ATA1090170A - METHOD OF MANUFACTURING A PLANAR TRANSISTOR - Google Patents
METHOD OF MANUFACTURING A PLANAR TRANSISTORInfo
- Publication number
- ATA1090170A ATA1090170A AT1090170A AT1090170A ATA1090170A AT A1090170 A ATA1090170 A AT A1090170A AT 1090170 A AT1090170 A AT 1090170A AT 1090170 A AT1090170 A AT 1090170A AT A1090170 A ATA1090170 A AT A1090170A
- Authority
- AT
- Austria
- Prior art keywords
- manufacturing
- planar transistor
- planar
- transistor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691961247 DE1961247A1 (en) | 1969-12-05 | 1969-12-05 | Semiconductor component and method for its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
ATA1090170A true ATA1090170A (en) | 1975-04-15 |
Family
ID=5753171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT1090170A ATA1090170A (en) | 1969-12-05 | 1970-12-03 | METHOD OF MANUFACTURING A PLANAR TRANSISTOR |
Country Status (7)
Country | Link |
---|---|
AT (1) | ATA1090170A (en) |
CH (1) | CH515619A (en) |
DE (1) | DE1961247A1 (en) |
FR (1) | FR2070742B1 (en) |
GB (1) | GB1318979A (en) |
NL (1) | NL7017770A (en) |
SE (1) | SE369355B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2834719A1 (en) * | 1978-08-08 | 1980-02-14 | Siemens Ag | SEMICONDUCTOR DEVICE WITH MULTIPLE SEMICONDUCTOR ELEMENTS WITH PN TRANSITIONS UNITED IN A SEMICONDUCTOR CRYSTAL AND FORMING AN INTEGRATED CIRCUIT |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1539043A (en) * | 1967-06-30 | 1968-09-13 | Radiotechnique Coprim Rtc | Integrated circuit comprising a transistor and its manufacturing process |
-
1969
- 1969-12-05 DE DE19691961247 patent/DE1961247A1/en active Pending
-
1970
- 1970-12-01 CH CH1774870A patent/CH515619A/en not_active IP Right Cessation
- 1970-12-03 AT AT1090170A patent/ATA1090170A/en not_active Application Discontinuation
- 1970-12-03 FR FR7043479A patent/FR2070742B1/fr not_active Expired
- 1970-12-04 NL NL7017770A patent/NL7017770A/xx unknown
- 1970-12-04 GB GB5766970A patent/GB1318979A/en not_active Expired
- 1970-12-07 SE SE1654070A patent/SE369355B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL7017770A (en) | 1971-06-08 |
DE1961247A1 (en) | 1971-06-16 |
FR2070742B1 (en) | 1974-10-31 |
FR2070742A1 (en) | 1971-09-17 |
GB1318979A (en) | 1973-05-31 |
SE369355B (en) | 1974-08-19 |
CH515619A (en) | 1971-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1AW | Revocation of published examined application |