ATE267770T1 - Reaktor zur herstellung von hochreinem, granularem silizium - Google Patents

Reaktor zur herstellung von hochreinem, granularem silizium

Info

Publication number
ATE267770T1
ATE267770T1 AT01996511T AT01996511T ATE267770T1 AT E267770 T1 ATE267770 T1 AT E267770T1 AT 01996511 T AT01996511 T AT 01996511T AT 01996511 T AT01996511 T AT 01996511T AT E267770 T1 ATE267770 T1 AT E267770T1
Authority
AT
Austria
Prior art keywords
reactor
producing high
high pure
granular silicon
silicon
Prior art date
Application number
AT01996511T
Other languages
English (en)
Inventor
Theo Koenig
Matthias Pfaffelhuber
Heiko Herold
Guenter Holdenried
Leslaw Mleczko
Original Assignee
Solarworld Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarworld Ag filed Critical Solarworld Ag
Application granted granted Critical
Publication of ATE267770T1 publication Critical patent/ATE267770T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/0015—Controlling the temperature by thermal insulation means
    • B01J2219/00155—Controlling the temperature by thermal insulation means using insulating materials or refractories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0272—Graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0277—Metal based
    • B01J2219/029—Non-ferrous metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
AT01996511T 2000-11-20 2001-11-03 Reaktor zur herstellung von hochreinem, granularem silizium ATE267770T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10057481A DE10057481A1 (de) 2000-11-20 2000-11-20 Verfahren zur Herstellung von hochreinem, granularem Silizium
PCT/EP2001/012756 WO2002040400A1 (de) 2000-11-20 2001-11-03 Verfahren zur herstellung von hochreinem, granularem silizium

Publications (1)

Publication Number Publication Date
ATE267770T1 true ATE267770T1 (de) 2004-06-15

Family

ID=7663943

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01996511T ATE267770T1 (de) 2000-11-20 2001-11-03 Reaktor zur herstellung von hochreinem, granularem silizium

Country Status (6)

Country Link
US (1) US6849244B2 (de)
EP (1) EP1337463B1 (de)
AT (1) ATE267770T1 (de)
AU (1) AU2002221805A1 (de)
DE (2) DE10057481A1 (de)
WO (1) WO2002040400A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040173597A1 (en) * 2003-03-03 2004-09-09 Manoj Agrawal Apparatus for contacting gases at high temperature
DE102004010055A1 (de) * 2004-03-02 2005-09-22 Degussa Ag Verfahren zur Herstellung von Silicium
DE102004038718A1 (de) * 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Reaktor sowie Verfahren zur Herstellung von Silizium
US8278456B2 (en) * 2008-06-20 2012-10-02 University Of Georgia Research Foundation, Inc. Synthesis and stabilization of neutral compounds with homonuclear bonds
DE102008036143A1 (de) 2008-08-01 2010-02-04 Berlinsolar Gmbh Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium
CN103787336B (zh) 2008-09-16 2016-09-14 储晞 生产高纯颗粒硅的方法
DE102008059408A1 (de) 2008-11-27 2010-06-02 Schmid Silicon Technology Gmbh Verfahren und Vorrichtungen zur Herstellung von Reinstsilizium
US8168123B2 (en) * 2009-02-26 2012-05-01 Siliken Chemicals, S.L. Fluidized bed reactor for production of high purity silicon
WO2010123873A1 (en) 2009-04-20 2010-10-28 Ae Polysilicon Corporation A reactor with silicide-coated metal surfaces
WO2010123869A1 (en) * 2009-04-20 2010-10-28 Ae Polysilicon Corporation Methods and system for cooling a reaction effluent gas
DE102009056437B4 (de) 2009-12-02 2013-06-27 Spawnt Private S.À.R.L. Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen
US20120100061A1 (en) 2010-10-22 2012-04-26 Memc Electronic Materials, Inc. Production of Polycrystalline Silicon in Substantially Closed-loop Processes
US8449848B2 (en) 2010-10-22 2013-05-28 Memc Electronic Materials, Inc. Production of polycrystalline silicon in substantially closed-loop systems
US9156705B2 (en) 2010-12-23 2015-10-13 Sunedison, Inc. Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor
US8849584B2 (en) 2010-12-29 2014-09-30 Sunedison, Inc. Systems and methods for particle size determination and control in a fluidized bed reactor for use with thermally decomposable silicon-containing gas
US8452547B2 (en) 2010-12-29 2013-05-28 Memc Electronic Materials, Inc. Systems and methods for particle size determination and control in a fluidized bed reactor
CN107253723B (zh) 2011-09-30 2020-06-26 各星有限公司 通过使硅烷在流化床反应器中热分解而制备多晶硅
WO2013049325A1 (en) 2011-09-30 2013-04-04 Memc Electronic Materials, Inc. Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor
US8875728B2 (en) 2012-07-12 2014-11-04 Siliken Chemicals, S.L. Cooled gas distribution plate, thermal bridge breaking system, and related methods
DE102014212049A1 (de) 2014-06-24 2015-12-24 Wacker Chemie Ag Wirbelschichtreaktor und Verfahren zur Herstellung von polykristallinem Siliciumgranulat
EP3672910B1 (de) 2017-08-23 2021-07-21 Wacker Chemie AG Wirbelschichtreaktor zur herstellung von polykristallinem siliciumgranulat

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3012861A (en) * 1960-01-15 1961-12-12 Du Pont Production of silicon
US5045398A (en) 1982-06-22 1991-09-03 Harry Levin Silicon carbide product
US5264183A (en) * 1984-12-14 1993-11-23 Monsanto Company Method and apparatus for carrying out catalyzed chemical reactions and for studying catalysis
US5906799A (en) * 1992-06-01 1999-05-25 Hemlock Semiconductor Corporation Chlorosilane and hydrogen reactor
US5954859A (en) * 1997-11-18 1999-09-21 Praxair Technology, Inc. Solid electrolyte ionic conductor oxygen production with power generation

Also Published As

Publication number Publication date
US20040047795A1 (en) 2004-03-11
DE10057481A1 (de) 2002-05-23
EP1337463B1 (de) 2004-05-26
DE50102439D1 (de) 2004-07-01
EP1337463A1 (de) 2003-08-27
WO2002040400A1 (de) 2002-05-23
AU2002221805A1 (en) 2002-05-27
US6849244B2 (en) 2005-02-01

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Legal Events

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REN Ceased due to non-payment of the annual fee