ATE274609T1 - Verfahren und vorrichtung zur herstellung von binären oder mehrkomponentenverbindungen sowie daraus hergestellte vorrichtungen - Google Patents

Verfahren und vorrichtung zur herstellung von binären oder mehrkomponentenverbindungen sowie daraus hergestellte vorrichtungen

Info

Publication number
ATE274609T1
ATE274609T1 AT01938476T AT01938476T ATE274609T1 AT E274609 T1 ATE274609 T1 AT E274609T1 AT 01938476 T AT01938476 T AT 01938476T AT 01938476 T AT01938476 T AT 01938476T AT E274609 T1 ATE274609 T1 AT E274609T1
Authority
AT
Austria
Prior art keywords
gas
heat treatment
treatment
treatment region
chamber
Prior art date
Application number
AT01938476T
Other languages
English (en)
Inventor
Andrea Zappettini
Lucio Zanotti
Mingzheng Zha
Francesco Bissoli
Original Assignee
Pirelli & C Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pirelli & C Spa filed Critical Pirelli & C Spa
Application granted granted Critical
Publication of ATE274609T1 publication Critical patent/ATE274609T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Preparation Of Compounds By Using Micro-Organisms (AREA)
AT01938476T 2000-05-31 2001-05-30 Verfahren und vorrichtung zur herstellung von binären oder mehrkomponentenverbindungen sowie daraus hergestellte vorrichtungen ATE274609T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP00304621 2000-05-31
US20892400P 2000-06-05 2000-06-05
PCT/IB2001/000836 WO2001092608A2 (en) 2000-05-31 2001-05-30 Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same

Publications (1)

Publication Number Publication Date
ATE274609T1 true ATE274609T1 (de) 2004-09-15

Family

ID=56290146

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01938476T ATE274609T1 (de) 2000-05-31 2001-05-30 Verfahren und vorrichtung zur herstellung von binären oder mehrkomponentenverbindungen sowie daraus hergestellte vorrichtungen

Country Status (5)

Country Link
EP (1) EP1287186B1 (de)
AT (1) ATE274609T1 (de)
AU (1) AU2001264151A1 (de)
DE (1) DE60105145T2 (de)
WO (1) WO2001092608A2 (de)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190486A (en) * 1973-10-04 1980-02-26 Hughes Aircraft Company Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment
JPS6046079B2 (ja) * 1982-08-19 1985-10-14 横河電機株式会社 ＣｄＴｅ結晶の製造方法
JPH0751471B2 (ja) * 1986-06-05 1995-06-05 勝美 望月 化合物半導体単結晶の製造法

Also Published As

Publication number Publication date
DE60105145T2 (de) 2005-09-15
WO2001092608A3 (en) 2002-04-11
WO2001092608A2 (en) 2001-12-06
EP1287186B1 (de) 2004-08-25
AU2001264151A1 (en) 2001-12-11
EP1287186A2 (de) 2003-03-05
DE60105145D1 (de) 2004-09-30

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties