor
rates
Prior art date
Application number
AT00975177T
Other languages
English (en)
Inventor
Daniel L Birx
William N Partlo
Richard M Ness
Daniel A Rothweil
Paul C Melcher
Brett D Smith
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/370,739 external-priority patent/US6151346A/en
Application filed by Cymer Inc filed Critical Cymer Inc
Application granted granted Critical
Publication of ATE279035T1 publication Critical patent/ATE279035T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H01S3/0975—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser using inductive or capacitive excitation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/80—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using non-linear magnetic devices; using non-linear dielectric devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Lasers (AREA)
  • Generation Of Surge Voltage And Current (AREA)
  • Dc-Dc Converters (AREA)
  • Inverter Devices (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electrotherapy Devices (AREA)
  • Sampling And Sample Adjustment (AREA)
AT00975177T 1999-08-09 2000-07-25 Leistunspulsanordnung mit hoher pulsrate und flüssigkeitskühlung ATE279035T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/370,739 US6151346A (en) 1997-12-15 1999-08-09 High pulse rate pulse power system with fast rise time and low current
US09/470,288 US6240112B1 (en) 1997-12-15 1999-12-22 High pulse rate pulse power system with liquid cooling
PCT/US2000/020195 WO2001011732A1 (en) 1999-08-09 2000-07-25 High pulse rate pulse power system with liquid cooling

Publications (1)

Publication Number Publication Date
ATE279035T1 true ATE279035T1 (de) 2004-10-15

Family

ID=27005087

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00975177T ATE279035T1 (de) 1999-08-09 2000-07-25 Leistunspulsanordnung mit hoher pulsrate und flüssigkeitskühlung

Country Status (9)

Country Link
US (1) US6240112B1 (de)
EP (1) EP1203427B1 (de)
JP (1) JP3462168B2 (de)
KR (1) KR100585624B1 (de)
AT (1) ATE279035T1 (de)
AU (1) AU1326301A (de)
DE (1) DE60014664T2 (de)
TW (1) TW480792B (de)
WO (1) WO2001011732A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6757316B2 (en) * 1999-12-27 2004-06-29 Cymer, Inc. Four KHz gas discharge laser
US6618421B2 (en) * 1998-07-18 2003-09-09 Cymer, Inc. High repetition rate gas discharge laser with precise pulse timing control
US6477193B2 (en) * 1998-07-18 2002-11-05 Cymer, Inc. Extreme repetition rate gas discharge laser with improved blower motor
US6865210B2 (en) * 2001-05-03 2005-03-08 Cymer, Inc. Timing control for two-chamber gas discharge laser system
JP3296430B2 (ja) * 1999-10-08 2002-07-02 株式会社ウシオ総合技術研究所 露光用ＡｒＦエキシマレーザ装置
US6847671B1 (en) 2000-03-29 2005-01-25 Lambda Physik Ag Blower for gas laser
US6377595B1 (en) * 2000-09-08 2002-04-23 Komatsu Ltd. Peaking capacitor layout
US6839590B2 (en) 2001-10-22 2005-01-04 Medtronic Physio-Control Corp. Average current mode controlled energy storage in a defibrillator
JP3806025B2 (ja) * 2001-11-29 2006-08-09 株式会社小松製作所 ガスレーザ装置
DE10213593B4 (de) * 2002-03-26 2005-08-25 Tuilaser Ag Hochspannungspulstransformator
US7002443B2 (en) * 2003-06-25 2006-02-21 Cymer, Inc. Method and apparatus for cooling magnetic circuit elements
TWI231090B (en) * 2003-07-11 2005-04-11 Origin Electric Power supply for discharging
US7471708B2 (en) * 2005-03-31 2008-12-30 Cymer, Inc. Gas discharge laser output light beam parameter control
US20060222034A1 (en) 2005-03-31 2006-10-05 Cymer, Inc. 6 Khz and above gas discharge laser system
US8379687B2 (en) 2005-06-30 2013-02-19 Cymer, Inc. Gas discharge laser line narrowing module
US7706424B2 (en) * 2005-09-29 2010-04-27 Cymer, Inc. Gas discharge laser system electrodes and power supply for delivering electrical energy to same
US20070071047A1 (en) * 2005-09-29 2007-03-29 Cymer, Inc. 6K pulse repetition rate and above gas discharge laser system solid state pulse power system improvements
US7321607B2 (en) * 2005-11-01 2008-01-22 Cymer, Inc. External optics and chamber support system
CN101969275B (zh) * 2010-09-30 2012-11-07 南京工程学院 可编程纳秒双脉冲集成电源
CN102158074B (zh) * 2011-03-11 2013-05-08 北方通用电子集团有限公司 脉冲宽度转换电路结构
CN103023462B (zh) * 2012-12-13 2015-02-04 西安电子工程研究所 一种产生指数上升脉冲电流的发生器
WO2015198457A1 (ja) 2014-06-26 2015-12-30 ギガフォトン株式会社 ガスレーザ装置及びコンデンサ
CN106533397B (zh) * 2016-12-23 2023-06-02 中国工程物理研究院应用电子学研究所 一种两侧四端头式低感脉冲储能与成形模块
RU2684505C1 (ru) * 2018-04-16 2019-04-09 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Генератор высоковольтных импульсов для запуска управляемых вакуумных разрядников
CN109889078B (zh) * 2019-02-13 2024-03-19 襄阳九鼎昊天环保设备有限公司 一种静电除尘用高压双脉冲叠加电源
CN113770464B (zh) * 2021-09-08 2022-07-05 厦门理工学院 一种基于多模式自适应脉冲电源的多模式调整方法
CN115935679A (zh) * 2022-12-23 2023-04-07 华中科技大学 一种脉冲电源热管理系统设计方法及其装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177754A (en) * 1986-09-25 1993-01-05 The United States Of America As Represented By The United States Department Of Energy Magnetic compression laser driving circuit
US5982800A (en) * 1997-04-23 1999-11-09 Cymer, Inc. Narrow band excimer laser
WO1999031773A1 (en) * 1997-12-15 1999-06-24 Cymer, Inc. High pulse rate pulse power system

Also Published As

Publication number Publication date
EP1203427A1 (de) 2002-05-08
TW480792B (en) 2002-03-21
JP2001135879A (ja) 2001-05-18
US6240112B1 (en) 2001-05-29
EP1203427A4 (de) 2002-11-06
DE60014664T2 (de) 2006-02-23
AU1326301A (en) 2001-03-05
KR100585624B1 (ko) 2006-06-07
KR20020032545A (ko) 2002-05-03
WO2001011732A1 (en) 2001-02-15
JP3462168B2 (ja) 2003-11-05
DE60014664D1 (de) 2004-11-11
EP1203427B1 (de) 2004-10-06

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